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Mohapatra D, Kang HJ, Lee S, Son Y, Ansari MZ, Kang Y, Lee JW, Kim SH. Ultrahigh Sensitivity for Thermographic Human-Machine Interface via Precious Metals Atomic Layer Deposition on V-MXene: Computational and Experimental Exploration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402003. [PMID: 38884191 DOI: 10.1002/smll.202402003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Revised: 04/04/2024] [Indexed: 06/18/2024]
Abstract
Global healthcare based on the Internet of Things system is rapidly transforming to measure precise physiological body parameters without visiting hospitals at remote patients and associated symptoms monitoring. 2D materials and the prevailing mood of current ever-expanding MXene-based sensing devices motivate to introduce first the novel iridium (Ir) precious metal incorporated vanadium (V)-MXene via industrially favored emerging atomic layer deposition (ALD) techniques. The current work contributes a precise control and delicate balance of Ir single atomic forms or clusters on the V-MXene to constitute a unique precious metal-MXene embedded heterostructure (Ir-ALD@V-MXene) in practical real-time sensing healthcare applications to thermography with human-machine interface for the first time. Ir-ALD@V-MXene delivers an ultrahigh durability and sensing performance of 2.4% °C-1 than pristine V-MXene (0.42% °C-1), outperforming several conventionally used MXenes, graphene, underscoring the importance of the Ir-ALD innovative process. Aberration-corrected advanced ultra-high-resolution transmission/scanning transmission electron microscopy confirms the presence of Ir atomic clusters on well-aligned 2D-layered V-MXene structure and their advanced heterostructure formation (Ir-ALD@V-MXene), enhanced sensing mechanism is investigated using density functional theory (DFT) computations. A rational design empowering the Ir-ALD process on least explored V-MXene can potentially unfold further precious metals ALD-process developments for next-generation wearable personal healthcare devices.
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Affiliation(s)
- Debananda Mohapatra
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Hyun Jin Kang
- Department of Materials Science and Engineering, Pusan National University, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sanghyuk Lee
- Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Yeseul Son
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Mohd Zahid Ansari
- Chemical Engineering Program, Texas A&M University at Qatar, Doha, 23874, Qatar
| | - Youngho Kang
- Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Jung Woo Lee
- Department of Materials Science and Engineering, Pusan National University, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Soo-Hyun Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan, 44919, Republic of Korea
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Mijit A, Li S, Wang Q, Li M, Tai Y. Silver Nanowire-Based Flexible Strain Sensor for Human Motion Detection. SENSORS (BASEL, SWITZERLAND) 2024; 24:3329. [PMID: 38894120 PMCID: PMC11174821 DOI: 10.3390/s24113329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2024] [Revised: 05/16/2024] [Accepted: 05/16/2024] [Indexed: 06/21/2024]
Abstract
Accurately capturing human movements is a crucial element of health status monitoring and a necessary precondition for realizing future virtual reality/augmented reality applications. Flexible motion sensors with exceptional sensitivity are capable of detecting physical activities by converting them into resistance fluctuations. Silver nanowires (AgNWs) have become a preferred choice for the development of various types of sensors due to their outstanding electrical conductivity, transparency, and flexibility within polymer composites. Herein, we present the design and fabrication of a flexible strain sensor based on silver nanowires. Suitable substrate materials were selected, and the sensor's sensitivity and fatigue properties were characterized and tested, with the sensor maintaining reliability after 5000 deformation cycles. Different sensors were prepared by controlling the concentration of silver nanowires to achieve the collection of motion signals from various parts of the human body. Additionally, we explored potential applications of these sensors in fields such as health monitoring and virtual reality. In summary, this work integrated the acquisition of different human motion signals, demonstrating great potential for future multifunctional wearable electronic devices.
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Affiliation(s)
- Abduweli Mijit
- School of Material Science and Technology, Jiangxi University of Science and Technology, Ganzhou 341000, China;
- Key Laboratory of Human-Machine Intelligence-Synergy Systems of Chinese Academy of Sciences (CAS), Shenzhen Institutes of Advanced Technology, CAS, Shenzhen 518055, China; (S.L.); (Q.W.)
| | - Shuo Li
- Key Laboratory of Human-Machine Intelligence-Synergy Systems of Chinese Academy of Sciences (CAS), Shenzhen Institutes of Advanced Technology, CAS, Shenzhen 518055, China; (S.L.); (Q.W.)
| | - Qiang Wang
- Key Laboratory of Human-Machine Intelligence-Synergy Systems of Chinese Academy of Sciences (CAS), Shenzhen Institutes of Advanced Technology, CAS, Shenzhen 518055, China; (S.L.); (Q.W.)
| | - Mingzhou Li
- School of Metallurgical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China
| | - Yanlong Tai
- Key Laboratory of Human-Machine Intelligence-Synergy Systems of Chinese Academy of Sciences (CAS), Shenzhen Institutes of Advanced Technology, CAS, Shenzhen 518055, China; (S.L.); (Q.W.)
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3
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Mandia AK, Kumar R, Lee SC, Bhattacharjee S, Muralidharan B. Magneto-transport in the monolayer MoS 2material system for high-performance field-effect transistor applications. NANOTECHNOLOGY 2024; 35:305706. [PMID: 38631306 DOI: 10.1088/1361-6528/ad3fc2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 04/17/2024] [Indexed: 04/19/2024]
Abstract
Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities, and magnetic fields.
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Affiliation(s)
- Anup Kumar Mandia
- Indo-Korea Science and Technology Center (IKST), Jakkur, Bengaluru 560065, India
| | - Rohit Kumar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
| | - Seung-Cheol Lee
- Electronic Materials Research Center, KIST, Seoul 136-791, Republic of Korea
| | | | - Bhaskaran Muralidharan
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
- Centre of Excellence in Quantum Information, Computation, Science and Technology, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
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4
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Polumati G, Kolli CSR, Flores M, Kumar A, Sanghvi A, Bugallo ADL, Sahatiya P. Mixed-Dimensional van der Waals Heterostructure (2D ReS 2/0D MoS 2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19261-19270. [PMID: 38588397 DOI: 10.1021/acsami.4c02295] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.
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Affiliation(s)
- Gowtham Polumati
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Chandra Sekhar Reddy Kolli
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Mario Flores
- Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro, Qro CP 76000, México
| | - Aayush Kumar
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Aarnav Sanghvi
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
| | - Andres De Luna Bugallo
- Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro, Qro CP 76000, México
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India
- Materials Center for Sustainable Energy & Environment, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad 500078, India
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Liu B, Yue X, Sheng C, Chen J, Tang C, Shan Y, Han J, Shen S, Wu W, Li L, Lu Y, Hu L, Liu R, Qiu ZJ, Cong C. High-Performance Contact-Doped WSe 2 Transistors Using TaSe 2 Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19247-19253. [PMID: 38591143 DOI: 10.1021/acsami.4c01605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
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Affiliation(s)
- Bingjie Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Xiaofei Yue
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chenxu Sheng
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jiajun Chen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chengjie Tang
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yabing Shan
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jinkun Han
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shuwen Shen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wenxuan Wu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Lijia Li
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ye Lu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Laigui Hu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ran Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhi-Jun Qiu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chunxiao Cong
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, China
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6
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Zou Y, Li P, Su C, Yan J, Zhao H, Zhang Z, You Z. Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates. ACS NANO 2024; 18:9627-9635. [PMID: 38489156 DOI: 10.1021/acsnano.3c13220] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/17/2024]
Abstract
High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS2 cannot survive at high temperature and drastically degrades above 200 °C. Here, we report MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes. With the protection of the h-BN/h-BN structure, the devices can survive at much higher temperature (≥500 °C in air) than those of the MoS2 devices ever reported, which provides us an opportunity to explore the electrical properties and working mechanism of MoS2 devices at high temperature. Unlike the relatively low-temperature situation, the on/off ratio and subthreshold swing of MoS2 FETs show drastic variation at elevated temperature due to the injection of thermal emission carriers. Compared with metal electrode, devices with a graphene electrode demonstrate superior performance at high temperature (∼1-order-larger current on/off ratio, 3-7 times smaller subthreshold swing, and 5-9 times smaller threshold voltage shift). We further realize that the flexible CMOS NOT gate based on the above technique, and demonstrate logic computing at 550 °C. This work may stimulate the fundamental research of properties of 2D materials at high temperature, and also creates conditions for next-generation flexible harsh-environment-resistant integrated circuits.
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Affiliation(s)
- Yixuan Zou
- Department of Precision Instruments, Tsinghua University, Beijing 100084, China
| | - Peng Li
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Caizhen Su
- Beijing Information Science & Technology University, Beijing 100192, China
| | - Jiawen Yan
- Department of Precision Instruments, Tsinghua University, Beijing 100084, China
| | - Haojie Zhao
- Department of Precision Instruments, Tsinghua University, Beijing 100084, China
| | - Zekun Zhang
- Department of Precision Instruments, Tsinghua University, Beijing 100084, China
| | - Zheng You
- Department of Precision Instruments, Tsinghua University, Beijing 100084, China
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7
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K N, A P S. Unveiling the Radiative Electron-Hole Recombination of MoS 2 Nanostructures at Extreme pH Conditions. J Fluoresc 2024:10.1007/s10895-024-03616-w. [PMID: 38381234 DOI: 10.1007/s10895-024-03616-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Accepted: 02/12/2024] [Indexed: 02/22/2024]
Abstract
Nanostructures of MoS2 are in wide research for optoelectronic, energy and biological applications. Opto-electronic and biological applications requires the tuning of photoluminescence properties of MoS2 nanostructures. In this article, nanosized MoS2 is hydrothermally synthesized, and photoluminescence at extreme pH conditions (pH 1 and 13) is examined. As the photoluminescence gives a key to probe the radiative electron-hole recombination, here, photoluminescence emissions are used as an indicator to suggest the pattern of electron-hole recombination in the material at extreme pH conditions. Raman spectroscopy, dynamic light scattering, Scanning electron microscopic image and energy dispersive x-ray analysis are done for material confirmation. At pH 1 and 13 as-synthesized nanostructured MoS2 exhibited both upconversion and downconversion photoluminescence. The intensity of photoluminescence is varied with respect to pH. Excitation-dependent photoluminescence mechanisms and preliminary understanding on the ratio of quantum yields and life span of excited state of as-synthesized nanostructured MoS2 are unveiled here.
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Affiliation(s)
- Nayana K
- Department of Physics, Government Victoria College, Affiliated to University of Calicut, Palakkad, 678001, Kerala, India
- Department of Physics, N. S. S. College, Affiliated to University of Calicut, Ottapalam, Palakkad, 679103, Kerala, India
| | - Sunitha A P
- Department of Physics, Government Victoria College, Affiliated to University of Calicut, Palakkad, 678001, Kerala, India.
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8
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Rodríguez González MC, Ibarburu IM, Rebanal C, Sulleiro MV, Sasikumar R, Naranjo A, Ayani CG, Garnica M, Calleja F, Pérez EM, Vázquez de Parga AL, De Feyter S. Clicking beyond suspensions: understanding thiol-ene chemistry on solid-supported MoS 2. NANOSCALE 2024; 16:3749-3754. [PMID: 38298095 DOI: 10.1039/d3nr05236b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Molecular functionalization of MoS2 has attracted a lot of attention due to its potential to afford fine-tuned hybrid materials that benefit from the power of synthetic chemistry and molecular design. Here, we report on the on-surface reaction of maleimides on bulk and molecular beam epitaxy grown single-layer MoS2, both in ambient conditions as well as ultrahigh vacuum using scanning probe microscopy.
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Affiliation(s)
- Miriam C Rodríguez González
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
- Área de Química Física, Departamento de Química, Instituto de Materiales y Nanotecnología (IMN), Universidad de La Laguna (ULL), 38200 La Laguna, Spain
| | - Iván M Ibarburu
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | - Clara Rebanal
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | | | - Rahul Sasikumar
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
| | | | - Cosme G Ayani
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
| | | | | | | | - Amadeo L Vázquez de Parga
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.
- IMDEA Nanociencia, Faraday 9, 28049 Madrid, Spain.
- IFIMAC, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain
| | - Steven De Feyter
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.
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9
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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10
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Bobbitt NS, Curry JF, Babuska TF, Chandross M. Water adsorption on MoS 2 under realistic atmosphere conditions and impacts on tribology. RSC Adv 2024; 14:4717-4729. [PMID: 38318617 PMCID: PMC10843291 DOI: 10.1039/d3ra07984h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 01/05/2024] [Indexed: 02/07/2024] Open
Abstract
Molybdenum disulfide (MoS2) is a 2D material widely used as a dry lubricant. However, exposure to water and oxygen is known to reduce its effectiveness, and therefore an understanding of the uptake of water is important information for mitigating these effects. Here we use grand canonical Monte Carlo simulations to rigorously study water adsorption on MoS2 surfaces and edges with different concentrations of defects under realistic atmospheric conditions (i.e. various temperatures and humidity levels). We find that the amount of water adsorbed depends strongly on the number of defects. Simulations indicate that defect sites are generally saturated with water even at low ppm levels of humidity. Water binds strongly to S vacancies on interlamellar surfaces, but generally only one water molecule can fit on each of these sites. Defects on surfaces or edges of lamellae also strongly attract water molecules that then nucleate small clusters of water bonded via hydrogen bonding. We demonstrate that water preferentially binds to surface defects, but once those are saturated at a critical humidity level of about 500-1000 ppm water, water binds to edge sites where it negatively impacts the tribological performance of MoS2.
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Affiliation(s)
- N Scott Bobbitt
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratories Albuquerque New Mexico 87123 USA
| | - John F Curry
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratories Albuquerque New Mexico 87123 USA
| | - Tomas F Babuska
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratories Albuquerque New Mexico 87123 USA
| | - Michael Chandross
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratories Albuquerque New Mexico 87123 USA
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11
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Walsh CP, Malizia JP, Sutton SC, Papanikolas JM, Cahoon JF. Monolayer-like Exciton Recombination Dynamics of Multilayer MoSe 2 Observed by Pump-Probe Microscopy. NANO LETTERS 2024; 24:1431-1438. [PMID: 38252694 DOI: 10.1021/acs.nanolett.3c04754] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton-exciton annihilation (EEA) and Shockley-Read-Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2.
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Affiliation(s)
- Cullen P Walsh
- Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - Jason P Malizia
- Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - Sarah C Sutton
- Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - John M Papanikolas
- Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - James F Cahoon
- Department of Chemistry, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
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12
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Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Interface Properties of MoS 2 van der Waals Heterojunctions with GaN. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:133. [PMID: 38251098 PMCID: PMC10818867 DOI: 10.3390/nano14020133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/27/2023] [Accepted: 01/03/2024] [Indexed: 01/23/2024]
Abstract
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.
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Affiliation(s)
- Salvatore Ethan Panasci
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Ioannis Deretzis
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Emanuela Schilirò
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antonino La Magna
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Fabrizio Roccaforte
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Miklos Nemeth
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
| | - Simonpietro Agnello
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
- ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy
| | - Filippo Giannazzo
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
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13
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Yang M, Ye Z, Ren Y, Farhat M, Chen PY. Materials, Designs, and Implementations of Wearable Antennas and Circuits for Biomedical Applications: A Review. MICROMACHINES 2023; 15:26. [PMID: 38258145 PMCID: PMC10819388 DOI: 10.3390/mi15010026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 12/11/2023] [Accepted: 12/21/2023] [Indexed: 01/24/2024]
Abstract
The intersection of biomedicine and radio frequency (RF) engineering has fundamentally transformed self-health monitoring by leveraging soft and wearable electronic devices. This paradigm shift presents a critical challenge, requiring these devices and systems to possess exceptional flexibility, biocompatibility, and functionality. To meet these requirements, traditional electronic systems, such as sensors and antennas made from rigid and bulky materials, must be adapted through material science and schematic design. Notably, in recent years, extensive research efforts have focused on this field, and this review article will concentrate on recent advancements. We will explore the traditional/emerging materials for highly flexible and electrically efficient wearable electronics, followed by systematic designs for improved functionality and performance. Additionally, we will briefly overview several remarkable applications of wearable electronics in biomedical sensing. Finally, we provide an outlook on potential future directions in this developing area.
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Affiliation(s)
- Minye Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
- Department of Electrical and Computer Engineering, University of Illinois Chicago, Chicago, IL 60607, USA; (Z.Y.); (Y.R.); (P.-Y.C.)
| | - Zhilu Ye
- Department of Electrical and Computer Engineering, University of Illinois Chicago, Chicago, IL 60607, USA; (Z.Y.); (Y.R.); (P.-Y.C.)
- State Key Laboratory for Manufacturing Systems Engineering, The Key Laboratory of Biomedical Information Engineering of Ministry of Education, Center for Mitochondrial Biology and Medicine, School of Life Science and Technology, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Key Laboratory for Biomedical Testing and High-end Equipment, Xi’an Jiaotong University, Xi’an 710049, China
| | - Yichong Ren
- Department of Electrical and Computer Engineering, University of Illinois Chicago, Chicago, IL 60607, USA; (Z.Y.); (Y.R.); (P.-Y.C.)
| | - Mohamed Farhat
- Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;
| | - Pai-Yen Chen
- Department of Electrical and Computer Engineering, University of Illinois Chicago, Chicago, IL 60607, USA; (Z.Y.); (Y.R.); (P.-Y.C.)
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14
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Krajewska AM, Paiva AE, Morris M, McDonald AR. Synthesis, Characterisation, and Functionalisation of Charged Two-Dimensional MoS 2. Chemistry 2023; 29:e202302039. [PMID: 37534612 DOI: 10.1002/chem.202302039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 07/18/2023] [Accepted: 07/19/2023] [Indexed: 08/04/2023]
Abstract
The applications of exfoliated MoS2 are limited by its inert surface and poor interface. We have activated the surface of exfoliated 2H-MoS2 by reacting it with NaBH4 , forming an n-doped material as demonstrated by a negative zeta-potential value ζ=-25 mV and a 20 nm (0.05 eV) red-shift in its photoluminescence spectrum. The novel material's spectral properties were consistent with pristine 2H-MoS2 (as determined by HR-TEM, XPS, pXRD, DRIFT, TGA, and Raman spectroscopy). Importantly, it was readily dispersed in H2 O unlike 2H-MoS2 . Its dispersibility properties were explored for a variety of solvents and could be directly correlated with the relative permittivity of the respective solvents. The charged 2H-MoS2 reacted readily with an organo-iodide to deliver functionalized 2H-MoS2 . Our approach delivers aqueous dispersions of semiconducting 2H-MoS2 , without additives or chemical functionalities, and allows for controlled and facile functionalization of 2H-MoS2 opening multiple new avenues of semi-conducting MoS2 application.
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Affiliation(s)
- Aleksandra M Krajewska
- CRANN/AMBER Nanoscience Institute and School of Chemistry, Trinity College Dublin, The University of Dublin, College Green, Dublin 2, Ireland
| | - Aislan Esmeraldo Paiva
- CRANN/AMBER Nanoscience Institute and School of Chemistry, Trinity College Dublin, The University of Dublin, College Green, Dublin 2, Ireland
| | - Michael Morris
- CRANN/AMBER Nanoscience Institute and School of Chemistry, Trinity College Dublin, The University of Dublin, College Green, Dublin 2, Ireland
| | - Aidan R McDonald
- CRANN/AMBER Nanoscience Institute and School of Chemistry, Trinity College Dublin, The University of Dublin, College Green, Dublin 2, Ireland
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15
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Aftab S, Hussain S, Al-Kahtani AA. Latest Innovations in 2D Flexible Nanoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301280. [PMID: 37104492 DOI: 10.1002/adma.202301280] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia
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16
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Liu C, Hongo K, Maezono R, Zhang J, Oshima Y. Stiffer Bonding of Armchair Edge in Single-Layer Molybdenum Disulfide Nanoribbons. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303477. [PMID: 37697633 PMCID: PMC10602518 DOI: 10.1002/advs.202303477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 08/02/2023] [Indexed: 09/13/2023]
Abstract
The physical and chemical properties of nanoribbon edges are important for characterizing nanoribbons and applying them in electronic devices, sensors, and catalysts. The mechanical response of molybdenum disulfide nanoribbons, which is an important issue for their application in thin resonators, is expected to be affected by the edge structure, albeit this result is not yet being reported. In this work, the width-dependent Young's modulus is precisely measured in single-layer molybdenum disulfide nanoribbons with armchair edges using the developed nanomechanical measurement based on a transmission electron microscope. The Young's modulus remains constant at ≈166 GPa above 3 nm width, but is inversely proportional to the width below 3 nm, suggesting a higher bond stiffness for the armchair edges. Supporting the experimental results, the density functional theory calculations show that buckling causes electron transfer from the Mo atoms at the edges to the S atoms on both sides to increase the Coulomb attraction.
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Affiliation(s)
- Chunmeng Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Educationand School of Physics & MicroelectronicsZhengzhou UniversityZhengzhou450052China
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
- Center of Advanced Analysis & Gene SequencingZhengzhou UniversityZhengzhou450001China
| | - Kenta Hongo
- Research Center for Advanced Computing InfrastructureJapan Advanced Institute of Science and TechnologyNomiIshikawa923‐1292Japan
| | - Ryo Maezono
- School of Information ScienceJapan Advanced Institute of Science and TechnologyNomiIshikawa923‐1292Japan
| | - Jiaqi Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Educationand School of Physics & MicroelectronicsZhengzhou UniversityZhengzhou450052China
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
- Institute of Quantum Materials and PhysicsHenan Academy of SciencesZhengzhou450046China
| | - Yoshifumi Oshima
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
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17
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Singh A, Jain M, Bhumla P, Bhattacharya S. Electrocatalytic study of the hydrogen evolution reaction on MoS 2/BP and MoSSe/BP in acidic media. NANOSCALE ADVANCES 2023; 5:5332-5339. [PMID: 37767041 PMCID: PMC10521249 DOI: 10.1039/d3na00215b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 08/22/2023] [Indexed: 09/29/2023]
Abstract
Molecular hydrogen (H2) production by the electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious metal-based electrocatalysts that are earth-abundant and low cost like MoS2. Although it is acid-stable, its applicability is limited by catalytically inactive basal planes, poor electrical transport and inefficient charge transfer at the interface. Therefore, the present work examines its bilayer van der Waals heterostructure (vdW HTS). The second constituent monolayer boron phosphide (BP) is advantageous as an electrode material owing to its chemical stability in both oxygen and water environments. Here, we have performed first-principles based calculations under the framework of density functional theory (DFT) for the HER in an electrochemical double layer model with the BP monolayer, MoS2/BP and MoSSe/BP vdW HTSs. The climbing image nudged elastic band method (CI-NEB) has been employed to determine the minimum energy pathways for Tafel and Heyrovsky reactions. The calculations reveal that the Tafel reaction shows no reaction barrier. Thereafter, for the Heyrovsky reaction, we obtained a low reaction barrier in the vdW HTSs as compared to that in the BP monolayer. Subsequently, we have observed no significant difference in the reaction profile of MoS2/BP and MoSSe/BP vdW HTSs in the case of 2 × 2 supercell configuration. However, in the case of 3 × 3 and 4 × 4 configurations, MoSSe/BP shows a feasible Heyrovsky reaction with no reaction barrier. The coverages with 1/4H+ concentration (conc.) deduced high coverage with low conc. and low coverage with high conc. to be apt for the HER via the Heyrovsky reaction path. Finally, on observing the activation barrier of the Heyrovsky pathway along with that of second H adsorption at the surface, the Heyrovsky path is expected to be favoured.
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Affiliation(s)
- Arunima Singh
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Manjari Jain
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Preeti Bhumla
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
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18
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Rangnekar SV, Sangwan VK, Jin M, Khalaj M, Szydłowska BM, Dasgupta A, Kuo L, Kurtz HE, Marks TJ, Hersam MC. Electroluminescence from Megasonically Solution-Processed MoS 2 Nanosheet Films. ACS NANO 2023; 17:17516-17526. [PMID: 37606956 DOI: 10.1021/acsnano.3c06034] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.
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Affiliation(s)
- Sonal V Rangnekar
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mengru Jin
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Maryam Khalaj
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Beata M Szydłowska
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Anushka Dasgupta
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lidia Kuo
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Heather E Kurtz
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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19
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Sojková M, Píš I, Hrdá J, Vojteková T, Pribusová Slušná L, Vegso K, Siffalovic P, Nadazdy P, Dobročka E, Krbal M, Fons PJ, Munnik F, Magnano E, Hulman M, Bondino F. Lithium-Induced Reorientation of Few-Layer MoS 2 Films. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:6246-6257. [PMID: 37637012 PMCID: PMC10448679 DOI: 10.1021/acs.chemmater.3c00669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 07/18/2023] [Indexed: 08/29/2023]
Abstract
Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.
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Affiliation(s)
- Michaela Sojková
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Igor Píš
- IOM-CNR,
Istituto Officina dei Materiali, S.S. 14 km − 163.5, Basovizza, Trieste 34149, Italy
| | - Jana Hrdá
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Tatiana Vojteková
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Lenka Pribusová Slušná
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Karol Vegso
- Institute
of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 84511 Bratislava, Slovakia
- Centre
for Advanced Materials Application (CEMEA), Slovak Academy of Sciences, Dúbravská cesta 5807/9, 84511 Bratislava, Slovakia
| | - Peter Siffalovic
- Institute
of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 84511 Bratislava, Slovakia
- Centre
for Advanced Materials Application (CEMEA), Slovak Academy of Sciences, Dúbravská cesta 5807/9, 84511 Bratislava, Slovakia
| | - Peter Nadazdy
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Edmund Dobročka
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Miloš Krbal
- Center
of Materials and Nanotechnologies (CEMNAT), Faculty of Chemical Technology, University of Pardubice, Legions Square 565, 530 02 Pardubice, Czech Republic
| | - Paul J. Fons
- Department
of Electronics and Electrical Engineering, Faculty of Science and
Technology, Keio University, 223-8522 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan
- Device
Technology Research Institute, National Institute of Advanced Industrial
Science and Technology, 1-1-1 Umezono, Tsukuba, 305-8568 Ibaraki, Japan
| | - Frans Munnik
- Helmholtz-Zentrum
Dresden-Rossendorf, e.V. Bautzner Landstrasse 400, D-01328 Dresden, Germany
| | - Elena Magnano
- IOM-CNR,
Istituto Officina dei Materiali, S.S. 14 km − 163.5, Basovizza, Trieste 34149, Italy
- Department
of Physics, University of Johannesburg, Auckland Park, PO Box 524, 2006 Johannesburg, South Africa
| | - Martin Hulman
- Institute
of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
| | - Federica Bondino
- IOM-CNR,
Istituto Officina dei Materiali, S.S. 14 km − 163.5, Basovizza, Trieste 34149, Italy
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20
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Mallik SK, Padhan R, Sahu MC, Roy S, Pradhan GK, Sahoo PK, Dash SP, Sahoo S. Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS 2 for Brain-Inspired Artificial Learning. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37467425 DOI: 10.1021/acsami.3c06336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities toward developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 memtransistors, which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multilevel memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single Field Effect Transistor (FET) device where thermal energy can be ventured to aid the memory functions with multilevel (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way toward reliable data processing and storage using 2D semiconductors with high-packing density arrays for brain-inspired artificial learning.
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Affiliation(s)
- Sameer Kumar Mallik
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Roshan Padhan
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Mousam Charan Sahu
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Suman Roy
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar 751024, Odisha, India
| | - Prasana Kumar Sahoo
- Materials Science Centre, Quantum Materials and Device Research Laboratory, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India
| | - Saroj Prasad Dash
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
| | - Satyaprakash Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
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21
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Pan J, Zhou X, Gong H, Lin Z, Xiang H, Liu X, Chen X, Li H, Liu T, Liu S. Covalently Functionalized MoS 2 Initiated Gelation of Hydrogels for Flexible Strain Sensing. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37466084 DOI: 10.1021/acsami.3c03234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Transition metal dichalcogenides (TMDs), with superior mechanical and electrical conductivity, are one of the most promising two-dimensional materials for creating a generation of intelligent and flexible electronic devices. However, due to the high van der Waals and electrostatic attraction, TMD nanomaterials tend to aggregate in dispersants to achieve a stable state, thus severely limiting their further applications. Surface chemical modification is a common strategy for improving the dispersity of TMD nanomaterials; however, there are still constraints such as limited functionalization methods, low grafting rate, and difficult practice application. Thus, it is challenging to develop innovative surface modification systems. Herein, we covalently modify an olefin molecule on surface-inert MoS2, and the modified MoS2 can be used as not only a catalyst for hydrogel polymerization, but also a cross-linker in the hydrogel network. Specifically, allyl is covalently grafted onto chemically exfoliated MoS2, and this modified MoS2 can be uniformly dispersed in polar solvents (such as acetone, N,N-dimethylformamide, and ethanol), remaining stable for more than 2 weeks. The allyl-modified MoS2 can catalyze the polymerization of polyacrylamide hydrogel and then integrate in the network, which increases the tensile strength of the composite hydrogel. The flexible sensor based on the composite hydrogel exhibits an ideal operating range of 600% and a quick response time of 150 ms. At the same time, the flexible device can also track the massive axial stretching movements of human joints, making it a reliable option for the next wave of wearable sensing technology.
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Affiliation(s)
- Jia Pan
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Xionglin Zhou
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Huimin Gong
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Zhengjun Lin
- Department of Orthopedics, The Second Xiangya Hospital, Central South University, Changsha 410011, Hunan, P. R. China
| | - Haiyan Xiang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Xiao Liu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Xuli Chen
- College of Materials Science and Engineering, Hunan University, South Lushan Road, Changsha 410082, Hunan, P. R. China
| | - Huimin Li
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
| | - Tang Liu
- Department of Orthopedics, The Second Xiangya Hospital, Central South University, Changsha 410011, Hunan, P. R. China
| | - Song Liu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, P. R. China
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22
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Somphonsane R, Chiawchan T, Bootsa-ard W, Ramamoorthy H. CVD Synthesis of MoS 2 Using a Direct MoO 2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4817. [PMID: 37445130 PMCID: PMC10343541 DOI: 10.3390/ma16134817] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 06/29/2023] [Accepted: 07/01/2023] [Indexed: 07/15/2023]
Abstract
In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.
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Affiliation(s)
- Ratchanok Somphonsane
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
- Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Tinna Chiawchan
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Waraporn Bootsa-ard
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
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23
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Ratwani CR, Zhao S, Huang Y, Hadfield M, Kamali AR, Abdelkader AM. Surface Modification of Transition Metal Dichalcogenide Nanosheets for Intrinsically Self-Healing Hydrogels with Enhanced Mechanical Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207081. [PMID: 36861293 DOI: 10.1002/smll.202207081] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 02/10/2023] [Indexed: 06/02/2023]
Abstract
Nanocomposites with enhanced mechanical properties and efficient self-healing characteristics can change how the artificially engineered materials' life cycle is perceived. Improved adhesion of nanomaterials with the host matrix can drastically improve the structural properties and confer the material with repeatable bonding/debonding capabilities. In this work, exfoliated 2H-WS2 nanosheets are modified using an organic thiol to impart hydrogen bonding sites on the otherwise inert nanosheets by surface functionalization. These modified nanosheets are incorporated within the PVA hydrogel matrix and analyzed for their contribution to the composite's intrinsic self-healing and mechanical strength. The resulting hydrogel forms a highly flexible macrostructure with an impressive enhancement in mechanical properties and a very high autonomous healing efficiency of 89.92%. Interesting changes in the surface properties after functionalization show that such modification is highly suitable for water-based polymeric systems. Probing into the healing mechanism using advanced spectroscopic techniques reveals the formation of a stable cyclic structure on the surface of nanosheets, mainly responsible for the improved healing response. This work opens an avenue toward the development of self-healing nanocomposites where chemically inert nanoparticles participate in the healing network rather than just mechanically reinforcing the matrix by slender adhesion.
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Affiliation(s)
- Chirag R Ratwani
- Department of Design and Engineering, Bournemouth University, Talbot Campus, Poole, BH12 5BB, UK
| | - Shengxi Zhao
- Energy and Environmental Materials Research Centre (E2MC), School of Metallurgy, Northeastern University, Shenyang, 110819, P. R. China
| | - Yi Huang
- Department of Design and Engineering, Bournemouth University, Talbot Campus, Poole, BH12 5BB, UK
| | - Mark Hadfield
- Department of Design and Engineering, Bournemouth University, Talbot Campus, Poole, BH12 5BB, UK
| | - Ali Reza Kamali
- Energy and Environmental Materials Research Centre (E2MC), School of Metallurgy, Northeastern University, Shenyang, 110819, P. R. China
| | - Amr M Abdelkader
- Department of Design and Engineering, Bournemouth University, Talbot Campus, Poole, BH12 5BB, UK
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24
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Romanov R, Zabrosaev IV, Kozodaev MG, Yakubovsky DI, Tatmyshevskiy MK, Timofeev AA, Doroshina NV, Novikov SM, Volkov VS, Markeev AM. Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS 2 Films. ACS OMEGA 2023; 8:16579-16586. [PMID: 37214699 PMCID: PMC10193411 DOI: 10.1021/acsomega.2c06794] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 04/19/2023] [Indexed: 05/24/2023]
Abstract
Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS2 and stable hexagonal 2H-MoS2 phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS2 films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS2 films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, Mo1-xRexS2 films with a 1T-MoS2 fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS2 phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.
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Affiliation(s)
- Roman
I. Romanov
- Moscow
Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia
| | - Ivan V. Zabrosaev
- Moscow
Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia
| | - Maxim G. Kozodaev
- Moscow
Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia
| | - Dmitry I. Yakubovsky
- Center
for Photonics & 2D Materials, Moscow
Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia
| | - Mikhail K. Tatmyshevskiy
- Center
for Photonics & 2D Materials, Moscow
Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia
| | - Aleksey A. Timofeev
- National
Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh., 31, Moscow 115409, Russia
| | - Natalia V. Doroshina
- Center
for Photonics & 2D Materials, Moscow
Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia
| | - Sergey M. Novikov
- Center
for Photonics & 2D Materials, Moscow
Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia
| | - Valentyn S. Volkov
- Center
for Photonics & 2D Materials, Moscow
Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia
| | - Andrey M. Markeev
- Moscow
Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia
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25
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Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
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Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
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26
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Behnia S, Fathizadeh S, Hosseinnezhad P, Nemati F. Modulation of a DNA-based photodetector: Virus-Chromophore hybridization. Chem Phys 2023. [DOI: 10.1016/j.chemphys.2023.111899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/30/2023]
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27
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Peng Y, Wang Z, Shao Y, Xu J, Wang X, Hu J, Zhang KQ. A Review of Recent Development of Wearable Triboelectric Nanogenerators Aiming at Human Clothing for Energy Conversion. Polymers (Basel) 2023; 15:polym15030508. [PMID: 36771809 PMCID: PMC9918950 DOI: 10.3390/polym15030508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Revised: 01/13/2023] [Accepted: 01/16/2023] [Indexed: 01/20/2023] Open
Abstract
Research in the field of wearable triboelectric generators is increasing, and pioneering research into real applications of this technology is a growing need in both scientific and industry research. In addition to the two key characteristics of wearable triboelectric generators of flexibility and generating friction, features such as softness, breathability, washability, and wear resistance have also attracted a lot of attention from the research community. This paper reviews wearable triboelectric generators that are used in human clothing for energy conversion. The study focuses on analyzing fabric structure and examining the integration method of flexible generators and common fibers/yarns/textiles. Compared to the knitting method, the woven method has fewer restrictions on the flexibility and thickness of the yarn. Remaining challenges and perspectives are also investigated to suggest how to bring fully generated clothing to practical applications in the near future.
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Affiliation(s)
- Yu Peng
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou 215123, China
- College of Advanced Material Engineering, Jiaxing Nanhu University, Jiaxing 314001, China
| | - Zheshan Wang
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou 215123, China
| | - Yunfei Shao
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou 215123, China
| | - Jingjing Xu
- i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou 215123, China
| | - Xiaodong Wang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Jianchen Hu
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou 215123, China
- Correspondence: (J.H.); (K.-Q.Z.)
| | - Ke-Qin Zhang
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou 215123, China
- Correspondence: (J.H.); (K.-Q.Z.)
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28
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Rhee D, Han B, Jung M, Kim J, Song O, Kang J. Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57153-57164. [PMID: 36519946 DOI: 10.1021/acsami.2c16738] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) semiconductors are promising for next-generation electronics that are lightweight, flexible, and stretchable. Achieving stretchability with suppressed crack formation, however, is still difficult without introducing lithographically etched micropatterns, which significantly reduces active device areas. Herein, we report a solution-based hierarchical structuring to create stretchable semiconducting films that are continuous over wafer-scale areas via self-assembly of two-dimensional nanosheets. Electrochemically exfoliated MoS2 nanosheets with large lateral sizes (∼1 μm) are first assembled into a uniform film on a prestrained thermoplastic substrate, followed by strain relief of the substrate to create nanoscale wrinkles. Subsequent strain-relief cycles with the presence of soluble polymer films produce hierarchical wrinkles with multigenerational structures. Stretchable MoS2 films are then realized by curing an elastomer directly on the wrinkled surface and dissolving the thermoplastic. Three-generation hierarchical MoS2 wrinkles are resistant to cracking up to nearly 100% substrate stretching and achieve drastically enhanced photoresponsivity compared to the flat counterpart over the visible and NIR regimes, while the flat MoS2 film is beneficial in creating strain sensors because of its strain-dependent electrical response.
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Affiliation(s)
- Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Boyun Han
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Okin Song
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, SKKU, Suwon 16419, Republic of Korea
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29
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Behera P, Karunakaran S, Sahoo J, Bhatt P, Rana S, De M. Ligand Exchange on MoS 2 Nanosheets: Applications in Array-Based Sensing and Drug Delivery. ACS NANO 2022; 17:1000-1011. [PMID: 36482513 DOI: 10.1021/acsnano.2c06994] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional MoS2 nanosheets (2D-MoS2) have been widely used in many biological applications due to their distinctive physicochemical properties. Further, the development of surface modification using thiolated ligands allows us to use them for many specific applications. But the effect of possible ligand exchange on 2D-MoS2 has never been explored, which can play an important role in diverse biological applications. In this study, we have observed the ligand-exchange phenomenon on 2D-MoS2 in the presence of different thiolated ligands. The initial study proceeded with boron-dipyrromethene (BODIPY) functionalized MoS2 with different concentrations of glutathione (GSH), which is the most abundant thiol species in the cytoplasm of various cancer cells. It was found that in the presence of GSH the fluorescence of BODIPY can be regenerated, which is time and concentration dependent. We have also examined this phenomenon with different thiol ligands and transition-metal dichalcogenides (TMDs). We observed a variable rate of ligand exchange in different solvents, surface functionality, and receptor environments that helped us to construct sensor arrays. Interestingly, a ligand-exchange process was not observed in the presence of dithiols. Further, this concept was applied to a cancerous cell line for in vitro delivery. We found that BODIPY-functionalized 2D-MoS2 undergoes thiol exchange by intracellular GSH and subsequently enhanced the fluorescence in the cytoplasm of cancer cells. This strategy can be applied to the development of 2D-TMD-based materials for various biological applications related to ligand exchange.
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Affiliation(s)
- Pradipta Behera
- Department of Organic Chemistry, Indian Institute of Science, Bangalore 560012, India
| | - Subbaraj Karunakaran
- Department of Organic Chemistry, Indian Institute of Science, Bangalore 560012, India
| | - Jagabandhu Sahoo
- Department of Organic Chemistry, Indian Institute of Science, Bangalore 560012, India
| | - Preeti Bhatt
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Subinoy Rana
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Mrinmoy De
- Department of Organic Chemistry, Indian Institute of Science, Bangalore 560012, India
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30
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Martella C, Campi D, Tummala PP, Kozma E, Targa P, Codegoni D, Bernasconi M, Lamperti A, Molle A. Extreme Bendability of Atomically Thin MoS 2 Grown by Chemical Vapor Deposition Assisted by Perylene-Based Promoter. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12224050. [PMID: 36432336 PMCID: PMC9697825 DOI: 10.3390/nano12224050] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 11/07/2022] [Accepted: 11/15/2022] [Indexed: 05/14/2023]
Abstract
Shaping two-dimensional (2D) materials in arbitrarily complex geometries is a key to designing their unique physical properties in a controlled fashion. This is an elegant solution, taking benefit from the extreme flexibility of the 2D layers but requiring the ability to force their spatial arrangement from flat to curved geometries in a delicate balance among free-energy contributions from strain, slip-and-shear mechanisms, and adhesion to the substrate. Here, we report on a chemical vapor deposition approach, which takes advantage of the surfactant effects of organic molecules, namely the tetrapotassium salt of perylene-3,4,9,10-tetracarboxylic acid (PTAS), to conformally grow atomically thin layers of molybdenum disulphide (MoS2) on arbitrarily nanopatterned substrates. Using atomically resolved transmission electron microscope images and density functional theory calculations, we show that the most energetically favorable condition for the MoS2 layers consists of its adaptation to the local curvature of the patterned substrate through a shear-and-slip mechanism rather than strain accumulation. This conclusion also reveals that the perylene-based molecules have a role in promoting the adhesion of the layers onto the substrate, no matter the local-scale geometry.
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Affiliation(s)
- Christian Martella
- CNR IMM, Unit of Agrate Brianza, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
- Correspondence: (C.M.); (D.C.); (A.L.); (A.M.)
| | - Davide Campi
- Department of Material Science, University of Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
- Correspondence: (C.M.); (D.C.); (A.L.); (A.M.)
| | - Pinaka Pani Tummala
- CNR IMM, Unit of Agrate Brianza, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
- Department of Mathematics and Physics, Università Cattolica del Sacro Cuore, Via della Garzetta 48, I-25133 Brescia, Italy
- Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium
| | - Erika Kozma
- CNR SCITEC, Unit of Milan, Via Corti 12, I-20133 Milano, Italy
| | - Paolo Targa
- STMicroelectronics, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
| | - Davide Codegoni
- STMicroelectronics, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
| | - Marco Bernasconi
- Department of Material Science, University of Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
| | - Alessio Lamperti
- CNR IMM, Unit of Agrate Brianza, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
- Correspondence: (C.M.); (D.C.); (A.L.); (A.M.)
| | - Alessandro Molle
- CNR IMM, Unit of Agrate Brianza, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy
- Correspondence: (C.M.); (D.C.); (A.L.); (A.M.)
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31
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Devi A, Kumar N, Thakur A, Kumar A, Singh A, Ahluwalia PK. Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX 2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons. ACS OMEGA 2022; 7:40054-40066. [PMID: 36385828 PMCID: PMC9648153 DOI: 10.1021/acsomega.2c04763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 10/13/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are new crystalline materials with exotic electronic, mechanical, and optical properties. Due to their inherent exceptional mechanical strength, these 2D materials provide us the best platform for strain engineering. In this study, we have performed first-principles calculations to study the effect of uniaxial strains on the electronic, magnetic, and mechanical properties of transition-metal dichalcogenides (TMDs) MX2 (where M = Cr, Mo, W and X = S, Se), monolayers (2D), and armchair and zigzag nanoribbons (1D). For the mechanical strength, we determined the tensile strength (σ) and Young's modulus (Y) and observed that σ and Y are higher in monolayers (most in WS2ML) as compared to nanoribbons where monolayers resist tension up to 25-28% strain while nanoribbons (armchair and zigzag) can be only up to 5-10%. Deformation potential (Δ p ) in the linear regime near the equilibrium position(ϵ < 2%) has also been calculated, and its effect on monolayers is observed less as compared to nanoribbons. In addition, unstrained nonmagnetic monolayers are direct band gap semiconductors (D) which changed to indirect band gap semiconductors (I) with the application of strain. Ferromagnetic states of metallic zigzag nanoribbons (including up spin channel of 7-CrS2NR and 7-CrSe2NR) are greatly affected by strain and show half-metal-like behavior in different strain range. The magnetic moment (μ) that is predominantly observed in zigzag nanoribbons is 2 times higher than that of other nanoribbons. This magnetism in nanoribbons is mostly caused by transition-metal atoms (M = Cr, Mo, W). Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.
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Affiliation(s)
- Anjna Devi
- Himachal
Pradesh University, Shimla171005, India
- Department
of Physics, Swami Vivekanand Government
College, Ghumarwin, Himachal Pradesh174021, India
| | - Narender Kumar
- Department
of Physics, College of Science, United Arab
Emirates University, 15551Al Ain, UAE
| | - Abu Thakur
- Department
of Physics, Swami Vivekanand Government
College, Ghumarwin, Himachal Pradesh174021, India
| | - Arun Kumar
- Department
of Physics, Swami Vivekanand Government
College, Ghumarwin, Himachal Pradesh174021, India
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Liu X, Li Y, Zeng L, Li X, Chen N, Bai S, He H, Wang Q, Zhang C. A Review on Mechanochemistry: Approaching Advanced Energy Materials with Greener Force. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108327. [PMID: 35015320 DOI: 10.1002/adma.202108327] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Revised: 01/06/2022] [Indexed: 06/14/2023]
Abstract
Mechanochemistry with solvent-free and environmentally friendly characteristics is one of the most promising alternatives to traditional liquid-phase-based reactions, demonstrating epoch-making significance in the realization of different types of chemistry. Mechanochemistry utilizes mechanical energy to promote physical and chemical transformations to design complex molecules and nanostructured materials, encourage dispersion and recombination of multiphase components, and accelerate reaction rates and efficiencies via highly reactive surfaces. In particular, mechanochemistry deserves special attention because it is capable of endowing energy materials with unique characteristics and properties. Herein, the latest advances and progress in mechanochemistry for the preparation and modification of energy materials are reviewed. An outline of the basic knowledge, methods, and characteristics of different mechanochemical strategies is presented, distinguishing this review from most mechanochemistry reviews that only focus on ball-milling. Next, this outline is followed by a detailed and insightful discussion of mechanochemistry-involved energy conversion and storage applications. The discussion comprehensively covers aspects of energy transformations from mechanical/optical/chemical energy to electrical energy. Finally, next-generation advanced energy materials are proposed. This review is intended to bring mechanochemistry to the frontline and guide this burgeoning field of interdisciplinary research for developing advanced energy materials with greener mechanical force.
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Affiliation(s)
- Xingang Liu
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Yijun Li
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Li Zeng
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Xi Li
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Ning Chen
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Shibing Bai
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Hanna He
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Qi Wang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
| | - Chuhong Zhang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu, 610065, China
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Dat VD, Vu TV, Lavrentyev AA, Khyzhun OY, Hieu NN, Tong HD. First-principles study on the structural properties of 2D MXene SnSiGeN 4 and its electronic properties under the effects of strain and an external electric field. RSC Adv 2022; 12:29113-29123. [PMID: 36320756 PMCID: PMC9555058 DOI: 10.1039/d2ra05265b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Accepted: 09/24/2022] [Indexed: 12/04/2022] Open
Abstract
The MXene SnSiGeN4 monolayer as a new member of the MoSi2N4 family was proposed for the first time, and its structural and electronic properties were explored by applying first-principles calculations with both PBE and hybrid HSE06 approaches. The layered hexagonal honeycomb structure of SnSiGeN4 was determined to be stable under dynamical effects or at room temperature of 300 K, with a rather high cohesive energy of 7.0 eV. The layered SnSiGeN4 has a Young's modulus of 365.699 N m-1 and a Poisson's ratio of 0.295. The HSE06 approach predicted an indirect band gap of around 2.4 eV for the layered SnSiGeN4. While the major donation from the N-p orbitals to the band structure makes SnSiGeN4's band gap close to those of similar 2D MXenes, the smaller distributions from the other orbitals of Sn, Si, and Ge slightly vary this band gap. The work functions of the GeN and SiN surfaces are 6.367 eV and 5.903 eV, respectively. The band gap of the layered SnSiGeN4 can be easily tuned by strain and an external electric field. A semiconductor-metal transition can occur at certain values of strain, and with an electric field higher than 5 V nm-1. The electron mobility of the layered SnSiGeN4 can reach up to 677.4 cm2 V-1 s-1, which is much higher than the hole mobility of about 52 cm2 V-1 s-1. The mentioned characteristics make the layered SnSiGeN4 a very promising material for use in electronic and photoelectronic devices, and for solar energy conversion.
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Affiliation(s)
- Vo D. Dat
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang UniversityHo Chi Minh CityVietnam,Faculty of Mechanical – Electrical and Computer Engineering, Van Lang UniversityHo Chi Minh CityVietnam
| | - Tuan V. Vu
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang UniversityHo Chi Minh CityVietnam,Faculty of Mechanical – Electrical and Computer Engineering, Van Lang UniversityHo Chi Minh CityVietnam
| | - A. A. Lavrentyev
- Department of Electrical Engineering and Electronics, Don State Technical University1 Gagarin Square, 344010 Rostov-on-DonRussian Federation
| | - O. Y. Khyzhun
- Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine3 Krzhyzhanovsky StreetUA-03142 KyivUkraine
| | - Nguyen N. Hieu
- Institute of Research and Development, Duy Tan UniversityDa Nang 550000Vietnam,Faculty of Natural Sciences, Duy Tan UniversityDa Nang 550000Vietnam
| | - Hien D. Tong
- Faculty of Engineering, Vietnamese-German UniversityBinh DuongVietnam
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Macha M, Ji HG, Tripathi M, Zhao Y, Thakur M, Zhang J, Kis A, Radenovic A. Wafer-scale MoS 2 with water-vapor assisted showerhead MOCVD. NANOSCALE ADVANCES 2022; 4:4391-4401. [PMID: 36321146 PMCID: PMC9552924 DOI: 10.1039/d2na00409g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Accepted: 09/01/2022] [Indexed: 06/16/2023]
Abstract
Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS2 synthesis with commercial showerhead reactors.
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Affiliation(s)
- Michal Macha
- Laboratory of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Hyun Goo Ji
- Laboratory of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Mukesh Tripathi
- Laboratory of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Yanfei Zhao
- Laboratory of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Mukeshchand Thakur
- Laboratory of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Jing Zhang
- Laboratory of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Andras Kis
- Laboratory of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
| | - Aleksandra Radenovic
- Laboratory of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL) Lausanne 1015 Switzerland
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35
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Wang W, Gao S, Wang Y, Li Y, Yue W, Niu H, Yin F, Guo Y, Shen G. Advances in Emerging Photonic Memristive and Memristive-Like Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105577. [PMID: 35945187 PMCID: PMC9534950 DOI: 10.1002/advs.202105577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Revised: 06/06/2022] [Indexed: 05/19/2023]
Abstract
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.
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Affiliation(s)
- Wenxiao Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Song Gao
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yaqi Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yang Li
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Wenjing Yue
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Hongsen Niu
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Feifei Yin
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yunjian Guo
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Guozhen Shen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
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36
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Conde-Rubio A, Liu X, Boero G, Brugger J. Edge-Contact MoS 2 Transistors Fabricated Using Thermal Scanning Probe Lithography. ACS APPLIED MATERIALS & INTERFACES 2022; 14:42328-42336. [PMID: 36070441 PMCID: PMC9501915 DOI: 10.1021/acsami.2c10150] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 08/16/2022] [Indexed: 06/15/2023]
Abstract
The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integration into final devices. Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to deteriorate the 2DMs' properties. Here, t-SPL is used for the fabrication of MoS2-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS2 FETs, combining the hot-tip patterning and Ar+ milling to etch the 2DM. To avoid contamination of the contact interface by atmospheric gas molecules, etching and metal deposition are performed without breaking the vacuum conditions in between. With this process, edge-contact MoS2 FETs are successfully fabricated and characterized. On/off ratios up to 108 and 109 are obtained at room temperature in air and vacuum, respectively, i.e., comparable with the best values reported in the literature.
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37
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Alkallas FH, Ben Gouider Trabelsi A, Shkir M, AlFaify S. Enhanced Room Temperature Ammonia Gas Sensing Properties of Fe-Doped MoO 3 Thin Films Fabricated Using Nebulizer Spray Pyrolysis. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2797. [PMID: 36014662 PMCID: PMC9414738 DOI: 10.3390/nano12162797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Revised: 08/08/2022] [Accepted: 08/10/2022] [Indexed: 06/15/2023]
Abstract
MoO3 thin films are fabricated using nebulizer spray pyrolysis technique, which is doped with Fe at various concentrations of 1, 2, 3, and 4% for ammonia gas sensors application at room temperature. X-ray diffraction (XRD) study confirms the growth of the crystal by Fe doping up to 3%, nano rods shape morphology of the thin film samples observed by field emission scanning electron microscope (FESEM), reduction in bandgap is evidenced via UV-VIS spectrophotometer. Gas sensing study is performed using gas analyzing chamber attached with Keithley source meter. Since 3% Fe doped MoO3 sample displayed nano rods over the film surface which exhibits highest sensitivity of 38,500%, in a short period of raise and decay time 54 and 6 s. Our findings confirms that the 3% Fe doped MoO3 films suitability for ammonia gas sensing application.
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Affiliation(s)
- Fatemah H. Alkallas
- Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Amira Ben Gouider Trabelsi
- Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Mohd Shkir
- Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia
- Department of Chemistry and University Centre for Research & Development, Chandigarh, University, Mohali 140413, Punjab, India
| | - Salem AlFaify
- Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia
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38
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Garrido M, Barrejón M, Berrocal JA, Syrgiannis Z, Prato M. Polyaromatic cores for the exfoliation of popular 2D materials. NANOSCALE 2022; 14:8986-8994. [PMID: 35699137 DOI: 10.1039/d2nr00894g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) nanomaterials have attracted interest from the scientific community due to their unique properties. The production of these materials has been carried out by diverse methodologies, the liquid phase exfoliation being the most promising one due to its simplicity and potential scalability. The use of several stabilizers allows to obtain dispersions of these 2D nanomaterials in solvents with low boiling points. Herein we describe a general exfoliation method for different 2D materials employing a biphasic water/dichloromethane system and two different (poly)aromatic hydrocarbons (PAHs). This method allows us to obtain dispersions of the exfoliated 2D materials with high concentrations in the organic solvent. Due to the low boiling point of dichloromethane, and therefore its easy removal, the obtained dispersions can be employed as additives for different composites. We corroborate that the exfoliation efficiency is improved due to the π-π and van der Waals interactions between the PAHs and the layers of the 2D materials.
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Affiliation(s)
- Marina Garrido
- Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
| | - Myriam Barrejón
- Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
- Neural Repair and Biomaterials Laboratory, Hospital Nacional de Parapléjicos (SESCAM), Finca la Peraleda s/n, 45071 Toledo, Spain
| | - José Augusto Berrocal
- Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland
| | - Zois Syrgiannis
- Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
- Simpson Querrey Institute for BioNanotechnology, Northwestern University, Chicago, IL 60611, USA
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Maurizio Prato
- Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, Università degli Studi di Trieste, Via Licio Giorgieri 1, Trieste 34127, Italy.
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramón 194, Donostia-San Sebastián 20014, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao 48013, Spain
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39
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Yu H, Li D, Shang Y, Pei L, Zhang G, Yan H, Wang L. Transport properties of MoS 2/V 7(Bz) 8 and graphene/V 7(Bz) 8 vdW junctions tuned by bias and gate voltages. RSC Adv 2022; 12:17422-17433. [PMID: 35765433 PMCID: PMC9189623 DOI: 10.1039/d2ra02196j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 06/06/2022] [Indexed: 12/02/2022] Open
Abstract
The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.
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Affiliation(s)
- Hong Yu
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Danting Li
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Yan Shang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Lei Pei
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Guiling Zhang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Hong Yan
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Long Wang
- HeiLongJiang Construction Investment Group Co. Ltd No. 523, Sanda Dongli Road Harbin 150040 P. R. China
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Kim M, Giteau M, Ahsan N, Miyashita N, Thirumalaisamy L, Chen C, Redwing JM, Okada Y. Co-deposition of MoS 2films by reactive sputtering and formation of tree-like structures. NANOTECHNOLOGY 2022; 33:345708. [PMID: 35584615 DOI: 10.1088/1361-6528/ac70e3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are versatile layered materials with potential applications ranging from optoelectronic devices to water splitting. Top-down fabrication methods such as exfoliation are not practical for a large-scale production of high-quality devices: a bottom-up approach such as sputtering, a low-temperature deposition method, is more suitable. However, due to its anisotropic nature, the growth mechanism of molybdenum disulfide (MoS2) via sputtering is complex and remains to be investigated in detail. In this paper, we study the growth of MoS2 films co-deposited by using a sulfur (S) hot-lip cell and a molybdenum (Mo) sputtering target via reactive sputtering. The impact of S partial pressure on the structure and morphology of MoS2films was systematically characterized, and it was observed that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure. The growth front of the structures is ascribed to the anisotropic incorporation of adatoms with regards to the orientation of MoS2.
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Affiliation(s)
- Myeongok Kim
- Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, JAPAN
| | - Maxime Giteau
- ICFO, ICFO-The Institute of Photonic Sciences, Mediterranean Technology Park, Avinguda Carl Friedrich Gauss, 3, Castelldefels, Catalunya, 08860, SPAIN
| | - Nazmul Ahsan
- Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, JAPAN
| | - Naoya Miyashita
- Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, JAPAN
| | - Logu Thirumalaisamy
- Sustainable Product Engineering Centre for Innovative Functional Industrial Coatings "SPECIFIC", Swansea University, Singleton Park, Sketty, Swansea, West Glamorgan, SA2 8PP, UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND
| | - Chen Chen
- The Pennsylvania State University University Park, 2D Crystal Consortium Materials Research Institute, University Park, Pennsylvania, 16802-1204, UNITED STATES
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University University Park, N336 MSC Bldg., University Park, Pennsylvania, 16802-1204, UNITED STATES
| | - Yoshitaka Okada
- The University of Tokyo, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8904, JAPAN
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41
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Investigations on Structural, Electronic and Optical Properties of MoS2/CDs Heterostructure via First-Principles Study. Catalysts 2022. [DOI: 10.3390/catal12050456] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023] Open
Abstract
Much effort has been made for MoS2/CDs heterostructure application in the field of photocatalysts. However, the impacts of functional groups of CDs on the properties of the heterostructure are ambiguous. Here, the impacts of hydroxyl, carbonyl, and carboxyl groups of CDs on the structural, electronic, and optical properties of MoS2/CDs’ heterostructure were investigated by conducting a first-principles study. The calculated energy band structure and band gap of monolayer MoS2 were consistent with the experimental values. The band gap of MoS2 was obviously decreased after the construction of MoS2/CDs and MoS2/CDs–hydroxyl/carboxyl, thus helping to improve the light adsorption range. However, the band gap of MoS2/CDs–carbonyl was slightly increased compared with that of monolayer MoS2. The CDs with functional groups can spontaneously bind on 2D-MoS2 and form a stable MoS2/CDs heterostructure. It was confirmed that the MoS2/CDs’ heterostructure belongs to the typical type-II band alignment, which contributes to the separation of photogenerated charge and hole. Notably, the carbonyl and carboxyl groups on the CDs obviously reduced the optical absorption intensity of the MoS2/CDs in the ultraviolet region. The hydroxyl groups have little effect on optical absorption intensity. Thus, the CDs with more hydroxyl groups are beneficial to produce a higher photocatalytic performance. This paper reveals the impacts of surface functional groups and provides a promising approach for designing the MoS2/CDs’ heterostructure to enhance the photocatalytic properties.
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Yue L, Xu D, Wei Z, Zhao T, Lin T, Tenne R, Zak A, Li Q, Liu B. Size and Shape's Effects on the High-Pressure Behavior of WS 2 Nanomaterials. MATERIALS 2022; 15:ma15082838. [PMID: 35454530 PMCID: PMC9024497 DOI: 10.3390/ma15082838] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 03/31/2022] [Accepted: 04/11/2022] [Indexed: 11/23/2022]
Abstract
Exploring the behavior of nanocrystals with varying shapes and sizes under high pressure is crucial to understanding the relationship between the morphology and properties of nanomaterials. In this study, we investigated the compression behaviors of WS2 nanotubes (NT-WS2) and fullerene-like nanoparticles (IF-WS2) by in situ high-pressure X-ray diffraction (XRD) and Raman spectroscopy. It was found that the bulk modulus of NT-WS2 is 81.7 GPa, which is approximately twice as large as that of IF-WS2 (46.3 GPa). This might be attributed to the fact that IF-WS2 with larger d-spacing along the c-axis and higher defect density are more compressible under isotropic pressure than NT-WS2. Thus, the slender NT-WS2 possess a more stable crystal structure than the IF-WS2. Our findings reveal that the effects of morphology and size play crucial roles in determining the high-pressure properties of WS2 nanoparticles, and provide significant insight into the relationship between structure and properties.
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Affiliation(s)
- Lei Yue
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
| | - Dan Xu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
| | - Ziyu Wei
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
| | - Tingting Zhao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
| | - Tao Lin
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
| | - Reshef Tenne
- Department of Materials and Interfaces, Weizmann Institute, Rehovot 76100, Israel
- Correspondence: (R.T.); (Q.L.)
| | - Alla Zak
- Faculty of Sciences, HIT—Holon Institute of Technology, 52 Golomb St., Holon 5810201, Israel;
| | - Quanjun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
- Correspondence: (R.T.); (Q.L.)
| | - Bingbing Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; (L.Y.); (D.X.); (Z.W.); (T.Z.); (T.L.); (B.L.)
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Ramaraj SG, Nundy S, Zhao P, Elamaran D, Tahir AA, Hayakawa Y, Muruganathan M, Mizuta H, Kim SW. RF Sputtered Nb-Doped MoS 2 Thin Film for Effective Detection of NO 2 Gas Molecules: Theoretical and Experimental Studies. ACS OMEGA 2022; 7:10492-10501. [PMID: 35382281 PMCID: PMC8973088 DOI: 10.1021/acsomega.1c07274] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Accepted: 03/02/2022] [Indexed: 05/30/2023]
Abstract
Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS2 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS2 gas sensor synthesized through physical vapor deposition (PVD) toward NO2 at different temperatures. The electronic states of MoS2 and Nb-doped MOS2 monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS2 and its electronic properties. The Nb-doped MoS2 showed an ultrafast response and recovery time of t rec = 30/85 s toward 5 ppm of NO2 at their optimal operating temperature (100 °C). The experimental results complement the electron difference density functional theory calculation, showing both physisorption and chemisorption of NO2 gas molecules on niobium substitution doping in MoS2.
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Affiliation(s)
- Sankar Ganesh Ramaraj
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Srijita Nundy
- College
of Engineering, Mathematics and Physical Sciences, Renewable Energy, University of Exeter, Penryn, Cornwall TR10
9FE, United Kingdom
| | - Pin Zhao
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Durgadevi Elamaran
- Graduate
School of Science and Technology, Shizuoka
University, Hamamatsu 432-8011, Japan
| | - Asif Ali Tahir
- College
of Engineering, Mathematics and Physical Sciences, Renewable Energy, University of Exeter, Penryn, Cornwall TR10
9FE, United Kingdom
| | - Yasuhiro Hayakawa
- Research
Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
| | - Manoharan Muruganathan
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Hiroshi Mizuta
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Sang-Woo Kim
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Yao B, Yao J, Fan Z, Zhao J, Zhang K, Huang W. Recent Advances of Versatile MXenes for Electrochemical Enzyme‐Based Biosensors, Immunosensors, and Nucleic Acid‐Based Biosensors. ChemElectroChem 2022. [DOI: 10.1002/celc.202200103] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Bo Yao
- Nanjing Tech University Institute of Advanced Materials CHINA
| | - Jiantao Yao
- Nanjing Tech University Institute of Advanced Materials CHINA
| | - Zhenqiang Fan
- Jiangsu Institute of Nuclear Medicine NHC Key Laboratory of, Jiangsu Key Laboratory of Molecular Nuclear Medicine CHINA
| | - Jianfeng Zhao
- Nanjing Tech University Institute of Advanced Materials Xinmofan Road 5 210000 Nanjing CHINA
| | - Kai Zhang
- Jiangsu Institute of Nuclear Medicine NHC Key Laboratory of, Jiangsu Key Laboratory of Molecular Nuclear Medicine CHINA
| | - Wei Huang
- Nanjing Tech University Institute of Advanced Materials CHINA
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Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment. MATERIALS 2022; 15:ma15051794. [PMID: 35269024 PMCID: PMC8911297 DOI: 10.3390/ma15051794] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Revised: 02/21/2022] [Accepted: 02/25/2022] [Indexed: 12/10/2022]
Abstract
Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.
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Singh M, Ghosh R, Chen YS, Yen ZL, Hofmann M, Chen YF, Hsieh YP. Chemical vapor deposition merges MoS 2 grains into high-quality and centimeter-scale films on Si/SiO 2. RSC Adv 2022; 12:5990-5996. [PMID: 35424587 PMCID: PMC8982092 DOI: 10.1039/d1ra06933k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Accepted: 12/07/2021] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional molybdenum disulfide (MoS2) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS2-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS2 can be directly produced on Si/SiO2 at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS2 domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS2 photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS2 for future applications. Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.![]()
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Affiliation(s)
- Mukesh Singh
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Rapti Ghosh
- Department of Physics, National Central University Chung Li 320 Taiwan.,Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan .,Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
| | - Yu-Siang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan .,Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
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Tseng YT, Lu LS, Shen FC, Wang CH, Sung HY, Chang WH, Wu WW. In Situ Atomic-Scale Observation of Monolayer MoS 2 Devices under High-Voltage Biasing via Transmission Electron Microscopy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106411. [PMID: 34995002 DOI: 10.1002/smll.202106411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Revised: 11/27/2021] [Indexed: 06/14/2023]
Abstract
2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.
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Affiliation(s)
- Yi-Tang Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
| | - Li-Syuan Lu
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
| | - Fang-Chun Shen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
| | - Che-Hung Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
| | - Hsin-Ya Sung
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
- Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Nangang Dist., Taipei City, 11529, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Yang Ming Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan
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Triboelectric Nanogenerators as Active Tactile Stimulators for Multifunctional Sensing and Artificial Synapses. SENSORS 2022; 22:s22030975. [PMID: 35161721 PMCID: PMC8840436 DOI: 10.3390/s22030975] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Revised: 01/19/2022] [Accepted: 01/24/2022] [Indexed: 01/27/2023]
Abstract
The wearable tactile sensors have attracted great attention in the fields of intelligent robots, healthcare monitors and human-machine interactions. To create active tactile sensors that can directly generate electrical signals in response to stimuli from the surrounding environment is of great significance. Triboelectric nanogenerators (TENGs) have the advantages of high sensitivity, fast response speed and low cost that can convert any type of mechanical motion in the surrounding environment into electrical signals, which provides an effective strategy to design the self-powered active tactile sensors. Here, an overview of the development in TENGs as tactile stimulators for multifunctional sensing and artificial synapses is systematically introduced. Firstly, the applications of TENGs as tactile stimulators in pressure, temperature, proximity sensing, and object recognition are introduced in detail. Then, the research progress of TENGs as tactile stimulators for artificial synapses is emphatically introduced, which is mainly reflected in the electrolyte-gate synaptic transistors, optoelectronic synaptic transistors, floating-gate synaptic transistors, reduced graphene oxides-based artificial synapse, and integrated circuit-based artificial synapse and nervous systems. Finally, the challenges of TENGs as tactile stimulators for multifunctional sensing and artificial synapses in practical applications are summarized, and the future development prospects are expected.
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Luxa J, Spejchalová L, Jakubec I, Sofer Z. MoS 2 stacking matters: 3R polytype significantly outperforms 2H MoS 2 for the hydrogen evolution reaction. NANOSCALE 2021; 13:19391-19398. [PMID: 34532724 DOI: 10.1039/d1nr03284d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Transition metal dichalcogenides (TMDs) are an intriguing family of materials with large application potential in a variety of scientific fields ranging from electronics to electrocatalysis. Within this group of materials, MoS2 has been attracting a lot of scientific attention due to its chemical and physical properties. In this report, we studied the exfoliation of the largely unexplored 3R MoS2 polytype prepared by high-temperature, high-pressure synthesis. Bulk as well as sodium naphthalenide exfoliated materials were studied in terms of their quality and performance for the hydrogen evolution reaction (HER). The HER performance was benchmarked versus the commonly available 2H polytype. The reported results show that the 3R polytype is more suitable for the conversion of MoS2 into the metallic 1T phase, which was attributed to surface oxidation occurring in the 2H polytype. Higher content of the 1T phase then resulted in an overall lower overpotential of -0.25 V vs. RHE for the 3R polytype compared with the overpotential of -0.30 V for the 2H polytype. These results show that the 3R polytype might serve as a better starting point for the synthesis of highly active chemically exfoliated MoS2 catalysts for hydrogen evolution.
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Affiliation(s)
- Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Lucie Spejchalová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Ivo Jakubec
- Institute of Inorganic Chemistry of the AS CR, v.v.i., 25068 Husinec-Řež, Academy of Sciences of the Czech Republic, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
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Huo J, Xiao Y, Sun T, Zou G, Shen D, Feng B, Lin L, Wang W, Zhao G, Liu L. Femtosecond Laser Irradiation-Mediated MoS 2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54246-54257. [PMID: 34726368 DOI: 10.1021/acsami.1c12685] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.
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Affiliation(s)
- Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
- Taiyuan University of Technology, Taiyuan 030024, China
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
| | - Daozhi Shen
- Institute for Quantum Computing, Department of Chemistry, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
| | - Luchan Lin
- Shanghai Key Laboratory of Materials Laser Processing and Modification School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
| | - Guanlei Zhao
- State Key Lab of Automotive Safety and Energy, Tsinghua University, Beijing 100084, China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, China
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