Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Ultrahigh Sensitivity for Thermographic Human-Machine Interface via Precious Metals Atomic Layer Deposition on V-MXene: Computational and Experimental Exploration

Global healthcare based on the Internet of Things system is rapidly transforming to measure precise physiological body parameters without visiting hospitals at remote patients and associated symptoms monitoring. 2D materials and the prevailing mood of current ever-expanding MXene-based sensing devices motivate to introduce first the novel iridium (Ir) precious metal incorporated vanadium (V)-MXene via industrially favored emerging atomic layer deposition (ALD) techniques. The current work contributes a precise control and delicate balance of Ir single atomic forms or clusters on the V-MXene to constitute a unique precious metal-MXene embedded heterostructure (Ir-ALD@V-MXene) in practical real-time sensing healthcare applications to thermography with human-machine interface for the first time. Ir-ALD@V-MXene delivers an ultrahigh durability and sensing performance of 2.4% °C-1 than pristine V-MXene (0.42% °C-1), outperforming several conventionally used MXenes, graphene, underscoring the importance of the Ir-ALD innovative process. Aberration-corrected advanced ultra-high-resolution transmission/scanning transmission electron microscopy confirms the presence of Ir atomic clusters on well-aligned 2D-layered V-MXene structure and their advanced heterostructure formation (Ir-ALD@V-MXene), enhanced sensing mechanism is investigated using density functional theory (DFT) computations. A rational design empowering the Ir-ALD process on least explored V-MXene can potentially unfold further precious metals ALD-process developments for next-generation wearable personal healthcare devices.

Silver Nanowire-Based Flexible Strain Sensor for Human Motion Detection

Accurately capturing human movements is a crucial element of health status monitoring and a necessary precondition for realizing future virtual reality/augmented reality applications. Flexible motion sensors with exceptional sensitivity are capable of detecting physical activities by converting them into resistance fluctuations. Silver nanowires (AgNWs) have become a preferred choice for the development of various types of sensors due to their outstanding electrical conductivity, transparency, and flexibility within polymer composites. Herein, we present the design and fabrication of a flexible strain sensor based on silver nanowires. Suitable substrate materials were selected, and the sensor's sensitivity and fatigue properties were characterized and tested, with the sensor maintaining reliability after 5000 deformation cycles. Different sensors were prepared by controlling the concentration of silver nanowires to achieve the collection of motion signals from various parts of the human body. Additionally, we explored potential applications of these sensors in fields such as health monitoring and virtual reality. In summary, this work integrated the acquisition of different human motion signals, demonstrating great potential for future multifunctional wearable electronic devices.

Magneto-transport in the monolayer MoS2material system for high-performance field-effect transistor applications

Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities, and magnetic fields.

Mixed-Dimensional van der Waals Heterostructure (2D ReS2/0D MoS2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes

Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.

Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS2 cannot survive at high temperature and drastically degrades above 200 °C. Here, we report MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes. With the protection of the h-BN/h-BN structure, the devices can survive at much higher temperature (≥500 °C in air) than those of the MoS2 devices ever reported, which provides us an opportunity to explore the electrical properties and working mechanism of MoS2 devices at high temperature. Unlike the relatively low-temperature situation, the on/off ratio and subthreshold swing of MoS2 FETs show drastic variation at elevated temperature due to the injection of thermal emission carriers. Compared with metal electrode, devices with a graphene electrode demonstrate superior performance at high temperature (∼1-order-larger current on/off ratio, 3-7 times smaller subthreshold swing, and 5-9 times smaller threshold voltage shift). We further realize that the flexible CMOS NOT gate based on the above technique, and demonstrate logic computing at 550 °C. This work may stimulate the fundamental research of properties of 2D materials at high temperature, and also creates conditions for next-generation flexible harsh-environment-resistant integrated circuits.

Unveiling the Radiative Electron-Hole Recombination of MoS2 Nanostructures at Extreme pH Conditions

Nanostructures of MoS2 are in wide research for optoelectronic, energy and biological applications. Opto-electronic and biological applications requires the tuning of photoluminescence properties of MoS2 nanostructures. In this article, nanosized MoS2 is hydrothermally synthesized, and photoluminescence at extreme pH conditions (pH 1 and 13) is examined. As the photoluminescence gives a key to probe the radiative electron-hole recombination, here, photoluminescence emissions are used as an indicator to suggest the pattern of electron-hole recombination in the material at extreme pH conditions. Raman spectroscopy, dynamic light scattering, Scanning electron microscopic image and energy dispersive x-ray analysis are done for material confirmation. At pH 1 and 13 as-synthesized nanostructured MoS2 exhibited both upconversion and downconversion photoluminescence. The intensity of photoluminescence is varied with respect to pH. Excitation-dependent photoluminescence mechanisms and preliminary understanding on the ratio of quantum yields and life span of excited state of as-synthesized nanostructured MoS2 are unveiled here.

Clicking beyond suspensions: understanding thiol-ene chemistry on solid-supported MoS2

Molecular functionalization of MoS2 has attracted a lot of attention due to its potential to afford fine-tuned hybrid materials that benefit from the power of synthetic chemistry and molecular design. Here, we report on the on-surface reaction of maleimides on bulk and molecular beam epitaxy grown single-layer MoS2, both in ambient conditions as well as ultrahigh vacuum using scanning probe microscopy.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Water adsorption on MoS2 under realistic atmosphere conditions and impacts on tribology

Molybdenum disulfide (MoS2) is a 2D material widely used as a dry lubricant. However, exposure to water and oxygen is known to reduce its effectiveness, and therefore an understanding of the uptake of water is important information for mitigating these effects. Here we use grand canonical Monte Carlo simulations to rigorously study water adsorption on MoS2 surfaces and edges with different concentrations of defects under realistic atmospheric conditions (i.e. various temperatures and humidity levels). We find that the amount of water adsorbed depends strongly on the number of defects. Simulations indicate that defect sites are generally saturated with water even at low ppm levels of humidity. Water binds strongly to S vacancies on interlamellar surfaces, but generally only one water molecule can fit on each of these sites. Defects on surfaces or edges of lamellae also strongly attract water molecules that then nucleate small clusters of water bonded via hydrogen bonding. We demonstrate that water preferentially binds to surface defects, but once those are saturated at a critical humidity level of about 500-1000 ppm water, water binds to edge sites where it negatively impacts the tribological performance of MoS2.

Monolayer-like Exciton Recombination Dynamics of Multilayer MoSe2 Observed by Pump-Probe Microscopy

Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton-exciton annihilation (EEA) and Shockley-Read-Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2.

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.

Materials, Designs, and Implementations of Wearable Antennas and Circuits for Biomedical Applications: A Review

The intersection of biomedicine and radio frequency (RF) engineering has fundamentally transformed self-health monitoring by leveraging soft and wearable electronic devices. This paradigm shift presents a critical challenge, requiring these devices and systems to possess exceptional flexibility, biocompatibility, and functionality. To meet these requirements, traditional electronic systems, such as sensors and antennas made from rigid and bulky materials, must be adapted through material science and schematic design. Notably, in recent years, extensive research efforts have focused on this field, and this review article will concentrate on recent advancements. We will explore the traditional/emerging materials for highly flexible and electrically efficient wearable electronics, followed by systematic designs for improved functionality and performance. Additionally, we will briefly overview several remarkable applications of wearable electronics in biomedical sensing. Finally, we provide an outlook on potential future directions in this developing area.

Synthesis, Characterisation, and Functionalisation of Charged Two-Dimensional MoS2

The applications of exfoliated MoS2 are limited by its inert surface and poor interface. We have activated the surface of exfoliated 2H-MoS2 by reacting it with NaBH4 , forming an n-doped material as demonstrated by a negative zeta-potential value ζ=-25 mV and a 20 nm (0.05 eV) red-shift in its photoluminescence spectrum. The novel material's spectral properties were consistent with pristine 2H-MoS2 (as determined by HR-TEM, XPS, pXRD, DRIFT, TGA, and Raman spectroscopy). Importantly, it was readily dispersed in H2 O unlike 2H-MoS2 . Its dispersibility properties were explored for a variety of solvents and could be directly correlated with the relative permittivity of the respective solvents. The charged 2H-MoS2 reacted readily with an organo-iodide to deliver functionalized 2H-MoS2 . Our approach delivers aqueous dispersions of semiconducting 2H-MoS2 , without additives or chemical functionalities, and allows for controlled and facile functionalization of 2H-MoS2 opening multiple new avenues of semi-conducting MoS2 application.

Latest Innovations in 2D Flexible Nanoelectronics

2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.

Stiffer Bonding of Armchair Edge in Single-Layer Molybdenum Disulfide Nanoribbons

The physical and chemical properties of nanoribbon edges are important for characterizing nanoribbons and applying them in electronic devices, sensors, and catalysts. The mechanical response of molybdenum disulfide nanoribbons, which is an important issue for their application in thin resonators, is expected to be affected by the edge structure, albeit this result is not yet being reported. In this work, the width-dependent Young's modulus is precisely measured in single-layer molybdenum disulfide nanoribbons with armchair edges using the developed nanomechanical measurement based on a transmission electron microscope. The Young's modulus remains constant at ≈166 GPa above 3 nm width, but is inversely proportional to the width below 3 nm, suggesting a higher bond stiffness for the armchair edges. Supporting the experimental results, the density functional theory calculations show that buckling causes electron transfer from the Mo atoms at the edges to the S atoms on both sides to increase the Coulomb attraction.

Electrocatalytic study of the hydrogen evolution reaction on MoS2/BP and MoSSe/BP in acidic media

Molecular hydrogen (H2) production by the electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious metal-based electrocatalysts that are earth-abundant and low cost like MoS2. Although it is acid-stable, its applicability is limited by catalytically inactive basal planes, poor electrical transport and inefficient charge transfer at the interface. Therefore, the present work examines its bilayer van der Waals heterostructure (vdW HTS). The second constituent monolayer boron phosphide (BP) is advantageous as an electrode material owing to its chemical stability in both oxygen and water environments. Here, we have performed first-principles based calculations under the framework of density functional theory (DFT) for the HER in an electrochemical double layer model with the BP monolayer, MoS2/BP and MoSSe/BP vdW HTSs. The climbing image nudged elastic band method (CI-NEB) has been employed to determine the minimum energy pathways for Tafel and Heyrovsky reactions. The calculations reveal that the Tafel reaction shows no reaction barrier. Thereafter, for the Heyrovsky reaction, we obtained a low reaction barrier in the vdW HTSs as compared to that in the BP monolayer. Subsequently, we have observed no significant difference in the reaction profile of MoS2/BP and MoSSe/BP vdW HTSs in the case of 2 × 2 supercell configuration. However, in the case of 3 × 3 and 4 × 4 configurations, MoSSe/BP shows a feasible Heyrovsky reaction with no reaction barrier. The coverages with 1/4H+ concentration (conc.) deduced high coverage with low conc. and low coverage with high conc. to be apt for the HER via the Heyrovsky reaction path. Finally, on observing the activation barrier of the Heyrovsky pathway along with that of second H adsorption at the surface, the Heyrovsky path is expected to be favoured.

Electroluminescence from Megasonically Solution-Processed MoS2 Nanosheet Films

Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.

Lithium-Induced Reorientation of Few-Layer MoS2 Films

Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.

Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities toward developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS₂ memtransistors, which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multilevel memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS₂/dielectric interface. We have proposed a non-volatile memory application using a single Field Effect Transistor (FET) device where thermal energy can be ventured to aid the memory functions with multilevel (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way toward reliable data processing and storage using 2D semiconductors with high-packing density arrays for brain-inspired artificial learning.

Covalently Functionalized MoS2 Initiated Gelation of Hydrogels for Flexible Strain Sensing

Transition metal dichalcogenides (TMDs), with superior mechanical and electrical conductivity, are one of the most promising two-dimensional materials for creating a generation of intelligent and flexible electronic devices. However, due to the high van der Waals and electrostatic attraction, TMD nanomaterials tend to aggregate in dispersants to achieve a stable state, thus severely limiting their further applications. Surface chemical modification is a common strategy for improving the dispersity of TMD nanomaterials; however, there are still constraints such as limited functionalization methods, low grafting rate, and difficult practice application. Thus, it is challenging to develop innovative surface modification systems. Herein, we covalently modify an olefin molecule on surface-inert MoS₂, and the modified MoS₂ can be used as not only a catalyst for hydrogel polymerization, but also a cross-linker in the hydrogel network. Specifically, allyl is covalently grafted onto chemically exfoliated MoS₂, and this modified MoS₂ can be uniformly dispersed in polar solvents (such as acetone, N,N-dimethylformamide, and ethanol), remaining stable for more than 2 weeks. The allyl-modified MoS₂ can catalyze the polymerization of polyacrylamide hydrogel and then integrate in the network, which increases the tensile strength of the composite hydrogel. The flexible sensor based on the composite hydrogel exhibits an ideal operating range of 600% and a quick response time of 150 ms. At the same time, the flexible device can also track the massive axial stretching movements of human joints, making it a reliable option for the next wave of wearable sensing technology.

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.

Surface Modification of Transition Metal Dichalcogenide Nanosheets for Intrinsically Self-Healing Hydrogels with Enhanced Mechanical Properties

Nanocomposites with enhanced mechanical properties and efficient self-healing characteristics can change how the artificially engineered materials' life cycle is perceived. Improved adhesion of nanomaterials with the host matrix can drastically improve the structural properties and confer the material with repeatable bonding/debonding capabilities. In this work, exfoliated 2H-WS₂ nanosheets are modified using an organic thiol to impart hydrogen bonding sites on the otherwise inert nanosheets by surface functionalization. These modified nanosheets are incorporated within the PVA hydrogel matrix and analyzed for their contribution to the composite's intrinsic self-healing and mechanical strength. The resulting hydrogel forms a highly flexible macrostructure with an impressive enhancement in mechanical properties and a very high autonomous healing efficiency of 89.92%. Interesting changes in the surface properties after functionalization show that such modification is highly suitable for water-based polymeric systems. Probing into the healing mechanism using advanced spectroscopic techniques reveals the formation of a stable cyclic structure on the surface of nanosheets, mainly responsible for the improved healing response. This work opens an avenue toward the development of self-healing nanocomposites where chemically inert nanoparticles participate in the healing network rather than just mechanically reinforcing the matrix by slender adhesion.

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS2 Films

Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS₂ and stable hexagonal 2H-MoS₂ phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS₂ films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS₂ films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, Mo_1-xRe_xS₂ films with a 1T-MoS₂ fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS₂ phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2field-effect transistors

The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS₂) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS₂based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS₂. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS₂interface for optimum MoS₂-based device performance. The tunable band-gap of MoS₂with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS₂in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS₂and its effect on structural and electronic properties are extensively discussed.

A Review of Recent Development of Wearable Triboelectric Nanogenerators Aiming at Human Clothing for Energy Conversion

Research in the field of wearable triboelectric generators is increasing, and pioneering research into real applications of this technology is a growing need in both scientific and industry research. In addition to the two key characteristics of wearable triboelectric generators of flexibility and generating friction, features such as softness, breathability, washability, and wear resistance have also attracted a lot of attention from the research community. This paper reviews wearable triboelectric generators that are used in human clothing for energy conversion. The study focuses on analyzing fabric structure and examining the integration method of flexible generators and common fibers/yarns/textiles. Compared to the knitting method, the woven method has fewer restrictions on the flexibility and thickness of the yarn. Remaining challenges and perspectives are also investigated to suggest how to bring fully generated clothing to practical applications in the near future.

Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable Electronics

Two-dimensional (2D) semiconductors are promising for next-generation electronics that are lightweight, flexible, and stretchable. Achieving stretchability with suppressed crack formation, however, is still difficult without introducing lithographically etched micropatterns, which significantly reduces active device areas. Herein, we report a solution-based hierarchical structuring to create stretchable semiconducting films that are continuous over wafer-scale areas via self-assembly of two-dimensional nanosheets. Electrochemically exfoliated MoS₂ nanosheets with large lateral sizes (∼1 μm) are first assembled into a uniform film on a prestrained thermoplastic substrate, followed by strain relief of the substrate to create nanoscale wrinkles. Subsequent strain-relief cycles with the presence of soluble polymer films produce hierarchical wrinkles with multigenerational structures. Stretchable MoS₂ films are then realized by curing an elastomer directly on the wrinkled surface and dissolving the thermoplastic. Three-generation hierarchical MoS₂ wrinkles are resistant to cracking up to nearly 100% substrate stretching and achieve drastically enhanced photoresponsivity compared to the flat counterpart over the visible and NIR regimes, while the flat MoS₂ film is beneficial in creating strain sensors because of its strain-dependent electrical response.

Ligand Exchange on MoS2 Nanosheets: Applications in Array-Based Sensing and Drug Delivery

Two-dimensional MoS2 nanosheets (2D-MoS2) have been widely used in many biological applications due to their distinctive physicochemical properties. Further, the development of surface modification using thiolated ligands allows us to use them for many specific applications. But the effect of possible ligand exchange on 2D-MoS2 has never been explored, which can play an important role in diverse biological applications. In this study, we have observed the ligand-exchange phenomenon on 2D-MoS2 in the presence of different thiolated ligands. The initial study proceeded with boron-dipyrromethene (BODIPY) functionalized MoS2 with different concentrations of glutathione (GSH), which is the most abundant thiol species in the cytoplasm of various cancer cells. It was found that in the presence of GSH the fluorescence of BODIPY can be regenerated, which is time and concentration dependent. We have also examined this phenomenon with different thiol ligands and transition-metal dichalcogenides (TMDs). We observed a variable rate of ligand exchange in different solvents, surface functionality, and receptor environments that helped us to construct sensor arrays. Interestingly, a ligand-exchange process was not observed in the presence of dithiols. Further, this concept was applied to a cancerous cell line for in vitro delivery. We found that BODIPY-functionalized 2D-MoS2 undergoes thiol exchange by intracellular GSH and subsequently enhanced the fluorescence in the cytoplasm of cancer cells. This strategy can be applied to the development of 2D-TMD-based materials for various biological applications related to ligand exchange.

Extreme Bendability of Atomically Thin MoS2 Grown by Chemical Vapor Deposition Assisted by Perylene-Based Promoter

Shaping two-dimensional (2D) materials in arbitrarily complex geometries is a key to designing their unique physical properties in a controlled fashion. This is an elegant solution, taking benefit from the extreme flexibility of the 2D layers but requiring the ability to force their spatial arrangement from flat to curved geometries in a delicate balance among free-energy contributions from strain, slip-and-shear mechanisms, and adhesion to the substrate. Here, we report on a chemical vapor deposition approach, which takes advantage of the surfactant effects of organic molecules, namely the tetrapotassium salt of perylene-3,4,9,10-tetracarboxylic acid (PTAS), to conformally grow atomically thin layers of molybdenum disulphide (MoS₂) on arbitrarily nanopatterned substrates. Using atomically resolved transmission electron microscope images and density functional theory calculations, we show that the most energetically favorable condition for the MoS₂ layers consists of its adaptation to the local curvature of the patterned substrate through a shear-and-slip mechanism rather than strain accumulation. This conclusion also reveals that the perylene-based molecules have a role in promoting the adhesion of the layers onto the substrate, no matter the local-scale geometry.

Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are new crystalline materials with exotic electronic, mechanical, and optical properties. Due to their inherent exceptional mechanical strength, these 2D materials provide us the best platform for strain engineering. In this study, we have performed first-principles calculations to study the effect of uniaxial strains on the electronic, magnetic, and mechanical properties of transition-metal dichalcogenides (TMDs) MX₂ (where M = Cr, Mo, W and X = S, Se), monolayers (2D), and armchair and zigzag nanoribbons (1D). For the mechanical strength, we determined the tensile strength (σ) and Young's modulus (Y) and observed that σ and Y are higher in monolayers (most in WS₂ML) as compared to nanoribbons where monolayers resist tension up to 25-28% strain while nanoribbons (armchair and zigzag) can be only up to 5-10%. Deformation potential (Δ _p ) in the linear regime near the equilibrium position(ϵ < 2%) has also been calculated, and its effect on monolayers is observed less as compared to nanoribbons. In addition, unstrained nonmagnetic monolayers are direct band gap semiconductors (D) which changed to indirect band gap semiconductors (I) with the application of strain. Ferromagnetic states of metallic zigzag nanoribbons (including up spin channel of 7-CrS₂NR and 7-CrSe₂NR) are greatly affected by strain and show half-metal-like behavior in different strain range. The magnetic moment (μ) that is predominantly observed in zigzag nanoribbons is 2 times higher than that of other nanoribbons. This magnetism in nanoribbons is mostly caused by transition-metal atoms (M = Cr, Mo, W). Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.

A Review on Mechanochemistry: Approaching Advanced Energy Materials with Greener Force

Mechanochemistry with solvent-free and environmentally friendly characteristics is one of the most promising alternatives to traditional liquid-phase-based reactions, demonstrating epoch-making significance in the realization of different types of chemistry. Mechanochemistry utilizes mechanical energy to promote physical and chemical transformations to design complex molecules and nanostructured materials, encourage dispersion and recombination of multiphase components, and accelerate reaction rates and efficiencies via highly reactive surfaces. In particular, mechanochemistry deserves special attention because it is capable of endowing energy materials with unique characteristics and properties. Herein, the latest advances and progress in mechanochemistry for the preparation and modification of energy materials are reviewed. An outline of the basic knowledge, methods, and characteristics of different mechanochemical strategies is presented, distinguishing this review from most mechanochemistry reviews that only focus on ball-milling. Next, this outline is followed by a detailed and insightful discussion of mechanochemistry-involved energy conversion and storage applications. The discussion comprehensively covers aspects of energy transformations from mechanical/optical/chemical energy to electrical energy. Finally, next-generation advanced energy materials are proposed. This review is intended to bring mechanochemistry to the frontline and guide this burgeoning field of interdisciplinary research for developing advanced energy materials with greener mechanical force.

First-principles study on the structural properties of 2D MXene SnSiGeN4 and its electronic properties under the effects of strain and an external electric field

The MXene SnSiGeN₄ monolayer as a new member of the MoSi₂N₄ family was proposed for the first time, and its structural and electronic properties were explored by applying first-principles calculations with both PBE and hybrid HSE06 approaches. The layered hexagonal honeycomb structure of SnSiGeN₄ was determined to be stable under dynamical effects or at room temperature of 300 K, with a rather high cohesive energy of 7.0 eV. The layered SnSiGeN₄ has a Young's modulus of 365.699 N m^-1 and a Poisson's ratio of 0.295. The HSE06 approach predicted an indirect band gap of around 2.4 eV for the layered SnSiGeN₄. While the major donation from the N-p orbitals to the band structure makes SnSiGeN₄'s band gap close to those of similar 2D MXenes, the smaller distributions from the other orbitals of Sn, Si, and Ge slightly vary this band gap. The work functions of the GeN and SiN surfaces are 6.367 eV and 5.903 eV, respectively. The band gap of the layered SnSiGeN₄ can be easily tuned by strain and an external electric field. A semiconductor-metal transition can occur at certain values of strain, and with an electric field higher than 5 V nm^-1. The electron mobility of the layered SnSiGeN₄ can reach up to 677.4 cm² V^-1 s^-1, which is much higher than the hole mobility of about 52 cm² V^-1 s^-1. The mentioned characteristics make the layered SnSiGeN₄ a very promising material for use in electronic and photoelectronic devices, and for solar energy conversion.

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS₂ synthesis with commercial showerhead reactors.

Advances in Emerging Photonic Memristive and Memristive-Like Devices

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integration into final devices. Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to deteriorate the 2DMs' properties. Here, t-SPL is used for the fabrication of MoS₂-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS₂ FETs, combining the hot-tip patterning and Ar⁺ milling to etch the 2DM. To avoid contamination of the contact interface by atmospheric gas molecules, etching and metal deposition are performed without breaking the vacuum conditions in between. With this process, edge-contact MoS₂ FETs are successfully fabricated and characterized. On/off ratios up to 10⁸ and 10⁹ are obtained at room temperature in air and vacuum, respectively, i.e., comparable with the best values reported in the literature.

Enhanced Room Temperature Ammonia Gas Sensing Properties of Fe-Doped MoO3 Thin Films Fabricated Using Nebulizer Spray Pyrolysis

MoO₃ thin films are fabricated using nebulizer spray pyrolysis technique, which is doped with Fe at various concentrations of 1, 2, 3, and 4% for ammonia gas sensors application at room temperature. X-ray diffraction (XRD) study confirms the growth of the crystal by Fe doping up to 3%, nano rods shape morphology of the thin film samples observed by field emission scanning electron microscope (FESEM), reduction in bandgap is evidenced via UV-VIS spectrophotometer. Gas sensing study is performed using gas analyzing chamber attached with Keithley source meter. Since 3% Fe doped MoO₃ sample displayed nano rods over the film surface which exhibits highest sensitivity of 38,500%, in a short period of raise and decay time 54 and 6 s. Our findings confirms that the 3% Fe doped MoO₃ films suitability for ammonia gas sensing application.

Polyaromatic cores for the exfoliation of popular 2D materials

Two-dimensional (2D) nanomaterials have attracted interest from the scientific community due to their unique properties. The production of these materials has been carried out by diverse methodologies, the liquid phase exfoliation being the most promising one due to its simplicity and potential scalability. The use of several stabilizers allows to obtain dispersions of these 2D nanomaterials in solvents with low boiling points. Herein we describe a general exfoliation method for different 2D materials employing a biphasic water/dichloromethane system and two different (poly)aromatic hydrocarbons (PAHs). This method allows us to obtain dispersions of the exfoliated 2D materials with high concentrations in the organic solvent. Due to the low boiling point of dichloromethane, and therefore its easy removal, the obtained dispersions can be employed as additives for different composites. We corroborate that the exfoliation efficiency is improved due to the π-π and van der Waals interactions between the PAHs and the layers of the 2D materials.

Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages

The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.

Co-deposition of MoS2films by reactive sputtering and formation of tree-like structures

Transition metal dichalcogenides (TMDCs) are versatile layered materials with potential applications ranging from optoelectronic devices to water splitting. Top-down fabrication methods such as exfoliation are not practical for a large-scale production of high-quality devices: a bottom-up approach such as sputtering, a low-temperature deposition method, is more suitable. However, due to its anisotropic nature, the growth mechanism of molybdenum disulfide (MoS2) via sputtering is complex and remains to be investigated in detail. In this paper, we study the growth of MoS2 films co-deposited by using a sulfur (S) hot-lip cell and a molybdenum (Mo) sputtering target via reactive sputtering. The impact of S partial pressure on the structure and morphology of MoS2films was systematically characterized, and it was observed that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure. The growth front of the structures is ascribed to the anisotropic incorporation of adatoms with regards to the orientation of MoS2.

Investigations on Structural, Electronic and Optical Properties of MoS2/CDs Heterostructure via First-Principles Study

Much effort has been made for MoS2/CDs heterostructure application in the field of photocatalysts. However, the impacts of functional groups of CDs on the properties of the heterostructure are ambiguous. Here, the impacts of hydroxyl, carbonyl, and carboxyl groups of CDs on the structural, electronic, and optical properties of MoS2/CDs’ heterostructure were investigated by conducting a first-principles study. The calculated energy band structure and band gap of monolayer MoS2 were consistent with the experimental values. The band gap of MoS2 was obviously decreased after the construction of MoS2/CDs and MoS2/CDs–hydroxyl/carboxyl, thus helping to improve the light adsorption range. However, the band gap of MoS2/CDs–carbonyl was slightly increased compared with that of monolayer MoS2. The CDs with functional groups can spontaneously bind on 2D-MoS2 and form a stable MoS2/CDs heterostructure. It was confirmed that the MoS2/CDs’ heterostructure belongs to the typical type-II band alignment, which contributes to the separation of photogenerated charge and hole. Notably, the carbonyl and carboxyl groups on the CDs obviously reduced the optical absorption intensity of the MoS2/CDs in the ultraviolet region. The hydroxyl groups have little effect on optical absorption intensity. Thus, the CDs with more hydroxyl groups are beneficial to produce a higher photocatalytic performance. This paper reveals the impacts of surface functional groups and provides a promising approach for designing the MoS2/CDs’ heterostructure to enhance the photocatalytic properties.

Size and Shape's Effects on the High-Pressure Behavior of WS2 Nanomaterials

Exploring the behavior of nanocrystals with varying shapes and sizes under high pressure is crucial to understanding the relationship between the morphology and properties of nanomaterials. In this study, we investigated the compression behaviors of WS₂ nanotubes (NT-WS₂) and fullerene-like nanoparticles (IF-WS₂) by in situ high-pressure X-ray diffraction (XRD) and Raman spectroscopy. It was found that the bulk modulus of NT-WS₂ is 81.7 GPa, which is approximately twice as large as that of IF-WS₂ (46.3 GPa). This might be attributed to the fact that IF-WS₂ with larger d-spacing along the c-axis and higher defect density are more compressible under isotropic pressure than NT-WS₂. Thus, the slender NT-WS₂ possess a more stable crystal structure than the IF-WS₂. Our findings reveal that the effects of morphology and size play crucial roles in determining the high-pressure properties of WS₂ nanoparticles, and provide significant insight into the relationship between structure and properties.

RF Sputtered Nb-Doped MoS2 Thin Film for Effective Detection of NO2 Gas Molecules: Theoretical and Experimental Studies

Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS₂ 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS₂ gas sensor synthesized through physical vapor deposition (PVD) toward NO₂ at different temperatures. The electronic states of MoS₂ and Nb-doped MOS₂ monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS₂ and its electronic properties. The Nb-doped MoS₂ showed an ultrafast response and recovery time of t _rec = 30/85 s toward 5 ppm of NO₂ at their optimal operating temperature (100 °C). The experimental results complement the electron difference density functional theory calculation, showing both physisorption and chemisorption of NO₂ gas molecules on niobium substitution doping in MoS₂.

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.

Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2

Two-dimensional molybdenum disulfide (MoS₂) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS₂-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS₂ can be directly produced on Si/SiO₂ at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS₂ domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS₂ photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS₂ for future applications.

Control of the precursor transport through oxygen dosing yields increased MoS₂ coverage and increased connectivity between crystalline MoS₂ domains.

In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy

2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS₂ with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS₂ and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS₂ layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.

Triboelectric Nanogenerators as Active Tactile Stimulators for Multifunctional Sensing and Artificial Synapses

The wearable tactile sensors have attracted great attention in the fields of intelligent robots, healthcare monitors and human-machine interactions. To create active tactile sensors that can directly generate electrical signals in response to stimuli from the surrounding environment is of great significance. Triboelectric nanogenerators (TENGs) have the advantages of high sensitivity, fast response speed and low cost that can convert any type of mechanical motion in the surrounding environment into electrical signals, which provides an effective strategy to design the self-powered active tactile sensors. Here, an overview of the development in TENGs as tactile stimulators for multifunctional sensing and artificial synapses is systematically introduced. Firstly, the applications of TENGs as tactile stimulators in pressure, temperature, proximity sensing, and object recognition are introduced in detail. Then, the research progress of TENGs as tactile stimulators for artificial synapses is emphatically introduced, which is mainly reflected in the electrolyte-gate synaptic transistors, optoelectronic synaptic transistors, floating-gate synaptic transistors, reduced graphene oxides-based artificial synapse, and integrated circuit-based artificial synapse and nervous systems. Finally, the challenges of TENGs as tactile stimulators for multifunctional sensing and artificial synapses in practical applications are summarized, and the future development prospects are expected.

MoS2 stacking matters: 3R polytype significantly outperforms 2H MoS2 for the hydrogen evolution reaction

Transition metal dichalcogenides (TMDs) are an intriguing family of materials with large application potential in a variety of scientific fields ranging from electronics to electrocatalysis. Within this group of materials, MoS₂ has been attracting a lot of scientific attention due to its chemical and physical properties. In this report, we studied the exfoliation of the largely unexplored 3R MoS₂ polytype prepared by high-temperature, high-pressure synthesis. Bulk as well as sodium naphthalenide exfoliated materials were studied in terms of their quality and performance for the hydrogen evolution reaction (HER). The HER performance was benchmarked versus the commonly available 2H polytype. The reported results show that the 3R polytype is more suitable for the conversion of MoS₂ into the metallic 1T phase, which was attributed to surface oxidation occurring in the 2H polytype. Higher content of the 1T phase then resulted in an overall lower overpotential of -0.25 V vs. RHE for the 3R polytype compared with the overpotential of -0.30 V for the 2H polytype. These results show that the 3R polytype might serve as a better starting point for the synthesis of highly active chemically exfoliated MoS₂ catalysts for hydrogen evolution.

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS₂-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS₂, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (R_SB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (R_int) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS₂-metal contact behavior, a high-performance MoS₂ photodetector was developed with a photoresponsivity of 68.8 A W^-1 at quite a low V_ds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS₂-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.