1
|
Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
Collapse
Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| |
Collapse
|
2
|
Chou YC, Lin CY, Castan A, Chen J, Keneipp R, Yasini P, Monos D, Drndić M. Coupled nanopores for single-molecule detection. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01746-7. [PMID: 39143316 DOI: 10.1038/s41565-024-01746-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2022] [Accepted: 07/05/2024] [Indexed: 08/16/2024]
Abstract
Rapid sensing of molecules is increasingly important in many studies and applications, such as DNA sequencing and protein identification. Here, beyond atomically thin 2D nanopores, we conceptualize, simulate and experimentally demonstrate coupled, guiding and reusable bilayer nanopore platforms, enabling advanced ultrafast detection of unmodified molecules. The bottom layer can collimate and decelerate the molecule before it enters the sensing zone, and the top 2D pore (~2 nm) enables position sensing. We varied the number of pores in the bottom layer from one to nine while fixing one 2D pore in the top layer. When the number of pores in the bottom layer is reduced to one, sensing is performed by both layers, and distinct T- and W-shaped translocation signals indicate the precise position of molecules and are sensitive to fragment lengths. This is uniquely enabled by microsecond resolution capabilities and precision nanofabrication. Coupled nanopores represent configurable multifunctional systems with inter- and intralayer structures for improved electromechanical control and prolonged dwell times in a 2D sensing zone.
Collapse
Affiliation(s)
- Yung-Chien Chou
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Chih-Yuan Lin
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Alice Castan
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Joshua Chen
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Rachael Keneipp
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Parisa Yasini
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Dimitri Monos
- Department of Pathology and Laboratory Medicine, Perelman School of Medicine, University of Pennsylvania, Philadelphia, PA, USA
- Department of Pathology and Laboratory Medicine, Children's Hospital of Philadelphia, Philadelphia, PA, USA
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA.
| |
Collapse
|
3
|
Le CT, Lee JH, Hoang NT, Dang DK, Kim J, Jang JI, Seong MJ, Kim YS. Distinct Valley Polarization in Vertical Heterobilayers: Difference between Edge- and Center-Nucleated WS 2/MoS 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39528-39538. [PMID: 39015032 DOI: 10.1021/acsami.4c03379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
Structural imperfections can cause both beneficial and detrimental consequences on the excitonic characteristics of transition metal dichalcogenides (TMDs). Regarding valley selection, structural defects typically promote valley depolarization in monolayer TMDs, but defect healing via an additional growth process can restore valley polarization in vertical heterobilayers (VHs). In this study, we analyzed the valley polarization of center-nucleated and edge-nucleated VHs (WS2/MoS2) grown using a controlled growth process and discovered that defect-related photoluminescence (PL) is strongly suppressed in the center-nucleated VHs due to defect healing. Additionally, we demonstrated that the valley polarization of lower-lying intralayer excitons is more sensitive to the defect density of the sample than to higher-lying intralayer excitons. Despite defect healing in the center-nucleated VHs, the temperature-dependent PL study indicated that valley depolarization of the lower-lying intralayer excitons becomes significant below 100 K because of stronger hybridization of defect states. Also, we conducted a comprehensive study on the excitation intensity dependence to investigate the electron-doping-induced Auger recombination mechanism, which also contributes to valley depolarization of intralayer excitons via regeneration of intervalley trions. Our findings provide valuable insight into the development of VH-based valleytronic devices.
Collapse
Affiliation(s)
- Chinh Tam Le
- Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Je-Ho Lee
- Department of Physics and Center for Berry Curvature-Based New Phenomena, Chung-Ang University, Seoul 06974, South Korea
| | - Nguyen The Hoang
- Department of Physics and Center for Berry Curvature-Based New Phenomena, Chung-Ang University, Seoul 06974, South Korea
| | - Dinh Khoi Dang
- Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
- Faculty of Chemical and Food Technology, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Viet Nam
| | - Jungcheol Kim
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Maeng-Je Seong
- Department of Physics and Center for Berry Curvature-Based New Phenomena, Chung-Ang University, Seoul 06974, South Korea
| | - Yong Soo Kim
- Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| |
Collapse
|
4
|
Rasritat A, Tapakidareekul M, Saego K, Meevasana W, Sangtawesin S. Formation of oxygen protective layer on monolayer MoS 2 via low energy electron irradiation. RSC Adv 2024; 14:21999-22005. [PMID: 38993507 PMCID: PMC11238566 DOI: 10.1039/d4ra03362k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Accepted: 06/27/2024] [Indexed: 07/13/2024] Open
Abstract
Monolayer molybdenum disulfide (MoS2) semiconductors are the new generation of two-dimensional materials that possess several advantages compared to graphene due to their tunable bandgap and high electron mobility. Several approaches have been used to modify their physical properties for optical device applications. Here, we report a facile and non-destructive surface modification method for monolayer MoS2 via electron irradiation at a low, 5 kV accelerating voltage. After electron irradiation, the results of Raman and photoluminescence spectroscopy confirmed that the structure remains unchanged. However, when the modified surface was illuminated with a 532 nm laser for a prolonged period, the PL intensity was quenched as a result of oxygen desorption. Interestingly, the PL intensity can be recovered when left in ambient conditions for 10 h. The analysis of the PL spectrum revealed a decrease of trion, which is consistent with the readsorbed O2 molecules on the surface that deplete electrons and lead to PL recovery. We attribute this effect to the enhancement of the n-type character of monolayer MoS2 after electron irradiation. The sensitive nature of the modified surface to oxygen suggests that this approach may be used as a tool for the fabrication of MoS2 oxygen sensors.
Collapse
Affiliation(s)
- Aissara Rasritat
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | | | - Kritsana Saego
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | - Worawat Meevasana
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | - Sorawis Sangtawesin
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| |
Collapse
|
5
|
Barri N, Rastogi A, Islam MA, Kumral B, Demingos PG, Onodera M, Machida T, Singh CV, Filleter T. Cyclic Wear Reliability of 2D Monolayers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27979-27987. [PMID: 38752682 DOI: 10.1021/acsami.4c04495] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Understanding wear, a critical factor impacting the reliability of mechanical systems, is vital for nano-, meso-, and macroscale applications. Due to the complex nature of nanoscale wear, the behavior of nanomaterials such as two-dimensional materials under cyclic wear and their surface damage mechanism is yet unexplored. In this study, we used atomic force microscopy coupled with molecular dynamic simulations to statistically examine the cyclic wear behavior of monolayer graphene, MoS2, and WSe2. We show that graphene displays exceptional durability and lasts over 3000 cycles at 85% of the applied critical normal load before failure, while MoS2 and WSe2 last only 500 cycles on average. Moreover, graphene undergoes catastrophic failure as a result of stress concentration induced by local out-of-plane deformation. In contrast, MoS2 and WSe2 exhibit intermittent failure, characterized by damage initiation at the edge of the wear track and subsequent propagation throughout the entire contact area. In addition to direct implications for MEMS and NEMS industries, this work can also enable the optimization of the use of 2D materials as lubricant additives on a macroscopic level.
Collapse
Affiliation(s)
- Nima Barri
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Akshat Rastogi
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Md Akibul Islam
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Boran Kumral
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| | - Pedro Guerra Demingos
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Momoko Onodera
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153 8505, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153 8505, Japan
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario, Canada M5S 3E4
| | - Tobin Filleter
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada M5S 3G8
| |
Collapse
|
6
|
Su S, Zhao J, Ly TH. Scanning Probe Microscopies for Characterizations of 2D Materials. SMALL METHODS 2024:e2400211. [PMID: 38766949 DOI: 10.1002/smtd.202400211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 04/12/2024] [Indexed: 05/22/2024]
Abstract
2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.
Collapse
Affiliation(s)
- Shaoqiang Su
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, 999077, China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
| |
Collapse
|
7
|
Celano U, Schmidt D, Beitia C, Orji G, Davydov AV, Obeng Y. Metrology for 2D materials: a perspective review from the international roadmap for devices and systems. NANOSCALE ADVANCES 2024; 6:2260-2269. [PMID: 38694454 PMCID: PMC11059534 DOI: 10.1039/d3na01148h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 03/30/2024] [Indexed: 05/04/2024]
Abstract
The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.
Collapse
Affiliation(s)
- Umberto Celano
- School of Electrical, Computer and Energy Engineering, Arizona State University Tempe AZ 85287 USA
| | | | - Carlos Beitia
- Unity-SC 611 Rue Aristide Berges 38330 Montbonnot-Saint-Martin France
| | - George Orji
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Albert V Davydov
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| | - Yaw Obeng
- National Institute of Standards and Technology 100 Bureau Drive Gaithersburg MD USA
| |
Collapse
|
8
|
Chen Z, Qiu H, Cheng X, Cui J, Jin Z, Tian D, Zhang X, Xu K, Liu R, Niu W, Zhou L, Qiu T, Chen Y, Zhang C, Xi X, Song F, Yu R, Zhai X, Jin B, Zhang R, Wang X. Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe 2 thin films. Nat Commun 2024; 15:2605. [PMID: 38521797 PMCID: PMC10960839 DOI: 10.1038/s41467-024-46821-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 03/12/2024] [Indexed: 03/25/2024] Open
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.
Collapse
Affiliation(s)
- Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Hongsong Qiu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xinjuan Cheng
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Jizhe Cui
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zuanming Jin
- Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China
| | - Da Tian
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Kankan Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China
| | - Tianyu Qiu
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China
| | - Xiaoxiang Xi
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Fengqi Song
- State Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xuechao Zhai
- Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
| | - Biaobing Jin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
- Purple Mountain Laboratories, 211111, Nanjing, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
- Department of Physics, Xiamen University, 361005, Xiamen, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
| |
Collapse
|
9
|
Yang Z, Zhang X, Gao K, Zhang B, Sen FG, Bhowmick S, Zhang J, Alpas AT. Temperature-Dependent Frictional Behavior of MoS 2 in Humid Environments: Insights from Water Molecule Adsorption and DFT Analyses. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38412376 DOI: 10.1021/acsami.3c18533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
This study investigates the temperature-dependent frictional behavior of MoS2 in humid environments within the context of a long-standing debate over increased friction due to oxidation processes or molecular adsorption. By combining sliding friction experiments and density functional theory (DFT)-based first-principles simulations, it aims to clarify the role of water molecule adsorption in influencing frictional properties of MoS2, addressing the challenge of identifying interfacial bonding behavior responsible for friction in such conditions. Sliding experiments revealed that magnetron-sputtered MoS2 exhibits a reduction in the coefficient of friction (COF) with an increase in temperature from 25 to 100 °C under 20 and 40% relative humidity. This change in the COF obeys the Arrhenius law, presenting an energy barrier of 0.165 eV, indicative of the temperature-dependent nature of these frictional changes and suggests a consistent frictional mechanism. DFT simulations showed that H2O molecules are adsorbed at MoS2 vacancy defects with adsorption energies ranging from -0.56 to -0.17 eV, which align with the experimentally determined energy barrier. Adsorptive interactions, particularly the formation of stable H···S interfacial hydrogen bonds at defect sites, increase the interlayer adhesion and impede layer shearing. TEM analysis confirms that although MoS2 layers align parallel to the sliding direction in humid conditions, the COF remains at 0.12, as opposed to approximately 0.02 in dry air. This demonstrates that parallel layer alignment does not notably decrease the COF, underscoring humidity's significant role in MoS2's COF values, a result also supported by the Arrhenius analysis. The reversibility of the physisorption process, demonstrated by the recovery of the COF in high-temperature humid environments, suggests its dynamic nature. This study yields fundamental insights into MoS2 interfaces for environments with variable humidity and temperature, crucial for demanding tribological applications.
Collapse
Affiliation(s)
- Zaixiu Yang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xingkai Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Kaixiong Gao
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Bin Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fatih G Sen
- Novelis Global Research and Technology Center, Kennesaw, Georgia 30144, United States
| | - Sukanta Bhowmick
- Tribology of Materials Research Centre, Department of Mechanical, Automotive & Materials Engineering, University of Windsor, Windsor, Ontario N9B 3P4, Canada
| | - Junyan Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ahmet T Alpas
- Tribology of Materials Research Centre, Department of Mechanical, Automotive & Materials Engineering, University of Windsor, Windsor, Ontario N9B 3P4, Canada
| |
Collapse
|
10
|
Lasseter J, Gellerup S, Ghosh S, Yun SJ, Vasudevan R, Unocic RR, Olunloyo O, Retterer ST, Xiao K, Randolph SJ, Rack PD. Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9144-9154. [PMID: 38346142 DOI: 10.1021/acsami.3c17182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.
Collapse
Affiliation(s)
- John Lasseter
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Spencer Gellerup
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sujoy Ghosh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Olugbenga Olunloyo
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Scott T Retterer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Steven J Randolph
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| |
Collapse
|
11
|
Ozden B, Zhang T, Liu M, Fest A, Pearson DA, Khan E, Uprety S, Razon JE, Cherry J, Fujisawa K, Liu H, Perea-López N, Wang K, Isaacs-Smith T, Park M, Terrones M. Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS 2 and WS 2 via Proton Irradiation. ACS NANO 2023; 17:25101-25117. [PMID: 38052014 DOI: 10.1021/acsnano.3c07752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.
Collapse
Affiliation(s)
- Burcu Ozden
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Tianyi Zhang
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mingzu Liu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Andres Fest
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Daniel A Pearson
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Ethan Khan
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Sunil Uprety
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Jiffer E Razon
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Javari Cherry
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Kazunori Fujisawa
- Water Environment and Civil Engineering, Shinshu University, Matsumoto, Nagano 390-8621, Japan
| | - He Liu
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nestor Perea-López
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16082, United States
| | - Tamara Isaacs-Smith
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Minseo Park
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Mauricio Terrones
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- NSF-IUCRC Center for Atomically Thin 1093 Multifunctional Coatings (ATOMIC), The Pennsylvania State University, University Park, Pennsylvania 16082, United States
| |
Collapse
|
12
|
Xu K, Holbrook M, Holtzman LN, Pasupathy AN, Barmak K, Hone JC, Rosenberger MR. Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials. ACS NANO 2023; 17:24743-24752. [PMID: 38095969 DOI: 10.1021/acsnano.3c05056] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.
Collapse
Affiliation(s)
- Kaikui Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Madisen Holbrook
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Matthew R Rosenberger
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| |
Collapse
|
13
|
de la Asunción-Nadal V, Perales-Rondon JV, Colina A, Jurado-Sánchez B, Escarpa A. Photoactive Au@MoS 2 Micromotors for Dynamic Surface-Enhanced Raman Spectroscopy Sensing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54829-54837. [PMID: 37971838 PMCID: PMC10694815 DOI: 10.1021/acsami.3c12895] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/24/2023] [Accepted: 11/01/2023] [Indexed: 11/19/2023]
Abstract
Photophoretic Au@MoS2 micromotors are used as smart mobile substrates for dynamic surface-enhanced Raman spectroscopy (SERS) sensing. The photophoretic capabilities and swarming-like propulsion of the micromotors allow for their schooling and accumulation in the measuring spot, increasing the density of SERS-active gold nanoparticles for Raman mapping and, simultaneously, the preconcentration of the target analyte. The generation of "hot-microflake spots" directly in the Raman irradiation point results in a 15-18-fold enhancement in the detection of crystal violet without the requirement for additional external sources for propulsion. Moreover, the reproducible collective micromotor motion does not depend on the exact position of the laser spot concerning individual micromotors, which greatly simplifies the experimental setup, avoiding the requirements of sophisticated equipment. The strategy was further applied for the detection of malachite green and paraquat with a good signal enhancement. The new on-the-move-based SERS strategy holds great promise for on-site detection with portable instrumentation in a myriad of environmental monitoring and clinical applications.
Collapse
Affiliation(s)
- Víctor de la Asunción-Nadal
- Department
of Analytical Chemistry, Physical Chemistry, and Chemical Engineering, Universidad de Alcala, Alcala de Henares, E-28802 Madrid, Spain
| | - Juan Victor Perales-Rondon
- Department
of Analytical Chemistry, Physical Chemistry, and Chemical Engineering, Universidad de Alcala, Alcala de Henares, E-28802 Madrid, Spain
- Department
of Chemistry, University of Burgos, Pza. Misael Bañuelos s/n, E-09001 Burgos, Spain
| | - Alvaro Colina
- Department
of Chemistry, University of Burgos, Pza. Misael Bañuelos s/n, E-09001 Burgos, Spain
| | - Beatriz Jurado-Sánchez
- Department
of Analytical Chemistry, Physical Chemistry, and Chemical Engineering, Universidad de Alcala, Alcala de Henares, E-28802 Madrid, Spain
- Chemical
Research Institute “Andres M. del Rio”, Universidad de Alcala, E-28802 Madrid, Spain
| | - Alberto Escarpa
- Department
of Analytical Chemistry, Physical Chemistry, and Chemical Engineering, Universidad de Alcala, Alcala de Henares, E-28802 Madrid, Spain
- Chemical
Research Institute “Andres M. del Rio”, Universidad de Alcala, E-28802 Madrid, Spain
| |
Collapse
|
14
|
Cheon CY, Sun Z, Cao J, Gonzalez Marin JF, Tripathi M, Watanabe K, Taniguchi T, Luisier M, Kis A. Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material. NPJ 2D MATERIALS AND APPLICATIONS 2023; 7:74. [PMID: 38665484 PMCID: PMC11041738 DOI: 10.1038/s41699-023-00435-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Accepted: 10/17/2023] [Indexed: 04/28/2024]
Abstract
Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley-Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.
Collapse
Affiliation(s)
- Cheol-Yeon Cheon
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Zhe Sun
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Jiang Cao
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Juan Francisco Gonzalez Marin
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Mathieu Luisier
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| |
Collapse
|
15
|
Lobo K, Gangaiah VK, Alex C, John NS, Ramakrishna Matte HSS. Spontaneous Decoration of Ultrasmall Pt Nanoparticles on Size-Separated MoS 2 Nanosheets. Chemistry 2023; 29:e202301596. [PMID: 37497808 DOI: 10.1002/chem.202301596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 07/23/2023] [Accepted: 07/23/2023] [Indexed: 07/28/2023]
Abstract
Liquid exfoliation can be considered as a viable approach for the scalable production of 2D materials due to its various benefits, although the polydispersity in the obtained nanosheet size hinders their straightforward incorporation. Size-separation can help alleviate these concerns, however a correlation between nanosheet size and property needs to be established to bring about size-specific applicability. Herein, size-selected aqueous nanosheet dispersions have been obtained via centrifugation-based protocols, and their chemical activity in the spontaneous reduction of chloroplatinic acid is investigated. Growth of ultrasmall Pt nanoparticles was achieved on nanosheet surfaces without a need for reducing agents, and stark differences in the nanoparticle coverage were observed as a function of nanosheet size. Defects in the nanosheets were probed via Raman spectroscopy, and correlated to the observed size-activity. Additionally, the effect of reaction temperature during synthesis was investigated. The electrochemical activity of the ultrasmall Pt nanoparticle decorated MoS2 nanosheets was evaluated for the hydrogen evolution reaction, and enhancement in performance was observed with nanosheet size, and nanoparticle decoration density. These findings shine light on the significance of nanosheet size in controlling spontaneous reduction reactions, and provide a deeper insight to intrinsic properties of liquid exfoliated nanosheets.
Collapse
Affiliation(s)
- Kenneth Lobo
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Manipal Academy of Higher Education, Manipal, 576 104, India
| | - Vijaya Kumar Gangaiah
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - Chandraraj Alex
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - Neena S John
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - H S S Ramakrishna Matte
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| |
Collapse
|
16
|
Romanov RI, Zabrosaev IV, Chouprik AA, Yakubovsky DI, Tatmyshevskiy MK, Volkov VS, Markeev AM. Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS 2 Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2712. [PMID: 37836353 PMCID: PMC10574732 DOI: 10.3390/nano13192712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Revised: 09/25/2023] [Accepted: 09/29/2023] [Indexed: 10/15/2023]
Abstract
Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.
Collapse
Affiliation(s)
- Roman I. Romanov
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Ivan V. Zabrosaev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Anastasia A. Chouprik
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| | - Dmitry I. Yakubovsky
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia; (D.I.Y.); (M.K.T.); (V.S.V.)
| | - Andrey M. Markeev
- Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia; (R.I.R.); (I.V.Z.); (A.A.C.)
| |
Collapse
|
17
|
Long F, Ghorbani-Asl M, Mosina K, Li Y, Lin K, Ganss F, Hübner R, Sofer Z, Dirnberger F, Kamra A, Krasheninnikov AV, Prucnal S, Helm M, Zhou S. Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions. NANO LETTERS 2023; 23:8468-8473. [PMID: 37669544 PMCID: PMC10540254 DOI: 10.1021/acs.nanolett.3c01920] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 08/31/2023] [Indexed: 09/07/2023]
Abstract
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.
Collapse
Affiliation(s)
- Fangchao Long
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Yi Li
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Kaiman Lin
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, Shanghai, 200240, China
| | - Fabian Ganss
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - René Hübner
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence
ct.qmat, Technische Universität Dresden, 01069 Dresden, Germany
| | - Akashdeep Kamra
- Condensed
Matter Physics Center (IFIMAC) and Departamento de Física Teórica
de la Materia Condensada, Universidad Autónoma
de Madrid, Ciudad Universitaria
de Cantoblanco, 28049, Madrid, Spain
| | - Arkady V. Krasheninnikov
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Slawomir Prucnal
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| |
Collapse
|
18
|
Kim J, Im C, Lee C, Hwang J, Jang H, Lee JH, Jin M, Lee H, Kim J, Sung J, Kim YS, Lee E. Solvent-assisted sulfur vacancy engineering method in MoS 2 for a neuromorphic synaptic memristor. NANOSCALE HORIZONS 2023; 8:1417-1427. [PMID: 37538027 DOI: 10.1039/d3nh00201b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.
Collapse
Affiliation(s)
- Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
| | - Changik Im
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Chan Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jinwoo Hwang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Jae Hak Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Minho Jin
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Haeyeon Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junyoung Kim
- Inspection Business Unit (IBU), Onto Innovation, 4900 W 78th St, Bloomington, MN 55435, USA
| | - Junho Sung
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Youn Sang Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Advanced Institutes of Convergence Technology, Gwanggyo-ro 145, Yeongtong-gu, Suwon, 16229, Republic of Korea
| | - Eunho Lee
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| |
Collapse
|
19
|
Han B, Gali SM, Dai S, Beljonne D, Samorì P. Isomer Discrimination via Defect Engineering in Monolayer MoS 2. ACS NANO 2023; 17:17956-17965. [PMID: 37704191 DOI: 10.1021/acsnano.3c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.
Collapse
Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
| | - Sai Manoj Gali
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Shuting Dai
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - David Beljonne
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
| |
Collapse
|
20
|
Shendokar S, Aryeetey F, Hossen MF, Ignatova T, Aravamudhan S. Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide. MICROMACHINES 2023; 14:1758. [PMID: 37763921 PMCID: PMC10537635 DOI: 10.3390/mi14091758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 09/05/2023] [Accepted: 09/06/2023] [Indexed: 09/29/2023]
Abstract
Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.
Collapse
Affiliation(s)
- Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Frederick Aryeetey
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| | - Tetyana Ignatova
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoscience, University of North Carolina at Greensboro, 1400 Spring Garden St., Greensboro, NC 27412, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA; (S.S.); (M.F.H.); (T.I.)
- Faculty of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA;
| |
Collapse
|
21
|
Chavda CP, Srivastava A, Vaughan E, Wang J, Gartia MR, Veronis G. Effect of gamma irradiation on the physical properties of MoS 2 monolayer. Phys Chem Chem Phys 2023; 25:22359-22369. [PMID: 37580985 DOI: 10.1039/d3cp02925e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) have been proposed as novel optoelectronic materials for space applications due to their relatively light weight. MoS2 has been shown to have excellent semiconducting and photonic properties. Although the strong interaction of ionizing gamma radiation with bulk materials has been demonstrated, understanding its effect on atomically thin materials has scarcely been investigated. Here, we report the effect of gamma irradiation on the structural and electronic properties of a monolayer of MoS2. We perform Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) studies of MoS2, before and after gamma ray irradiation with varying doses and density functional theory (DFT) calculations. The Raman spectra and XPS results demonstrate that point defects dominate after the gamma irradiation of MoS2. DFT calculations elucidate the electronic properties of MoS2 before and after irradiation. Our work makes several contributions to the field of 2D materials research. First, our study of the electronic density of states and the electronic properties of a MoS2 monolayer irradiated by gamma rays sheds light on the properties of a MoS2 monolayer under gamma irradiation. Second, our study confirms that point defects are formed as a result of gamma irradiation. And third, our DFT calculations qualitatively suggest that the conductivity of the MoS2 monolayer may increase after gamma irradiation due to the creation of additional defect states.
Collapse
Affiliation(s)
- Chintan P Chavda
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Ashok Srivastava
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Erin Vaughan
- United States Airforce Research Laboratory, Albuquerque, NM, USA.
| | - Jianwei Wang
- Department of Geology and Geophysics, Louisiana State University, Baton Rouge, LA, USA.
| | - Manas Ranjan Gartia
- Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Georgios Veronis
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
- Center for Computation and Technology, Louisiana State University, Baton Rouge, LA, USA.
| |
Collapse
|
22
|
Gao L, Zhang X, Yu H, Hong M, Wei X, Chen Z, Zhang Q, Liao Q, Zhang Z, Zhang Y. Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38603-38611. [PMID: 37542456 DOI: 10.1021/acsami.3c07806] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2023]
Abstract
Two-dimensional (2D) MoS2 is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (VS). Evaluating the impact of vacancy defects on the service reliability of MoS2 transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS2 and their influence on the reliability of transistors. The results indicate that VS below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of VS tend to enrich in pairs and over 3.5% of the enriched VS easily evolve into nanopores. The enriched VS with electron doping in the channel cause the threshold voltage (Vth) negative drift approaching 6 V, while the expanded nanopores initiate the Vth roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain VS enrichment, and reliable MoS2 transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.
Collapse
Affiliation(s)
- Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhangyi Chen
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Qinghua Zhang
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| |
Collapse
|
23
|
Jiménez-Arévalo N, Al Shuhaib JH, Pacheco RB, Marchiani D, Saad Abdelnabi MM, Frisenda R, Sbroscia M, Betti MG, Mariani C, Manzanares-Negro Y, Navarro CG, Martínez-Galera AJ, Ares JR, Ferrer IJ, Leardini F. MoS 2 Photoelectrodes for Hydrogen Production: Tuning the S-Vacancy Content in Highly Homogeneous Ultrathin Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2023; 15:33514-33524. [PMID: 37406352 PMCID: PMC10865293 DOI: 10.1021/acsami.3c02192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 06/14/2023] [Indexed: 07/07/2023]
Abstract
Tuning the electrocatalytic properties of MoS2 layers can be achieved through different paths, such as reducing their thickness, creating edges in the MoS2 flakes, and introducing S-vacancies. We combine these three approaches by growing MoS2 electrodes by using a special salt-assisted chemical vapor deposition (CVD) method. This procedure allows the growth of ultrathin MoS2 nanocrystals (1-3 layers thick and a few nanometers wide), as evidenced by atomic force microscopy and scanning tunneling microscopy. This morphology of the MoS2 layers at the nanoscale induces some specific features in the Raman and photoluminescence spectra compared to exfoliated or microcrystalline MoS2 layers. Moreover, the S-vacancy content in the layers can be tuned during CVD growth by using Ar/H2 mixtures as a carrier gas. Detailed optical microtransmittance and microreflectance spectroscopies, micro-Raman, and X-ray photoelectron spectroscopy measurements with sub-millimeter spatial resolution show that the obtained samples present an excellent homogeneity over areas in the cm2 range. The electrochemical and photoelectrochemical properties of these MoS2 layers were investigated using electrodes with relatively large areas (0.8 cm2). The prepared MoS2 cathodes show outstanding Faradaic efficiencies as well as long-term stability in acidic solutions. In addition, we demonstrate that there is an optimal number of S-vacancies to improve the electrochemical and photoelectrochemical performances of MoS2.
Collapse
Affiliation(s)
- Nuria Jiménez-Arévalo
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | - Jinan H. Al Shuhaib
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | | | - Dario Marchiani
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Mahmoud M. Saad Abdelnabi
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
- Physics
Department, Faculty of Science, Ain Shams
University, 11566 Cairo, Egypt
| | - Riccardo Frisenda
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Marco Sbroscia
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | | | - Carlo Mariani
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Yolanda Manzanares-Negro
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Cristina Gómez Navarro
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - Antonio J. Martínez-Galera
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - José Ramón Ares
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | - Isabel J. Ferrer
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - Fabrice Leardini
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| |
Collapse
|
24
|
Cheng Y, Li Z, Tang T, Wang X, Hu X, Xu K, Hung Chu M, Hoa ND, Xie H, Yu H, Chen H, Ou JZ. 3D self-assembled indium sulfide nanoreactor for in-situ surface covalent functionalization: Towards high-performance room-temperature NO 2 sensing. J Colloid Interface Sci 2023; 645:86-95. [PMID: 37146382 DOI: 10.1016/j.jcis.2023.04.157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Revised: 04/20/2023] [Accepted: 04/28/2023] [Indexed: 05/07/2023]
Abstract
Thiol functionalization of two-dimensional (2D) metal sulfides has been demonstrated as an effective approach to enhance the sensing performances. However, most thiol functionalization is realized by multiple-step approaches in liquid medium and depends on the dispersity of 2D materials. Here, we utilize a three-dimensional (3D) In2S3 nano-porous structure that self-assembled from 2D components as the nanoreactor, in which the surface-absorbed thiol molecules from the chemical residues of the nanoreactor are used for the in-situ covalent functionalization. Such functionalization is realized by facile heat the nanoreactor at 100 °C, leading to the recombing sulfur vacancies with thiol-terminated groups. The NO2 sensing performances of such functionalized nanoreactor are investigated at room temperature, in which In2S3-100 exhibits a response magnitude of 21.5 towards 10 ppm NO2 with full reversibility, high selectivity, and excellent repeatability. Such high-performance gas sensors can be attributed to the additional electrons that transferring from the functional group into the host, thus significantly modifying the electronic band structure. This work provides a guideline for the facile in-situ functionalization of metal sulfides and an efficient strategy for the high performances gas sensors without external stimulus.
Collapse
Affiliation(s)
- Yinfen Cheng
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Zhong Li
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China; Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing Institute of Technology, Nanjing 211167, China.
| | - Tao Tang
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Xuanxing Wang
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Xinyi Hu
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Kai Xu
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Manh Hung Chu
- International Training Institute for Materials Science, Hanoi University of Science and Technology, Hanoi 10000, Viet Nam
| | - Nguyen Duc Hoa
- International Training Institute for Materials Science, Hanoi University of Science and Technology, Hanoi 10000, Viet Nam
| | - Huaguang Xie
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Hao Yu
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Hui Chen
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China; School of Engineering, RMIT University, Melbourne 3000, Australia.
| |
Collapse
|
25
|
Anbalagan AK, Hu FC, Chan WK, Gandhi AC, Gupta S, Chaudhary M, Chuang KW, Ramesh AK, Billo T, Sabbah A, Chiang CY, Tseng YC, Chueh YL, Wu SY, Tai NH, Chen HYT, Lee CH. Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS 2 Sputtered Few-Layered Thin Films. ACS NANO 2023; 17:6555-6564. [PMID: 36951422 DOI: 10.1021/acsnano.2c11955] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.
Collapse
Affiliation(s)
- Aswin Kumar Anbalagan
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Fang-Chi Hu
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Weng Kent Chan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shivam Gupta
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mayur Chaudhary
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wei Chuang
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Akhil K Ramesh
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Tadesse Billo
- European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38000, France
| | - Amr Sabbah
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Ching-Yu Chiang
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Yuan-Chieh Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
| | - Nyan-Hwa Tai
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hsin-Yi Tiffany Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| |
Collapse
|
26
|
Symonowicz J, Polyushkin D, Mueller T, Di Martino G. Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS 2 Nanodevices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209968. [PMID: 36539947 DOI: 10.1002/adma.202209968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 12/04/2022] [Indexed: 06/17/2023]
Abstract
MoS2 nanoswitches have shown superb ultralow switching energies without excessive leakage currents. However, the debate about the origin and volatility of electrical switching is unresolved due to the lack of adequate nanoimaging of devices in operando. Here, three optical techniques are combined to perform the first noninvasive in situ characterization of nanosized MoS2 devices. This study reveals volatile threshold resistive switching due to the intercalation of metallic atoms from electrodes directly between Mo and S atoms, without the assistance of sulfur vacancies. A "semi-memristive" effect driven by an organic adlayer adjacent to MoS2 is observed, which suggests that nonvolatility can be achieved by careful interface engineering. These findings provide a crucial understanding of nanoprocess in vertically biased MoS2 nanosheets, which opens new routes to conscious engineering and optimization of 2D electronics.
Collapse
Affiliation(s)
- Joanna Symonowicz
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
| | - Dmitry Polyushkin
- Vienna University of Technology, Institute of Photonics, Gusshausstrasse 27-29 / 387, Vienna, 1040, Austria
| | - Thomas Mueller
- Vienna University of Technology, Institute of Photonics, Gusshausstrasse 27-29 / 387, Vienna, 1040, Austria
| | - Giuliana Di Martino
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
| |
Collapse
|
27
|
Yu S, Cai Z, Sun D, Wu YN, Chen S. Defect Mo S Misidentified as Mo S2 in Monolayer MoS 2 by Scanning Transmission Electron Microscopy: A First-Principles Prediction. J Phys Chem Lett 2023; 14:1840-1847. [PMID: 36779693 DOI: 10.1021/acs.jpclett.3c00032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The defect types in layered semiconductors can be identified by matching the scanning transmission electron microscopy (STEM) images with the structures from first-principles simulations. In a PVD-grown MoS2 monolayer, the MoS2 antisite (one Mo replaces two S) is recognized as being dominant, because its calculated structure matches the distortive structure in STEM images. Therefore, MoS2 has received much attention in MoS2-related defect engineering. We reveal that MoS (one Mo replaces one S) may be mistaken for MoS2, because ionized MoS also has similar structural distortion and can easily be ionized under electron irradiation. Unfortunately, the radiation-induced ionization and associated structural distortion of MoS were overlooked in previous studies. Because the formation energy of MoS is much lower than that of MoS2, it is more likely to exist as the dominant defect in MoS2. Our results highlight the necessity of considering the defect ionization and associated structural distortion in STEM identification of defects in layered semiconductors.
Collapse
Affiliation(s)
- Song Yu
- School of Physics and Electronic Sciences, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241, China
| | - Zenghua Cai
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Deyan Sun
- School of Physics and Electronic Sciences, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241, China
| | - Yu-Ning Wu
- School of Physics and Electronic Sciences, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241, China
| | - Shiyou Chen
- School of Physics and Electronic Sciences, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| |
Collapse
|
28
|
Grünleitner T, Henning A, Bissolo M, Zengerle M, Gregoratti L, Amati M, Zeller P, Eichhorn J, Stier AV, Holleitner AW, Finley JJ, Sharp ID. Real-Time Investigation of Sulfur Vacancy Generation and Passivation in Monolayer Molybdenum Disulfide via in situ X-ray Photoelectron Spectromicroscopy. ACS NANO 2022; 16:20364-20375. [PMID: 36516326 DOI: 10.1021/acsnano.2c06317] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding the chemical and electronic properties of point defects in two-dimensional materials, as well as their generation and passivation, is essential for the development of functional systems, spanning from next-generation optoelectronic devices to advanced catalysis. Here, we use synchrotron-based X-ray photoelectron spectroscopy (XPS) with submicron spatial resolution to create sulfur vacancies (SVs) in monolayer MoS2 and monitor their chemical and electronic properties in situ during the defect creation process. X-ray irradiation leads to the emergence of a distinct Mo 3d spectral feature associated with undercoordinated Mo atoms. Real-time analysis of the evolution of this feature, along with the decrease of S content, reveals predominant monosulfur vacancy generation at low doses and preferential disulfur vacancy generation at high doses. Formation of these defects leads to a shift of the Fermi level toward the valence band (VB) edge, introduction of electronic states within the VB, and formation of lateral pn junctions. These findings are consistent with theoretical predictions that SVs serve as deep acceptors and are not responsible for the ubiquitous n-type conductivity of MoS2. In addition, we find that these defects are metastable upon short-term exposure to ambient air. By contrast, in situ oxygen exposure during XPS measurements enables passivation of SVs, resulting in partial elimination of undercoordinated Mo sites and reduction of SV-related states near the VB edge. Correlative Raman spectroscopy and photoluminescence measurements confirm our findings of localized SV generation and passivation, thereby demonstrating the connection between chemical, structural, and optoelectronic properties of SVs in MoS2.
Collapse
Affiliation(s)
- Theresa Grünleitner
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Alex Henning
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Michele Bissolo
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Marisa Zengerle
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Luca Gregoratti
- Elettra - Sincrotrone Trieste SCpA, AREA Science Park, Strada Statale 14 km 163.5, 34149, Trieste, Italy
| | - Matteo Amati
- Elettra - Sincrotrone Trieste SCpA, AREA Science Park, Strada Statale 14 km 163.5, 34149, Trieste, Italy
| | - Patrick Zeller
- Elettra - Sincrotrone Trieste SCpA, AREA Science Park, Strada Statale 14 km 163.5, 34149, Trieste, Italy
| | - Johanna Eichhorn
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander W Holleitner
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Ian D Sharp
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| |
Collapse
|
29
|
Chang WH, Lu CI, Yang TH, Yang ST, Simbulan KB, Lin CP, Hsieh SH, Chen JH, Li KS, Chen CH, Hou TH, Lu TH, Lan YW. Defect-engineered room temperature negative differential resistance in monolayer MoS 2 transistors. NANOSCALE HORIZONS 2022; 7:1533-1539. [PMID: 36285561 DOI: 10.1039/d2nh00396a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) have also recently exhibited NDR behavior in several of their heterostructures. However, to observe NDR in the form of monolayer MoS2, theoretical prediction has revealed that the material should be more profoundly affected by sulfur (S) vacancy defects. In this work, monolayer MoS2 FETs with a specific amount of S-vacancy defects are fabricated using three approaches, namely chemical treatment (KOH solution), physical treatment (electron beam bombardment), and as-grown MoS2. Based on systematic studies on the correlation of the S-vacancies with both the device's electron transport characteristics and spectroscopic analysis, the NDR has been clearly observed in the defect-engineered monolayer MoS2 FETs with an S-vacancy (VS) amount of ∼5 ± 0.5%. Consequently, stable NDR behavior can be observed at room temperature, and its peak-to-valley ratio can also be effectively modulated via the gate electric field and light intensity. Through these results, it is envisioned that more electronic applications based on defect-engineered layered TMDs will emerge in the near future.
Collapse
Affiliation(s)
- Wen-Hao Chang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Chun-I Lu
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Tilo H Yang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Shu-Ting Yang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Kristan Bryan Simbulan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
- Department of Mathematics and Physics, University of Santo Tomas, Manila 1008, Philippines
| | - Chih-Pin Lin
- Department of Electronics Engineering & Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | | | - Jyun-Hong Chen
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan
| | - Kai-Shin Li
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Tuo-Hung Hou
- Department of Electronics Engineering & Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Ting-Hua Lu
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| |
Collapse
|
30
|
Chen C, Zhang W, Duan P, Liu W, Shafi M, Hu X, Zhang C, Zhang C, Man B, Liu M. SERS enhancement induced by the Se vacancy defects in ultra-thin hybrid phase SnSe x nanosheets. OPTICS EXPRESS 2022; 30:37795-37814. [PMID: 36258361 DOI: 10.1364/oe.473965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Accepted: 09/16/2022] [Indexed: 06/16/2023]
Abstract
Improving the photo-induced charge transfer (PICT) efficiency by adjusting the energy levels difference between adsorbed probe molecules and substrate materials is a key factor for boosting the surface enhanced Raman scattering (SERS) based on the chemical mechanism (CM). Herein, a new route to improve the SERS activity of two-dimensional (2D) selenium and tin compounds (SnSex, 1 ≤ x ≤ 2) by the hybrid phase materials is researched. The physical properties and the energy band structure of SnSex were analyzed. The enhanced SERS activity of 2D SnSex can be attribute to the coupling of the PICT resonance caused by the defect energy levels induced by Se vacancy and the molecular resonance Raman scattering (RRS). This established a relationship between the physical properties and SERS activity of 2D layered materials. The resonance probe molecule, rhodamine (R6G), which is used to detect the SERS performance of SnSex nanosheets. The enhancement factor (EF) of R6G on the optimized SnSe1.35 nanosheets can be as high as 2.6 × 106, with a detection limit of 10-10 M. The SERS result of the environmental pollution, thiram, shows that the SnSex nanosheets have a practical application in trace SERS detection, without the participation of metal particles. These results demonstrate that, through hybrid phase materials, the SERS sensitivity of 2D layered nanomaterials can be improved. It provides a kind of foreground non-metal SERS substrate in monitoring or detecting and provide a deep insight into the chemical SERS mechanism based on 2D layered materials.
Collapse
|
31
|
Jiang S, Liu F, Ji X, Yu T, Qiao Y, Yang B, Gao M. An in-plane supercapacitor obtained by facile template method with high performance Mn-Co sulfide-based oxide electrode. NANOTECHNOLOGY 2022; 33:485401. [PMID: 35901665 DOI: 10.1088/1361-6528/ac84e2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Accepted: 07/28/2022] [Indexed: 06/15/2023]
Abstract
Designing in-plane supercapacitors with high electrode materials selectivity is an indispensable approach to improve electrochemical performance. In this work, a facile template method was employed to fabricate in-plane supercapacitors. This template method could select any electrochemical active materials as electrode materials of in-plane supercapacitors. Hence, a high electrochemical performance material Mn-Co LDO-2S with optimized metal-sulfur bonds proportion and abundant sulfur vacancies was employed as electrode material of symmetrical in-plane supercapacitor (SPS). SPS exhibits excellent electrochemical performance finally, and has considerable area energy density 55.0μWh cm-2with an area power density of 0.7 mW cm-2. As a result, introducing sulfur atoms and sulfur vacancies are efficient approaches to improve electrode materials' electrochemical performance, and template method that proposed in this work is a promising approach to widen selectivity of in-plane supercapacitors' electrode materials.
Collapse
Affiliation(s)
- Subin Jiang
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Feng Liu
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Xiang Ji
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Tengfei Yu
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Yi Qiao
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Baojuan Yang
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| | - Meizhen Gao
- Key Laboratory for Magnetism and Materials of MOE, School of Materials and Energy, Lanzhou University, 730000 Lanzhou, People's Republic of China
| |
Collapse
|
32
|
Zhang Y, Zhou M, Yang M, Yu J, Li W, Li X, Feng S. Experimental Realization and Computational Investigations of B 2S 2 as a New 2D Material with Potential Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32330-32340. [PMID: 35796513 DOI: 10.1021/acsami.2c03762] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A new two-dimensional material B2S2 has been successfully synthesized for the first time and validated using first-principles calculations, with fundamental properties analyzed in detail. B2S2 has a similar structure as transition-metal dichalcogenides (TMDs) such as MoS2, and the experimentally prepared free-standing B2S2 nanosheets show a uniform height profile lower than 1 nm. A thickness-modulated and unique oxidation-level dependent band gap of B2S2 is revealed by theoretical calculations, and vibration signatures are determined to offer a practical scheme for the characterization of B2S2. It is shown that the functionalized B2S2 is able to provide favorable sites for lithium adsorption with low diffusion barriers, and the prepared B2S2 shows a wide band photoluminescence response. These findings offer a feasible new and lighter member for the TMD-like 2D material family with potential for various aspects of applications, such as an anode material for Li-ion batteries and electronic and optoelectronic devices.
Collapse
Affiliation(s)
- Yibo Zhang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Ming Zhou
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- Key Laboratory of Advanced Materials Processing Technology, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Mingyang Yang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Jianwen Yu
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Wenming Li
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Xuyin Li
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Shijia Feng
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| |
Collapse
|
33
|
Kim HU, Seok H, Kang WS, Kim T. The first progress of plasma-based transition metal dichalcogenide synthesis: a stable 1T phase and promising applications. NANOSCALE ADVANCES 2022; 4:2962-2972. [PMID: 36133517 PMCID: PMC9417878 DOI: 10.1039/d1na00882j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 04/24/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted attention as polymorphs depending on their phases (1T and 2H) when applying typical synthesis methods. The 2H phase is generally synthesised through chemical vapour deposition (CVD) on a wafer-scale at high temperatures, and many synthesis methods have been reported owing to their thermodynamic stability and semiconductor properties. By contrast, although the 1T phase is meta-stable with an octahedral coordination, thereby limiting the use of synthesis methods, the recent structural advantage in terms of the hydrogen evolution reaction (HER) has been emphasised. Despite this demand, no large-area thin-film synthesis method for 1T-TMDs has been developed. Among several strategies of synthesizing metallic-phase (1T) TMDs, chemical exfoliation (alkali metal intercalation) is a major strategy and others have been used for electron-beam irradiation, laser irradiation, defects, plasma hot electron transfer, and mechanical strain. Therefore, we suggest an innovative synthesis method using plasma-enhanced CVD (PECVD) for both the 1T and 2H phases of TMDs (MoS2 and WS2). Because ions and radicals are accelerated to the substrate within the sheath region, a high-temperature source is not needed for vapour ionisation, and thus the process temperature can be significantly lowered (150 °C). Moreover, a 4-inch wafer-scale of a thin film is an advantage and can be synthesised on arbitrary substrates (SiO2/Si wafer, glassy carbon electrode, Teflon, and polyimide). Furthermore, the PECVD method was applied to TMD-graphene heterostructure films with a graphene-transferred substrate, and for the first time, sequential metal seed layer depositions of W (1 nm) and Mo (1 nm) were sulfurized to MoS2-WS2 vertical heterostructures with Ar + H2S plasma. We considered the prospects and challenges of the new PECVD method in the development of practical applications in next-generation integrated electronics, HER catalysts, and flexible biosensors.
Collapse
Affiliation(s)
- Hyeong-U Kim
- Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM) Daejeon 34103 Korea
| | - Hyunho Seok
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University Suwon 16419 Korea
| | - Woo Seok Kang
- Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM) Daejeon 34103 Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University Suwon 16419 Korea
- School of Mechanical Engineering, Sungkyunkwan University Suwon 16419 Korea
| |
Collapse
|
34
|
Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
Collapse
Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| |
Collapse
|
35
|
Hydrodesulfurization on Supported CoMoS2 Catalysts Ex Ammonium Tetrathiomolybdate: Effects of Support Morphology and Al Modification Method. Top Catal 2022. [DOI: 10.1007/s11244-022-01647-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
|
36
|
de Freitas N, Florindo BR, Freitas VMS, Piazzetta MHDO, Ospina CA, Bettini J, Strauss M, Leite ER, Gobbi AL, Lima RS, Santhiago M. Fast and efficient electrochemical thinning of ultra-large supported and free-standing MoS 2 layers on gold surfaces. NANOSCALE 2022; 14:6811-6821. [PMID: 35388391 DOI: 10.1039/d2nr00491g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Molybdenum disulfide (MoS2) is a very promising layered material for electrical, optical, and electrochemical applications because of its unique and outstanding properties. To unlock its full potential, among different preparation routes, electrochemistry has gain interest due to its simple, fast, scalable and simple instrumentation. However, obtaining large-area monolayer MoS2 that will enable the fabrication of novel electronic and electrochemical devices is still challenging. In this work, we reported a simple and fast electrochemical thinning process that results in ultra-large MoS2 down to monolayer on Au surfaces. The high affinity of MoS2 by Au surfaces enables the removal of bulk layers while preserving the first layer attached to the electrode. With a proper choice of the applied potential, more than 90% of the bulk regions can be removed from large-area MoS2 crystals, as confirmed by atomic force microscopy, photoluminescence, and Raman spectroscopy. We further address a set of contributions that are helpful to elucidate the features of MoS2, namely, the hyphenation of electrochemistry and optical microscopy for real-time observation of the thinning process that was revealed to occur from the edges to the center of the flake, an image treatment to estimate the thinning area and thinning rate, and the preparation of free-standing MoS2 layers by electrochemically thinning bulk flakes on microhole-structured Ni/Au meshes.
Collapse
Affiliation(s)
- Nicolli de Freitas
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Bianca R Florindo
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Vitória M S Freitas
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Maria H de O Piazzetta
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Carlos A Ospina
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Jefferson Bettini
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Mathias Strauss
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
| | - Edson R Leite
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- São Carlos Institute of Chemistry, University of São Paulo, São Carlos, São Paulo 09210-580, Brazil
| | - Angelo L Gobbi
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
| | - Renato S Lima
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo 13083-970, Brazil
- São Carlos Institute of Chemistry, University of São Paulo, São Carlos, São Paulo 09210-580, Brazil
| | - Murilo Santhiago
- Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil.
- Federal University of ABC, Santo André, São Paulo 09210-580, Brazil
| |
Collapse
|
37
|
Wang Q, Li X, Ma X, Li Z, Yang Y. Activation of the MoS 2 Basal Plane to Enhance CO Hydrogenation to Methane Activity Through Increasing S Vacancies. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7741-7755. [PMID: 35112567 DOI: 10.1021/acsami.1c18291] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The active site of MoS2 is usually located at the edge of crystalline MoS2, which has a lower proportion than that from the basal plane, limiting the hydrogenation activity. Therefore, activating the basal plane of MoS2 is expected to greatly enhance the hydrogenation activity. Herein, we prepared a series of MoS2 catalysts by acidolysis of ammonium tetrathiomolybdate and subsequently pyrolyzing at high temperature with different atmospheres. Through analysis, we found that the prepared MoS2 catalysts were curved, which was different from commercial MoS2. Through X-ray diffraction, transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy characterization, it was found that the MoS2 catalyst pyrolyzed under a N2 atmosphere had a larger number of S-vacancies than the MoS2 catalysts under a H2 atmosphere. In addition, temperature-programmed reduction results showed that the Mo-S bond energy was decreased with the increasing content of S-vacancies, which might be related to bending. Sulfur-resistant methanation results indicated that the curved MoS2 exhibited increased CO conversion with the increasing S vacancies. Furthermore, density functional theory calculation was used to simulate the generation of S vacancy and numbers of S vacancies. It was found that with the generation of S vacancy, three unsaturated coordination Mo atoms were exposed around one S vacancy and became new active sites, resulting in enhanced activity. What is more, the higher methanation activity was attributed not only from more S vacancies but also from the decreased activation energy for CO hydrogenation activation.
Collapse
Affiliation(s)
- Qiang Wang
- Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, China
| | - Xin Li
- Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, China
| | - Xinbin Ma
- Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, China
| | - Zhenhua Li
- Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, China
| | | |
Collapse
|
38
|
Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
Collapse
Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| |
Collapse
|
39
|
Xin H, Zhang J, Yang C, Chen Y. Direct Detection of Inhomogeneity in CVD-Grown 2D TMD Materials via K-Means Clustering Raman Analysis. NANOMATERIALS 2022; 12:nano12030414. [PMID: 35159759 PMCID: PMC8840665 DOI: 10.3390/nano12030414] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Revised: 12/24/2021] [Accepted: 01/06/2022] [Indexed: 11/16/2022]
Abstract
It is known that complex growth environments often induce inhomogeneity in two-dimensional (2D) materials and significantly restrict their applications. In this paper, we proposed an efficient method to analyze the inhomogeneity of 2D materials by combination of Raman spectroscopy and unsupervised k-means clustering analysis. Taking advantage of k-means analysis, it can provide not only the characteristic Raman spectrum for each cluster but also the cluster spatial maps. It has been demonstrated that inhomogeneities and their spatial distributions are simultaneously revealed in all CVD-grown MoS2, WS2 and WSe2 samples. Uniform p-type doping and varied tensile strain were found in polycrystalline monolayer MoS2 from the grain boundary and edges to the grain center (single crystal). The bilayer MoS2 with AA and AB stacking are shown to have relatively uniform p-doping but a gradual increase of compressive strain from center to the periphery. Irregular distribution of 2LA(M)/E2g1 mode in WS2 and E2g1 mode in WSe2 is revealed due to defect and strain, respectively. All the inhomogeneity could be directly characterized in color-coded Raman imaging with correlated characteristic spectra. Moreover, the influence of strain and doping in the MoS2 can be well decoupled and be spatially verified by correlating with the clustered maps. Our k-means clustering Raman analysis can dramatically simplify the inhomogeneity analysis for large Raman data in 2D materials, paving the way towards direct evaluation for high quality 2D materials.
Collapse
Affiliation(s)
- Hang Xin
- School of Physics & Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China; (H.X.); (C.Y.); (Y.C.)
- Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing 210044, China
- Jiangsu International Joint Laboratory on Meterological Photonics and Optoelectronic Detection, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Jingyun Zhang
- School of Physics & Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China; (H.X.); (C.Y.); (Y.C.)
- Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing 210044, China
- Jiangsu International Joint Laboratory on Meterological Photonics and Optoelectronic Detection, Nanjing University of Information Science & Technology, Nanjing 210044, China
- Correspondence:
| | - Cuihong Yang
- School of Physics & Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China; (H.X.); (C.Y.); (Y.C.)
- Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing 210044, China
- Jiangsu International Joint Laboratory on Meterological Photonics and Optoelectronic Detection, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Yunyun Chen
- School of Physics & Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China; (H.X.); (C.Y.); (Y.C.)
- Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing 210044, China
- Jiangsu International Joint Laboratory on Meterological Photonics and Optoelectronic Detection, Nanjing University of Information Science & Technology, Nanjing 210044, China
| |
Collapse
|
40
|
Jadwiszczak J, Sherman J, Lynall D, Liu Y, Penkov B, Young E, Keneipp R, Drndić M, Hone JC, Shepard KL. Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit. ACS NANO 2022; 16:1639-1648. [PMID: 35014261 PMCID: PMC9526797 DOI: 10.1021/acsnano.1c10524] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p-n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III-V semiconductors.
Collapse
Affiliation(s)
- Jakub Jadwiszczak
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Jeffrey Sherman
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - David Lynall
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Yang Liu
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Boyan Penkov
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Erik Young
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Rachael Keneipp
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Kenneth L Shepard
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
- Department of Biomedical Engineering, Columbia University, 1210 Amsterdam Avenue, New York, New York 10027, United States
| |
Collapse
|
41
|
Lee Y, Chang S, Chen S, Chen S, Chen H. Optical Inspection of 2D Materials: From Mechanical Exfoliation to Wafer-Scale Growth and Beyond. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102128. [PMID: 34716758 PMCID: PMC8728831 DOI: 10.1002/advs.202102128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Revised: 07/13/2021] [Indexed: 05/11/2023]
Abstract
Optical inspection is a rapid and non-destructive method for characterizing the properties of two-dimensional (2D) materials. With the aid of optical inspection, in situ and scalable monitoring of the properties of 2D materials can be implemented industrially to advance the development and progress of 2D material-based devices toward mass production. This review discusses the optical inspection techniques that are available to characterize various 2D materials, including graphene, transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), group-III monochalcogenides, black phosphorus (BP), and group-IV monochalcogenides. First, the authors provide an introduction to these 2D materials and the processes commonly used for their fabrication. Then they review several of the important structural properties of 2D materials, and discuss how to characterize them using appropriate optical inspection tools. The authors also describe the challenges and opportunities faced when applying optical inspection to recently developed 2D materials, from mechanically exfoliated to wafer-scale-grown 2D materials. Most importantly, the authors summarize the techniques available for largely and precisely enhancing the optical signals from 2D materials. This comprehensive review of the current status and perspective of future trends for optical inspection of the structural properties of 2D materials will facilitate the development of next-generation 2D material-based devices.
Collapse
Affiliation(s)
- Yang‐Chun Lee
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Sih‐Wei Chang
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Shu‐Hsien Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Shau‐Liang Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| | - Hsuen‐Li Chen
- Department of Materials Science and EngineeringNational Taiwan UniversityNo. 1, Sec. 4, Roosevelt RoadTaipei10617Taiwan
| |
Collapse
|
42
|
Zhang Y, Liu T, Jia H, Xia Q, Hong X, Liu G. Brønsted acid-enhanced CoMoS catalysts for hydrodeoxygenation reactions. Catal Sci Technol 2022. [DOI: 10.1039/d2cy00541g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Brønsted solid acids greatly promote the hydrodeoxygenation activity of CoMoS catalysts through weakening Car–O bonds by protonation of the OH group.
Collapse
Affiliation(s)
- Yijin Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, PR China
| | - Tangkang Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, PR China
| | - Hongyan Jia
- College of Biological, Chemical Science and Engineering, Jiaxing University, Jiaxing 314001, PR China
| | - Qineng Xia
- College of Biological, Chemical Science and Engineering, Jiaxing University, Jiaxing 314001, PR China
| | - Xinlin Hong
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, PR China
| | - Guoliang Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, PR China
| |
Collapse
|
43
|
Han X, Wen P, Zhang L, Gao W, Chen H, Gao F, Zhang S, Huo N, Zou B, Li J. A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe 2/TaIrTe 4/n-MoS 2 van der Waals Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61544-61554. [PMID: 34910468 DOI: 10.1021/acsami.1c19526] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive photodetection is highly appealing considering its great important applications. However, the inherent in-plane symmetry of a material and the single structure of a detector hinder the further development of polarization detectors with high anisotropic ratios. Herein, we design a p-WSe2/TaIrTe4/n-MoS2 (p-Ta-n) heterojunction. As a type-II Weyl semimetal, TaIrTe4 with an orthorhombic structure has strong in-plane asymmetry, which is confirmed by angle-resolved polarized Raman spectroscopy and second-harmonic generation. Due to the specific structure of the p-Ta-n junction with two vertical built-in electric fields, the device obtains a broadband self-powered photodetection ranging from visible (405 nm) to telecommunication wavelength (1550 nm) regions. Further, an optimized device containing 50-70 nm-thick layered TaIrTe4 has been realized. What is more, high-resolution imaging of "T" based on the device with clear borders illustrates excellent stability of the device. Significantly, the photocurrent anisotropic ratio of the p-Ta-n detector can reach 9.1 under 635 nm light, which is more than eight times that of the best known TaIrTe4-based photodetector reported before. This p-Ta-n junction containing a type-II Weyl fermion semimetal can provide an effective approach toward highly polarization-sensitive and high-performance integrated broadband photodetectors.
Collapse
Affiliation(s)
- Xiaoning Han
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Li Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Hongyu Chen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Feng Gao
- School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Shihao Zhang
- Institute of Quantum Computing and Computer Science Theory, School of Computer Science and Engineering, Sun Yat-Sen University, Guangzhou 510006, China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
| | - Bingsuo Zou
- School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Key Lab of Chip and Integration Technology, Guangzhou 51063, P. R. China
| |
Collapse
|
44
|
Wang JJ, Zhao YF, Zheng JD, Wang XT, Deng X, Guan Z, Ma RR, Zhong N, Yue FY, Wei ZM, Xiang PH, Duan CG. Strain-engineering on GeSe: Raman spectroscopy study. Phys Chem Chem Phys 2021; 23:26997-27004. [PMID: 34842874 DOI: 10.1039/d1cp03721h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Among the IV-VI compounds, GeSe has wide applications in nanoelectronics due to its unique photoelectric properties and adjustable band gap. Even though modulation of its physical characteristics, including the band gap, by an external field will be useful for designing novel devices, experimental work is still rare. Here, we report a detailed anisotropic Raman response of GeSe flakes under uniaxial tension strain. Based on theoretical analysis, the anisotropy of the phonon response is attributed to a change in anisotropic bond length and bond angle under in-plane uniaxial strain. An enhancement in anisotropy and band gap is found due to strain along the ZZ or AC directions. This study shows that strain-engineering is an effective method for controlling the GeSe lattice, and paves the way for modulating the anisotropic electric and optical properties of GeSe.
Collapse
Affiliation(s)
- Jin-Jin Wang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Yi-Feng Zhao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Jun-Ding Zheng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Xiao-Ting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Ru-Ru Ma
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. .,State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Fang-Yu Yue
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Zhong-Ming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. .,State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| |
Collapse
|
45
|
Xiong G, Zhu H, Wang L, Fan L, Zheng Z, Li B, Zhao F, Han Z. Radiation damage and abnormal photoluminescence enhancement of multilayer MoS 2under neutron irradiation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055701. [PMID: 34673561 DOI: 10.1088/1361-648x/ac31f8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
In this work, neutron irradiation effects on the optical property of multilayer MoS2have been investigated in depth. Our results display that the intensity of the photoluminescence (PL) spectra of MoS2flakes tends to slightly decrease after exposed to neutron irradiation with low fluence of 4.0 × 108n/cm2. An unexpected improvement of PL intensity, however, is observed when the irradiation fluence accumulates to 3.2 × 109n/cm2. Combined with the experimental results and first-principles calculations, neutron irradiation damage effects of multilayer MoS2are analyzed deeply. Sulfur vacancy (VS) is found to be responsible for the attenuation of the PL intensity as a major defect. In addition, our results reveal that the adsorbed hydroxyl groups (OH) and oxygen atoms (O) on the surface of MoS2flakes not only promote the transition from trion excitons to neutral excitons, but also repair theVSin MoS2, both of which contribute to the enhancement of luminescence properties. The detailed evolution process of irradiation-induced defects is discussed to reveal the microscopic mechanism of the significantly difference in luminescence intensity of MoS2under different irradiation stages. This work has great significance for evaluating the neutron radiation hardness of multilayer MoS2, which is helpful to enrich the fundamental research on neutron irradiation effects.
Collapse
Affiliation(s)
- Guodong Xiong
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Huiping Zhu
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Lei Wang
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Linsheng Fan
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252000, People's Republic of China
| | - Zhongshan Zheng
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Bo Li
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Fazhan Zhao
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Zhengsheng Han
- Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|
46
|
Komen I, van Heijst SE, Conesa-Boj S, Kuipers L. Morphology-induced spectral modification of self-assembled WS 2 pyramids. NANOSCALE ADVANCES 2021; 3:6427-6437. [PMID: 34913025 PMCID: PMC8577507 DOI: 10.1039/d1na00531f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2021] [Accepted: 09/21/2021] [Indexed: 06/14/2023]
Abstract
Due to their intriguing optical properties, including stable and chiral excitons, two-dimensional transition metal dichalcogenides (2D-TMDs) hold the promise of applications in nanophotonics. Chemical vapor deposition (CVD) techniques offer a platform to fabricate and design nanostructures with diverse geometries. However, the more exotic the grown nanogeometry, the less is known about its optical response. WS2 nanostructures with geometries ranging from monolayers to hollow pyramids have been created. The hollow pyramids exhibit a strongly reduced photoluminescence with respect to horizontally layered tungsten disulphide, facilitating the study of their clear Raman signal in more detail. Excited resonantly, the hollow pyramids exhibit a great number of higher-order phononic resonances. In contrast to monolayers, the spectral features of the optical response of the pyramids are position dependent. Differences in peak intensity, peak ratio and spectral peak positions reveal local variations in the atomic arrangement of the hollow pyramid crater and sides. The position-dependent optical response of hollow WS2 pyramids is characterized and attributed to growth-induced nanogeometry. Thereby the first steps are taken towards producing tunable nanophotonic devices with applications ranging from opto-electronics to non-linear optics.
Collapse
Affiliation(s)
- Irina Komen
- Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology The Netherlands
| | - Sabrya E van Heijst
- Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology The Netherlands
| | - Sonia Conesa-Boj
- Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology The Netherlands
| | - L Kuipers
- Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology The Netherlands
| |
Collapse
|
47
|
Choi HK, Cha J, Choi CG, Kim J, Hong S. Effect of Point Defects on Electronic Structure of Monolayer GeS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2960. [PMID: 34835724 PMCID: PMC8618743 DOI: 10.3390/nano11112960] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Revised: 10/23/2021] [Accepted: 10/23/2021] [Indexed: 11/16/2022]
Abstract
Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was found that the bandgap of GeS with substitutional atoms is close to that of pristine GeS, while the bandgap of GeS with Ge or S vacancies was smaller than that of pristine GeS. In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Defects affect the piezoelectric properties depending on vacancies or substitutional atoms. Especially, GeS with substitutional atoms has almost the same piezoelectric stress coefficients eij as pristine GeS while having lower piezoelectric strain coefficients dij but still much higher than other 2D materials. It is therefore concluded that Sn can effectively heal Ge vacancy in GeS, keeping high piezoelectric strain coefficients.
Collapse
Affiliation(s)
| | | | | | | | - Suklyun Hong
- Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea; (H.-K.C.); (J.C.); (C.-G.C.); (J.K.)
| |
Collapse
|
48
|
Zhao H, Li M, Fang Z, Su Q. A novel type of alkaline water-based derivative rechargeable bromine-based battery with the two-dimensional material MoS2 nano-flowers. INORG CHEM COMMUN 2021. [DOI: 10.1016/j.inoche.2021.108873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
|
49
|
Zhang K, Guo Y, Larson DT, Zhu Z, Fang S, Kaxiras E, Kong J, Huang S. Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS 2 Heterostructures. ACS NANO 2021; 15:14394-14403. [PMID: 34463476 DOI: 10.1021/acsnano.1c03779] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of photoluminescence (PL) quenching of MoS2 A exciton, suggesting enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.
Collapse
Affiliation(s)
- Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yunfan Guo
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Daniel T Larson
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Ziyan Zhu
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Shiang Fang
- Department of Physics and Astronomy, Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, United States
| | - Efthimios Kaxiras
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| |
Collapse
|
50
|
Xu X, Liu L. MoS 2 with Controlled Thickness for Electrocatalytic Hydrogen Evolution. NANOSCALE RESEARCH LETTERS 2021; 16:137. [PMID: 34463831 PMCID: PMC8408302 DOI: 10.1186/s11671-021-03596-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/01/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
Molybdenum disulfide (MoS2) has moderate hydrogen adsorption free energy, making it an excellent alternative to replace noble metals as hydrogen evolution reaction (HER) catalysts. The thickness of MoS2 can affect its energy band structure and interface engineering, which are the avenue way to adjust HER performance. In this work, MoS2 films with different thicknesses were directly grown on the glassy carbon (GC) substrate by atomic layer deposition (ALD). The thickness of the MoS2 films can be precisely controlled by regulating the number of ALD cycles. The prepared MoS2/GC was directly used as the HER catalyst without a binder. The experimental results show that MoS2 with 200-ALD cycles (the thickness of 14.9 nm) has the best HER performance. Excessive thickness of MoS2 films not only lead to the aggregation of dense MoS2 nanosheets, resulting in reduction of active sites, but also lead to the increase of electrical resistance, reducing the electron transfer rate. MoS2 grown layer by layer on the substrate by ALD technology also significantly improves the bonding force between MoS2 and the substrate, showing excellent HER stability.
Collapse
Affiliation(s)
- Xiaoxuan Xu
- Nanjing Vocational University of Industry Technology , Nanjing, 210023, People's Republic of China
| | - Lei Liu
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, People's Republic of China.
| |
Collapse
|