1
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Zhang Z, Hoang L, Hocking M, Peng Z, Hu J, Zaborski G, Reddy PD, Dollard J, Goldhaber-Gordon D, Heinz TF, Pop E, Mannix AJ. Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition. ACS NANO 2024. [PMID: 39230253 DOI: 10.1021/acsnano.4c02164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Lauren Hoang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Gregory Zaborski
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Pooja D Reddy
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Johnny Dollard
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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2
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Xiao J, He M, Zhan B, Guo H, Yang JL, Zhang Y, Qi X, Gu J. Multifunctional microwave absorption materials: construction strategies and functional applications. MATERIALS HORIZONS 2024. [PMID: 39229798 DOI: 10.1039/d4mh00793j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
The widespread adoption of wireless communication technology, especially with the introduction of artificial intelligence and the Internet of Things, has greatly improved our quality of life. However, this progress has led to increased electromagnetic (EM) interference and pollution issues. The development of advanced microwave absorbing materials (MAMs) is one of the most feasible solutions to solve these problems, and has therefore received widespread attention. However, MAMs still face many limitations in practical applications and are not yet widely used. This paper presents a comprehensive review of the current status and future prospects of MAMs, and identifies the various challenges from practical application scenarios. Furthermore, strategies and principles for the construction of multifunctional MAMs are discussed in order to address the possible problems that are faced. This article also presents the potential applications of MAMs in other fields including environmental science, energy conversion, and medicine. Finally, an analysis of the potential outcomes and future challenges of multifunctional MAMs are presented.
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Affiliation(s)
- Junxiong Xiao
- College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University, Guiyang City 550025, People's Republic of China.
| | - Mukun He
- Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, People's Republic of China.
| | - Beibei Zhan
- College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University, Guiyang City 550025, People's Republic of China.
| | - Hua Guo
- Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, People's Republic of China.
| | - Jing-Liang Yang
- College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University, Guiyang City 550025, People's Republic of China.
| | - Yali Zhang
- Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, People's Republic of China.
| | - Xiaosi Qi
- College of Physics, Guizhou Province Key Laboratory for Photoelectrics Technology and Application, Guizhou University, Guiyang City 550025, People's Republic of China.
| | - Junwei Gu
- Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, People's Republic of China.
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3
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Kong L, Liu H, Wang X, Abbas A, Tang L, Han M, Li W, Lu Z, Lu D, Ma X, Liu Y, Liang Q. Precisely Tailoring WSe 2 Polarity via van der Waals Bismuth-Gold Modulated Contact. NANO LETTERS 2024; 24:10949-10956. [PMID: 39186014 DOI: 10.1021/acs.nanolett.4c02848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/27/2024]
Abstract
Creating high-quality contacts between high-melting-point metals and delicate two-dimensional (2D) semiconductors poses a critical challenge to polarity control due to inevitable chemical disorder and Fermi-level pinning observed in the contact regions. Here, we report a van der Waals (vdW) integration strategy to precisely tailor the WSe2 polarity by meticulously modulating metal contact compositions. Controlling the low-melting-point bismuth (Bi) thickness effectively modulates the Bi/Au dominant contact with WSe2. This facilitates the precise polarity transformation between n-type, ambipolar, and p-type, with exceptional field-effect mobilities of 200 cm2 V-1 s-1 for electrons and 136 cm2 V-1 s-1 for holes. Within this vdW geometry, we further demonstrate the fundamental electrical components such as diodes and complementary inverters with enhanced rectification ratios and voltage gains. Our results showcase an effective and compatible with mass manufacturing method for precise polarity modulation of 2D semiconductors, providing a promising pathway toward large-scale high-performance 2D electronics and integrated circuits.
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Affiliation(s)
- Lingan Kong
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Hao Liu
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Xiaowei Wang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Aumber Abbas
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Lei Tang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Mengjiao Han
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Wenbo Li
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiuliang Ma
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qijie Liang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
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4
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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5
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Giza M, Świniarski M, Gertych AP, Czerniak-Łosiewicz K, Rogala M, Kowalczyk PJ, Zdrojek M. Contact Resistance Engineering in WS 2-Based FET with MoS 2 Under-Contact Interlayer: A Statistical Approach. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39186441 DOI: 10.1021/acsami.4c09688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.
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Affiliation(s)
- Małgorzata Giza
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Michał Świniarski
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Arkadiusz P Gertych
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | | | - Maciej Rogala
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Paweł J Kowalczyk
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Mariusz Zdrojek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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6
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Ko S, Lee D, Kim J, Kim CK, Kim J. Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors. ACS NANO 2024. [PMID: 39172704 DOI: 10.1021/acsnano.4c06159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
The persistent challenges encountered in metal-transition-metal dichalcogenide (TMD) junctions, including tunneling barriers and Fermi-level pinning, pose significant impediments to achieving optimal charge transport and reducing contact resistance. To address these challenges, a pioneering self-aligned edge contact (SAEC) process tailored for TMD-based field-effect transistors (FETs) is developed by integrating a WS2 semiconductor with a hexagonal boron nitride dielectric via reactive ion etching. This approach streamlines semiconductor fabrication by enabling edge contact formation without the need for additional lithography steps. Notably, SAEC TMD-based FETs exhibit exceptional device performance, featuring a high on/off current ratio of ∼108, field-effect mobility of up to 120 cm2/V·s, and controllable polarity─essential attributes for advanced TMD-based logic circuits. Furthermore, the SAEC process enables precise electrode positioning and effective minimization of parasitic capacitance, which are pivotal for attaining high-speed characteristics in TMD-based electronics. The compatibility of the SAEC technique with existing Si self-aligned processes underscores its feasibility for integration into post-CMOS applications, heralding an upcoming era of integration of TMDs into Si semiconductor electronics. The introduction of the SAEC process represents a significant advancement in TMD-based microelectronics and is poised to unlock the full potential of TMDs for future electronic technologies.
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Affiliation(s)
- Seokjin Ko
- Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Dongryul Lee
- Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jeongmin Kim
- Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Chang-Koo Kim
- Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jihyun Kim
- Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
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7
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Sun Z, Kim SY, Cai J, Shen J, Lan HY, Tan Y, Wang X, Shen C, Wang H, Chen Z, Wallace RM, Appenzeller J. Low Contact Resistance on Monolayer MoS 2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts. ACS NANO 2024; 18:22444-22453. [PMID: 39110477 DOI: 10.1021/acsnano.4c07267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced in part by the reaction of the source/drain contact metal and the ML TMD frequently results in a large Schottky barrier height, which limits the electrical performance of ML TMD field-effect transistors (FETs). However, at a microscopic level, little is known about how interface defects or reaction sites impact the electrical performance of ML TMD FETs. In this work, we have performed statistically meaningful electrical measurements on at least 120 FETs combined with careful surface analysis to unveil contact resistance dependence on interface chemistry. In particular, we achieved a low contact resistance for ML MoS2 FETs with ultrahigh-vacuum (UHV, 3 × 10-11 mbar) deposited Ni contacts, ∼500 Ω·μm, which is 5 times lower than the contact resistance achieved when deposited under high-vacuum (HV, 3 × 10-6 mbar) conditions. These electrical results strongly correlate with our surface analysis observations. X-ray photoelectron spectroscopy (XPS) revealed significant bonding species between Ni and MoS2 under UHV conditions compared to that under HV. We also studied the Bi/MoS2 interface under UHV and HV deposition conditions. Different from the case of Ni, we do not observe a difference in contact resistance or interface chemistry between contacts deposited under UHV and HV. Finally, this article also explores the thermal stability and reliability of the two contact metals employed here.
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Affiliation(s)
- Zheng Sun
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Jun Cai
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jianan Shen
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hao-Yu Lan
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yuanqiu Tan
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xinglu Wang
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Chao Shen
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhihong Chen
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Joerg Appenzeller
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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8
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Kim B, Lee S, Park JH. Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors. NANOSCALE HORIZONS 2024; 9:1417-1431. [PMID: 38973382 DOI: 10.1039/d4nh00030g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
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Affiliation(s)
- Byeongchan Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Seojoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea
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9
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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10
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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11
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Liu D, Liu Z, Gao X, Zhu J, Wang Z, Qiu R, Ren Q, Zhang Y, Zhang S, Zhang M. Hydrogen-Bonding Integrated Low-Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404626. [PMID: 38825781 DOI: 10.1002/adma.202404626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 05/24/2024] [Indexed: 06/04/2024]
Abstract
Van der Waals (vdW) integration enables clean contacts for low-dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between the metal and the semiconductor. Here, it is demonstrated from theoretical calculations that stronger non-covalent hydrogen-bonding interactions facilitate electron tunneling and significantly reduce the contact resistance; thus, promising to break the limitations of the vdW contact. π-plane hydrogen-bonding contacts in surface-engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, and an anomalous temperature-dependent tunneling resistance is observed. Low-dimensional flexible thin-film transistors integrated by hydrogen-bonding contacts exhibit both excellent flexibility and carrier mobility orders of magnitude higher than their counterparts with vdW contacts. This strategy demonstrates a scalable solution for realizing high-performance and low-power flexible electronics beyond vdW contacts.
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Affiliation(s)
- Dexing Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Ziyi Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Xinyu Gao
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Jiahao Zhu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Zifan Wang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Rui Qiu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Qinqi Ren
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Yiming Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Shengdong Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Min Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
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12
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Jin L, Wen J, Odlyzko M, Seaton N, Li R, Haratipour N, Koester SJ. High-Performance WS 2 MOSFETs with Bilayer WS 2 Contacts. ACS OMEGA 2024; 9:32159-32166. [PMID: 39072129 PMCID: PMC11270543 DOI: 10.1021/acsomega.4c04431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Revised: 06/22/2024] [Accepted: 06/24/2024] [Indexed: 07/30/2024]
Abstract
WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its monolayer thickness, high carrier mobility, and its potential for symmetric n-type and p-type MOSFET performance. However, the formation of stable, low-barrier-height contacts to monolayer TMDCs continues to be a challenge. This study introduces an innovative approach to realize high-performance WS2 MOSFETs by utilizing bilayer WS2 (2L-WS2) in the contact region grown through a two-step chemical vapor deposition process. The 2L-WS2 devices demonstrate a high I ON/I OFF ratio of 108 and a saturated drain current, I D(SAT), of 280 μA/μm (386 μA/μm) at room temperature (78 K), even while still using conventional metal (Pd or Ni) contacts. Devices featuring a 1L-WS2 channel and 2L-WS2 in the contact regions were also fabricated, and they exhibited performance comparable to that of 2L-WS2 devices. The devices also exhibit good stability with nearly identical performance after storage over a 13 month period. The study highlights the benefits of a hybrid channel thickness approach for TMDC transistors.
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Affiliation(s)
- Lun Jin
- Department
of Chemistry, University of Minnesota, 207 Pleasant Street SE, Minneapolis, Minnesota 55455, United States
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Michael Odlyzko
- College
of Science and Engineering Characterization Facility, Shepherd Laboratory, University of Minnesota, 100 Union St SE, Minneapolis, Minnesota 55455, United States
| | - Nicholas Seaton
- College
of Science and Engineering Characterization Facility, Shepherd Laboratory, University of Minnesota, 100 Union St SE, Minneapolis, Minnesota 55455, United States
| | - Ruixue Li
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Nazila Haratipour
- Components
Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Steven J. Koester
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
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13
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Chen S, Zhang Y, King WP, Bashir R, van der Zande AM. Edge-Passivated Monolayer WSe 2 Nanoribbon Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313694. [PMID: 39023387 DOI: 10.1002/adma.202313694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Revised: 07/06/2024] [Indexed: 07/20/2024]
Abstract
The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field-effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achieved using nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated-edge nanoribbon FETs exhibit 10 ± 6 times higher field-effect mobility than the open-edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation-based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond-silicon electronics and optoelectronics.
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Affiliation(s)
- Sihan Chen
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Yue Zhang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - William P King
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Rashid Bashir
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Bioengineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Arend M van der Zande
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
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14
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Li T, Jiang W, Wu Y, Zhou L, Ye H, Geng Y, Hu M, Liu K, Wang R, Sun Y. Controlled Fabrication of Metallic MoO 2 Nanosheets towards High-Performance p-Type 2D Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403118. [PMID: 38990881 DOI: 10.1002/smll.202403118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/09/2024] [Indexed: 07/13/2024]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are extensively employed as channel materials in advanced electronic devices. The electrical contacts between electrodes and 2D semiconductors play a crucial role in the development of high-performance transistors. While numerous strategies for electrode interface engineering have been proposed to enhance the performance of n-type 2D transistors, upgrading p-type ones in a similar manner remains a challenge. In this work, significant improvements in a p-type WSe2 transistor are demonstrated by utilizing metallic MoO2 nanosheets as the electrode contact, which are controllably fabricated through physical vapor deposition and subsequent annealing. The MoO2 nanosheets exhibit an exceptional electrical conductivity of 8.4 × 104 S m‒1 and a breakdown current density of 3.3 × 106 A cm‒2. The work function of MoO2 nanosheets is determined to be ≈5.1 eV, making them suitable for contacting p-type 2D semiconductors. Employing MoO2 nanosheets as the electrode contact in WSe2 transistors results in a notable increase in the field-effect mobility to 92.0 cm2 V‒1 s‒1, which is one order of magnitude higher than the counterpart devices with conventional electrodes. This study not only introduces an intriguing 2D metal oxide to improve the electrical contact in p-type 2D transistors, but also offers an effective approach to fabricating all-2D devices.
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Affiliation(s)
- Tianchi Li
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Wengui Jiang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Liang Zhou
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Huanyu Ye
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yuchen Geng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Minghui Hu
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Rongming Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yinghui Sun
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
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15
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Huang H, Zha J, Xu S, Yang P, Xia Y, Wang H, Dong D, Zheng L, Yao Y, Zhang Y, Chen Y, Ho JC, Chan HP, Zhao C, Tan C. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se xTe 1-x Nanosheets for p-Type Transistors and Inverters. ACS NANO 2024; 18:17293-17303. [PMID: 38885180 DOI: 10.1021/acsnano.4c05323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.
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Affiliation(s)
- Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Songcen Xu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Dechen Dong
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Chunsong Zhao
- Huawei Technologies Co., LTD., Shenzhen 518129, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China
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16
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Lee HY, Wang Z, Chen G, Holtzman LN, Yan X, Amontree J, Zangiabadi A, Watanabe K, Taniguchi T, Barmak K, Kim P, Hone JC. In situ via Contact to hBN-Encapsulated Air-Sensitive Atomically Thin Semiconductors. ACS NANO 2024; 18:17111-17118. [PMID: 38952326 DOI: 10.1021/acsnano.4c03736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Establishing reliable electrical contacts to atomically thin materials is a prerequisite for both fundamental studies and applications yet remains a challenge. In particular, the development of contact techniques for air-sensitive monolayers has lagged behind, despite their unique properties and significant potential for applications. Here, we present a robust method to create contacts to device layers encapsulated within hexagonal boron nitride (hBN). This method uses plasma etching and metal deposition to create 'vias' in the hBN with graphene forming an atomically thin etch-stop. The resulting partially fluorinated graphene (PFG) protects the underlying device layer from air-induced degradation and damage during metal deposition. PFG is resistive in-plane but maintains high out-of-plane conductivity. The work function of the PFG/metal contact is tunable through the degree of fluorination, offering opportunities for contact engineering. Using the in situ via technique, we achieve ambipolar contact to air-sensitive monolayer 2H-molybdenum ditelluride (MoTe2) with more than 1 order of magnitude improvement in on-current density compared to previous literature. The complete encapsulation provides high reproducibility and long-term stability. The technique can be extended to other air-sensitive materials as well as air-stable materials, offering highly competitive device performance.
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Affiliation(s)
- Hae Yeon Lee
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Grace Chen
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Xingzhou Yan
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Jacob Amontree
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Amirali Zangiabadi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Philip Kim
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
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17
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Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Boltzmann Switching MoS 2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314274. [PMID: 38647521 DOI: 10.1002/adma.202314274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 04/07/2024] [Indexed: 04/25/2024]
Abstract
A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of ≈60 mV dec-1 and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (EF) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that EF depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics.
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Affiliation(s)
- Yeon Ho Kim
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Wei Jiang
- Department of Electrical and Computer Engineering, University of Minnesota, Minnesota, 55455, USA
| | - Donghun Lee
- Department of Chemistry, Kookmin University, Seoul, 02707, Republic of Korea
| | - Donghoon Moon
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyun-Young Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - June-Chul Shin
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yeonsu Jeong
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jong Chan Kim
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Jaeho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Chang Yong Han
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Jae-Pil So
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Seong Been Kim
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hyun Cheol Koo
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Seongil Im
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minnesota, 55455, USA
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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18
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Kim KS, Kwon J, Ryu H, Kim C, Kim H, Lee EK, Lee D, Seo S, Han NM, Suh JM, Kim J, Song MK, Lee S, Seol M, Kim J. The future of two-dimensional semiconductors beyond Moore's law. NATURE NANOTECHNOLOGY 2024; 19:895-906. [PMID: 38951597 DOI: 10.1038/s41565-024-01695-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Accepted: 05/14/2024] [Indexed: 07/03/2024]
Abstract
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.
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Affiliation(s)
- Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Junyoung Kwon
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea
| | - Huije Ryu
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea
| | - Changhyun Kim
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA
| | - Eun-Kyu Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea
| | - Doyoon Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Seunghwan Seo
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Minsu Seol
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea.
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd, Suwon, Korea.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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19
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Wu JY, Jiang HY, Wen ZY, Wang CR, Zhang T. Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32357-32366. [PMID: 38877995 DOI: 10.1021/acsami.4c04023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.
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Affiliation(s)
- Jing-Yuan Wu
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Hai-Yang Jiang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Zhao-Yang Wen
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Chun-Rui Wang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, and School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University Suzhou Campus, Suzhou 215123, China
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20
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Pei X, Hu X, Xu T, Sun L. The Contact Properties of Monolayer and Multilayer MoS 2-Metal van der Waals Interfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1075. [PMID: 38998679 PMCID: PMC11243427 DOI: 10.3390/nano14131075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 06/17/2024] [Accepted: 06/21/2024] [Indexed: 07/14/2024]
Abstract
The contact resistance formed between MoS2 and metal electrodes plays a key role in MoS2-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS2-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS2-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew-Burke-Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS2-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS2-metal vdW interfaces. Furthermore, as the layer number of MoS2 increases from 1L to 4L, the FLP effect is first weakened and then increased, which can be attributed to the charge redistribution at the MoS2-metal and MoS2-MoS2 interfaces. In addition, the p-type Schottky contact can be achieved in 1L-4L MoS2-Pt, 3L MoS2-Au, and 2L-3L MoS2-Pd vdW interfaces, which is useful for realizing complementary metal oxide semiconductor (CMOS) logic circuits. These findings indicated that the FLP and contact types can be effectively modulated at MoS2-metal vdW interfaces by selecting the layer number of MoS2.
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Affiliation(s)
- Xin Pei
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
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21
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Guo H, Pan J, Du S. First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB 4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31513-31523. [PMID: 38840440 DOI: 10.1021/acsami.4c05905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Designing two-dimensional (2D) heterojunctions with rapid response and minimal energy consumption holds immense significance for the advancement of the next generation of electronic devices. Here, we construct a series of Schottky heterojunctions based on TiB4 monolayer and group-IV monochalcogenide monolayers MX (M = Ge, Sn; X = S, Se, Te). Using first-principles calculations, we investigate the structural stability, Schottky contact barrier, tunneling probability, and optical properties of MX/TiB4 heterojunctions. The calculated binding energies reveal that X-type MX/TiB4 heterojunctions exhibit more stable structures than M- and C-type stacking modes. Schottky barrier heights (SBHs) indicate that X-type GeSe/TiB4 and GeTe/TiB4 form n-type Schottky contacts with SBHs of 0.497 and 0.132 eV, respectively, while SnS/TiB4 and SnSe/TiB4 form p-type Schottky contacts with SBHs of 0.557 and 0.418 eV, respectively. Moreover, X-type MX/TiB4 heterojunctions exhibit high susceptibility to interlayer electron tunneling due to their large tunneling probability and strong interlayer interaction. Meanwhile, enhanced optical absorption capacity in MX/TiB4 heterojunctions is also observed compared with individual TiB4 and MX monolayers. By applying in-plane biaxial strain, the transformation of MX/TiB4 heterojunctions from a Schottky contact to an Ohmic contact can also be realized. Our findings could offer valuable candidate materials and guidance for the design of the next generation of nanodevices with high electronic and optical performances.
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Affiliation(s)
- Hao Guo
- School of Urban Construction, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinbo Pan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
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22
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Fu X, Liu Z, Wang H, Xie D, Sun Y. Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2400500. [PMID: 38884208 DOI: 10.1002/advs.202400500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 05/11/2024] [Indexed: 06/18/2024]
Abstract
For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.
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Affiliation(s)
- Xiaqing Fu
- School of Microelectronics, Shanghai University, Shanghai, 201800, P. R. China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, P. R. China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
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23
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Bae J, Ryu H, Kim D, Lee CS, Seol M, Byun KE, Kim S, Lee S. Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314164. [PMID: 38608715 DOI: 10.1002/adma.202314164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 04/02/2024] [Indexed: 04/14/2024]
Abstract
The potential of monolithic 3D integration technology is largely dependent on the enhancement of interconnect characteristics which can lead to thinner stacks, better heat dissipation, and reduced signal delays. Carbon materials such as graphene, characterized by sp2 hybridized carbons, are promising candidates for future interconnects due to their exceptional electrical, thermal conductivity and resistance to electromigration. However, a significant challenge lies in achieving low contact resistance between extremely thin semiconductor channels and graphitic materials. To address this issue, an innovative wafer-scale synthesis approach is proposed that enables low contact resistance between dry-transferred 2D semiconductors and the as-grown nanocrystalline graphitic interconnects. A hybrid graphitic interconnect with metal doping reduces the sheet resistance by 84% compared to an equivalent thickness metal film. Furthermore, the introduction of a buried graphitic contact results in a contact resistance that is 17 times lower than that of bulk metal contacts (>40 nm). Transistors with this optimal structure are used to successfully demonstrate a simple logic function. The thickness of active layer is maintained within sub-7 nm range, encompassing both channels and contacts. The ultrathin transistor and interconnect stack developed here, characterized by a readily etchable interlayer and low parasitic resistance, leads to heterogeneous integration of future 3D integrated circuits (ICs).
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Affiliation(s)
- Junseong Bae
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Hyeyoon Ryu
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Dohee Kim
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Chang-Seok Lee
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Minsu Seol
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Kyung-Eun Byun
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Sangwon Kim
- Device Research Center, Samsung Advanced Institute of Technology, Suwon, 18448, Republic of Korea
| | - Seunghyun Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17104, Republic of Korea
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24
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Zhang X, Huang C, Li Z, Fu J, Tian J, Ouyang Z, Yang Y, Shao X, Han Y, Qiao Z, Zeng H. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts. Nat Commun 2024; 15:4619. [PMID: 38816431 PMCID: PMC11139895 DOI: 10.1038/s41467-024-49058-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Accepted: 05/23/2024] [Indexed: 06/01/2024] Open
Abstract
Since the first report on single-layer MoS2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.
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Affiliation(s)
- Xiaodong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Chenxi Huang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Zeyu Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Jiaran Tian
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Zhuping Ouyang
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Yuliang Yang
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Xiang Shao
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Yulei Han
- Department of Physics, Fuzhou University, Fuzhou, China
| | - Zhenhua Qiao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China.
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25
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Kerwin B, Liu SE, Sadhukhan T, Dasgupta A, Jones LO, López-Arteaga R, Zeng TT, Facchetti A, Schatz GC, Hersam MC, Marks TJ. Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p-Type Doping Method. Angew Chem Int Ed Engl 2024; 63:e202403494. [PMID: 38551580 DOI: 10.1002/anie.202403494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Indexed: 04/24/2024]
Abstract
Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.
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Affiliation(s)
- Brendan Kerwin
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Stephanie E Liu
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Leighton O Jones
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Rafael López-Arteaga
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Thomas T Zeng
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, United States
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Mark C Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
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26
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Xie J, Zhang Z, Zhang H, Nagarajan V, Zhao W, Kim HL, Sanborn C, Qi R, Chen S, Kahn S, Watanabe K, Taniguchi T, Zettl A, Crommie MF, Analytis J, Wang F. Low Resistance Contact to P-Type Monolayer WSe 2. NANO LETTERS 2024; 24:5937-5943. [PMID: 38712885 DOI: 10.1021/acs.nanolett.3c04195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe2 transistors with an on-current of 35 μA·μm-1 and an ION/IOFF ratio exceeding 109 at room temperature.
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Affiliation(s)
- Jingxu Xie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Graduate Group in Applied Science and Technology, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Zuocheng Zhang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Haodong Zhang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Vikram Nagarajan
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Wenyu Zhao
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Ha-Leem Kim
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Collin Sanborn
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Ruishi Qi
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sudi Chen
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Salman Kahn
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michael F Crommie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - James Analytis
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Feng Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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27
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Meng J, Lee C, Li Z. Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices. Sci Bull (Beijing) 2024; 69:1342-1352. [PMID: 38490891 DOI: 10.1016/j.scib.2024.03.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/10/2024] [Accepted: 02/02/2024] [Indexed: 03/17/2024]
Abstract
The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal-semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.
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Affiliation(s)
- Jianping Meng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore 117608, Singapore.
| | - Zhou Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
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28
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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Liu X, Shan J, Cao T, Zhu L, Ma J, Wang G, Shi Z, Yang Q, Ma M, Liu Z, Yan S, Wang L, Dai Y, Xiong J, Chen F, Wang B, Pan C, Wang Z, Cheng B, He Y, Luo X, Lin J, Liang SJ, Miao F. On-device phase engineering. NATURE MATERIALS 2024:10.1038/s41563-024-01888-y. [PMID: 38664497 DOI: 10.1038/s41563-024-01888-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 04/03/2024] [Indexed: 08/15/2024]
Abstract
In situ tailoring of two-dimensional materials' phases under external stimulus facilitates the manipulation of their properties for electronic, quantum and energy applications. However, current methods are mainly limited to the transitions among phases with unchanged chemical stoichiometry. Here we propose on-device phase engineering that allows us to realize various lattice phases with distinct chemical stoichiometries. Using palladium and selenide as a model system, we show that a PdSe2 channel with prepatterned Pd electrodes can be transformed into Pd17Se15 and Pd4Se by thermally tailoring the chemical composition ratio of the channel. Different phase configurations can be obtained by precisely controlling the thickness and spacing of the electrodes. The device can be thus engineered to implement versatile functions in situ, such as exhibiting superconducting behaviour and achieving ultralow-contact resistance, as well as customizing the synthesis of electrocatalysts. The proposed on-device phase engineering approach exhibits a universal mechanism and can be expanded to 29 element combinations between a metal and chalcogen. Our work highlights on-device phase engineering as a promising research approach through which to exploit fundamental properties as well as their applications.
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Affiliation(s)
- Xiaowei Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junjie Shan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Liang Zhu
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Jiayu Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Zude Shi
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Qishuo Yang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Mingyu Ma
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zenglin Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shengnan Yan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yudi Dai
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junlin Xiong
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanqiang Chen
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Buwei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Zhenlin Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen, China.
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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Wani SS, Hsu CC, Kuo YZ, Darshana Kumara Kimbulapitiya KM, Chung CC, Cyu RH, Chen CT, Liu MJ, Chaudhary M, Chiu PW, Zhong YL, Chueh YL. Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers. ACS NANO 2024; 18:10776-10787. [PMID: 38587200 PMCID: PMC11044573 DOI: 10.1021/acsnano.3c11025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 02/23/2024] [Accepted: 03/01/2024] [Indexed: 04/09/2024]
Abstract
The electronic properties of 2D materials are highly influenced by the molecular activity at their interfaces. A method was proposed to address this issue by employing passivation techniques using monolayer MoS2 field-effect transistors (FETs) while preserving high performance. Herein, we have used alkali metal fluorides as dielectric capping layers, including lithium fluoride (LiF), sodium fluoride (NaF), and potassium fluoride (KF) dielectric capping layers, to mitigate the environmental impact of oxygen and water exposure. Among them, the LiF dielectric capping layer significantly improved the transistor performance, specifically in terms of enhanced field effect mobility from 74 to 137 cm2/V·s, increased current density from 17 μA/μm to 32.13 μA/μm at a drain voltage of Vd of 1 V, and decreased subthreshold swing to 0.8 V/dec The results have been analytically verified by X-ray photoelectron spectroscopy (XPS) and Raman, and photoluminescence (PL) spectroscopy, and the demonstrated technique can be extended to other transition metal dichalcogenide (TMD)-based FETs, which can become a prospect for cutting-edge electronic applications. These findings highlight certain important trade-offs and provide insight into the significance of interface control and passivation material choice on the electrical stability, performance, and enhancement of the MoS2 FET.
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Affiliation(s)
- Sumayah-Shakil Wani
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chen Chieh Hsu
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yao-Zen Kuo
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Kimbulapitiya Mudiyanselage
Madhusanka Darshana Kumara Kimbulapitiya
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chia-Chen Chung
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ruei-Hong Cyu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chieh-Ting Chen
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ming-Jin Liu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Mayur Chaudhary
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Po-Wen Chiu
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Institute
of Electronics Engineering, National Tsing
Hua University, Hsinchu, 30013, Taiwan
| | - Yuan-Liang Zhong
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Department
of Materials Science and Engineering, Korea
University, Seoul 02841, Republic of Korea
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31
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Lv H, Chu L, Lu P, Lu N, Cai X, Du H, Chen F. Photothermionic Effect-Assisted Ultrafast Charge Transfer in NbS 2/MoS 2 Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16669-16677. [PMID: 38514924 DOI: 10.1021/acsami.3c19128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures (vdW HSs) composed of transition metal dichalcogenides (TMDCs) have emerged as frontrunners in the optoelectronics field, owing to their exceptional optical and electrical properties. Recent research on the intrinsic interlayer charge transfer mechanism has been primarily focused on the Type II HSs, while metal-semiconductor (MS) vertical HSs, promising for advancing photodetector technology, have received comparatively less attention. Here, we reveal the first experimental observation of photothermionic effect-assisted ultrafast interlayer charge transfer in the NbS2/MoS2 heterostructure using femtosecond transient absorption technology and first-principles calculations, effectively ignoring the Schottky barrier height. We demonstrate that within 500 fs, charge transfer occurs from NbS2 to MoS2 in the heterostructure, resulting in supplementary carrier generation in the visible spectrum when excited with infrared light below the MoS2 bandgap, at wavelengths of 1030 and 1500 nm. Such promising characteristics of 2D NbS2-semiconductor heterostructures offer a potential platform for synergistically combining low contact resistance with broadband photocarrier generation, marking a significant advancement in optoelectronics and light harvesting.
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Affiliation(s)
- Hengyue Lv
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lingrui Chu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Peng Lu
- School of Physics, Shandong University, Jinan 250100, China
| | - Ning Lu
- School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
| | - Xiaofan Cai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Haoyang Du
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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32
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Yoo MS, Byun KE, Lee H, Lee MH, Kwon J, Kim SW, Jeong U, Seol M. Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310282. [PMID: 38190458 DOI: 10.1002/adma.202310282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/07/2023] [Indexed: 01/10/2024]
Abstract
Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics.
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Affiliation(s)
- Min Seok Yoo
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Kyung-Eun Byun
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Hyangsook Lee
- Analytical Science Laboratory, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Min-Hyun Lee
- Thin film Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Junyoung Kwon
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Sang Won Kim
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro Nam-Gu, Pohang, 37673, Republic of Korea
| | - Minsu Seol
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
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33
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Diallo TM, Hanuš T, Patriarche G, Ruediger A, Boucherif A. Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306038. [PMID: 38009786 DOI: 10.1002/smll.202306038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Revised: 10/31/2023] [Indexed: 11/29/2023]
Abstract
The heterointegration of graphene with semiconductor materials and the development of graphene-based hybrid functional devices are heavily bound to the control of surface energy. Although remote epitaxy offers one of the most appealing techniques for implementing 3D/2D heterostructures, it is only suitable for polar materials and is hugely dependent on the graphene interface quality. Here, the growth of defect-free single-crystalline germanium (Ge) layers on a graphene-coated Ge substrate is demonstrated by introducing a new approach named anchor point nucleation (APN). This powerful approach based on graphene surface engineering enables the growth of semiconductors on any type of substrate covered by graphene. Through plasma treatment, defects such as dangling bonds and nanoholes, which act as preferential nucleation sites, are introduced in the graphene layer. These experimental data unravel the nature of those defects, their role in nucleation, and the mechanisms governing this technique. Additionally, high-resolution transmission microscopy combined with geometrical phase analysis established that the as-grown layers are perfectly single-crystalline, stress-free, and oriented by the substrate underneath the engineered graphene layer. These findings provide new insights into graphene engineering by plasma and open up a universal pathway for the heterointegration of high-quality 3D semiconductors on graphene for disruptive hybrid devices.
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Affiliation(s)
- Thierno Mamoudou Diallo
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
| | - Tadeáš Hanuš
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, Palaiseau, 91120, France
| | - Andreas Ruediger
- Nanoelectronics-Nanophotonics INRS-EMT, 1650, Boulevard Lionel-Boulet, Varennes, QC, J3×1P7, Canada
| | - Abderraouf Boucherif
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
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34
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Wang D, Tan C, Wang S, Yang Z, Yang L, Wang Z. Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics. ACS APPLIED MATERIALS & INTERFACES 2024; 16:14064-14071. [PMID: 38452753 DOI: 10.1021/acsami.3c19260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS2, WS2, and WSe2) by using lanthanide metal (Sm and Gd) contacts. It was found the lanthanide contacts exhibit a good Ohmic property with a near-zero Schottky barrier. As a result, the carrier mobility of MoS2 transistors reaches 118 cm2/(V s). Furthermore, Gd-contact MoS2 transistors show the typical magnetic property where the magnetoresistance reaches 2.7% at 5 K. By studying its spin valve effect, it was demonstrated that the nonlocal magnetoresistance is 4.1% and spin polarization is 3.25%. This study provides a promising pathway for high-performance 2D electronic and spintronics, which may open a new strategy for future computing-in-memory architecture.
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Affiliation(s)
- Dong Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Shaoyuan Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
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35
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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36
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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37
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Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13258-13266. [PMID: 38422472 DOI: 10.1021/acsami.3c18332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The high contact resistance of transition metal dichalcogenide (TMD)-based devices is receiving considerable attention due to its limitation on electronic performance. The mechanism of Fermi level (EF) pinning, which causes the high contact resistance, is not thoroughly understood to date. In this study, the metal (Ni and Ag)/Mo-TMD surfaces and interfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunneling microscopy and spectroscopy, and density functional theory systematically. Ni and Ag form covalent and van der Waals (vdW) interfaces on Mo-TMDs, respectively. Imperfections are detected on Mo-TMDs, which lead to electronic and spatial variations. Gap states appear after the adsorption of single and two metal atoms on Mo-TMDs. The combination of the interface reaction type (covalent or vdW), the imperfection variability of the TMD materials, and the gap states induced by contact metals with different weights are concluded to be the origins of EF pinning.
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Affiliation(s)
- Xinglu Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
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38
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Singh J, Astarini NA, Tsai M, Venkatesan M, Kuo C, Yang C, Yen H. Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307839. [PMID: 38164110 PMCID: PMC10953574 DOI: 10.1002/advs.202307839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/28/2023] [Indexed: 01/03/2024]
Abstract
Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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Affiliation(s)
- Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
- Department of PhysicsUdit Narayan Post Graduate College PadraunaKushinagarUttar Pradesh274304India
| | - Nadiya Ayu Astarini
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Manikandan Venkatesan
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chi‐Ching Kuo
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chan‐Shan Yang
- Institute and Undergraduate Program of Electro‐Optical EngineeringNational Taiwan Normal UniversityTaipei City11677Taiwan
| | - Hung‐Wei Yen
- Department of Materials Science and EngineeringNational Taiwan UniversityTaipei City106319Taiwan
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39
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Kim JH, Sarkar S, Wang Y, Taniguchi T, Watanabe K, Chhowalla M. Room Temperature Negative Differential Resistance with High Peak Current in MoS 2/WSe 2 Heterostructures. NANO LETTERS 2024; 24:2561-2566. [PMID: 38363877 PMCID: PMC10906070 DOI: 10.1021/acs.nanolett.3c04607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/18/2024]
Abstract
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (VGS). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global VGS, and h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 μA, suggesting that the approach may be useful for applications.
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Affiliation(s)
- Jung Ho Kim
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Soumya Sarkar
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Yan Wang
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Manish Chhowalla
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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40
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Li L, Wang Q, Wu F, Xu Q, Tian J, Huang Z, Wang Q, Zhao X, Zhang Q, Fan Q, Li X, Peng Y, Zhang Y, Ji K, Zhi A, Sun H, Zhu M, Zhu J, Lu N, Lu Y, Wang S, Bai X, Xu Y, Yang W, Li N, Shi D, Xian L, Liu K, Du L, Zhang G. Epitaxy of wafer-scale single-crystal MoS 2 monolayer via buffer layer control. Nat Commun 2024; 15:1825. [PMID: 38418816 PMCID: PMC10901795 DOI: 10.1038/s41467-024-46170-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 02/16/2024] [Indexed: 03/02/2024] Open
Abstract
Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.
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Affiliation(s)
- Lu Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qiaoling Xu
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
- College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University, Chengdu, 610068, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghe Wang
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinkai Fan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangkun Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kunshan Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Aomiao Zhi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Huacong Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jundong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Ying Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shuopei Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Na Li
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Kaihui Liu
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
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Chen J, Liu L, Chen H, Xu N, Deng S. Controlled Preparation of High Quality Bubble-Free and Uniform Conducting Interfaces of Vertical van der Waals Heterostructures of Arrays. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10877-10885. [PMID: 38360529 DOI: 10.1021/acsami.3c16128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
Sharp and clean interfaces of van der Waals (vdW) heterostructures are highly demanded in two-dimensional (2D) materials-based devices. However, current assembly methods usually cause interfacial bubbles and wrinkles, hindering carrier interlayer transport. The preparation of a large-scale vdW heterostructure with a bubble-free interface is still a challenge. Although many efforts have been made to eliminate bubbles, the evolution processes of the interfacial bubbles are rarely studied. Here, the interface bubble formation and evolution of the transferred 2D materials and their vdW heterostructure are systemically studied by the atomic force microscopy (AFM) technique and high-resolution surface current mapping. A thermal annealing procedure is developed to reduce the number of bubbles and to improve the quality of interfaces. In addition, influences of the interface residues and nanosteps on bubble evolution are also discussed. Further, we develop the polystyrene (PS)-mediated polydimethylsiloxane (PDMS) transfer technique to realize the high-quality transfer of heterostructure arrays. Finally, high-resolution surface current mapping results confirm that we can now produce highly uniform electrical conduction interfaces of heterojunctions. This study provides guidance for assembling high quality interfaces and paves the way for production of bubble-free heterostructure-based electronic devices with high performance and good uniformity.
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Affiliation(s)
- Jianwei Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Liwei Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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42
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Wong H, Zhang J, Liu J. Contacts at the Nanoscale and for Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:386. [PMID: 38392759 PMCID: PMC10893407 DOI: 10.3390/nano14040386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 02/06/2024] [Accepted: 02/16/2024] [Indexed: 02/24/2024]
Abstract
Contact scaling is a major challenge in nano complementary metal-oxide-semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanometer range. These factors increase the contact resistance and the nonlinearity of the current-voltage characteristics, which could limit the benefits of the further downsizing of CMOS devices. This review discusses issues related to the contact size reduction of nano CMOS technology and the validity of the Schottky junction model at the nanoscale. The difficulties, such as the limited doping level and choices of metal for band alignment, Fermi-level pinning, and van der Waals gap, in achieving transparent ohmic contacts with emerging two-dimensional materials are also examined. Finally, various methods for improving ohmic contacts' characteristics, such as two-dimensional/metal van der Waals contacts and hybrid contacts, junction doping technology, phase and bandgap modification effects, buffer layers, are highlighted.
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Affiliation(s)
- Hei Wong
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, China
| | - Jieqiong Zhang
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
| | - Jun Liu
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
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43
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Ghani M, Sarkar S, Lee JI, Zhu Y, Yan H, Wang Y, Chhowalla M. Metal Films on Two-Dimensional Materials: van der Waals Contacts and Raman Enhancement. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7399-7405. [PMID: 38318783 PMCID: PMC10875649 DOI: 10.1021/acsami.3c15598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 01/18/2024] [Accepted: 01/21/2024] [Indexed: 02/07/2024]
Abstract
Electronic devices based on two-dimensional (2D) materials will need ultraclean and defect-free van der Waals (vdW) contacts with three-dimensional (3D) metals. It is therefore important to understand how vdW metal films deposit on 2D surfaces. Here, we study the growth and nucleation of vdW metal films of indium (In) and non-vdW metal films of gold (Au), deposited on 2D MoS2 and graphene. In follows a 2D growth mode in contrast to Au that follows a 3D growth mode. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to image the morphology of metal clusters during growth and quantify the nucleation density. As compared to Au, In atoms exhibit nearly 50 times higher diffusivity (3.65 × 10-6 μm-2 s-1) and half the nucleation density (64.9 ± 2.46 μm-2), leading to larger grain sizes (∼60 nm for 5 nm In on monolayer MoS2). The grain size of In can be further increased by reducing the 2D surface roughness, while the grain size for Au is limited by its high nucleation density due to the creation of interface defects during deposition. The vdW gap between In and MoS2 and graphene leads to strong enhancement (>103) in their Raman signal intensity due to localized surface plasmon resonance. In the absence of a vdW gap, the plasmon-mediated enhancement in Raman does not occur.
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Affiliation(s)
- Maheera
Abdul Ghani
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Soumya Sarkar
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Jung-In Lee
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Yiru Zhu
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Han Yan
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Yan Wang
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
| | - Manish Chhowalla
- Department of Materials Science
& Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
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Jeong H, Nomenyo K, Oh HM, Gwiazda A, Yun SJ, Chevalier César C, Salas-Montiel R, Wourè-Nadiri Bayor S, Jeong MS, Lee YH, Lérondel G. Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide. ACS NANO 2024; 18:4432-4442. [PMID: 38284564 DOI: 10.1021/acsnano.3c10721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe2) simply deposited on a structured electrode, i.e., core-shell silicon-gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe2-based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance.
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Affiliation(s)
- Hyun Jeong
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Komla Nomenyo
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Département de Génie Electrique, Ecole Nationale Supérieure d'Ingénieurs (ENSI), Université de Lomé, BP 1515 Lomé, Togo
| | - Hye Min Oh
- Department of Physics, Kunsan National University, Kunsan, 54150, Republic of Korea
| | - Agnieszka Gwiazda
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
| | - Seok Joon Yun
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Clotaire Chevalier César
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
| | - Rafael Salas-Montiel
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
| | - Sibiri Wourè-Nadiri Bayor
- Département de Génie Electrique, Ecole Nationale Supérieure d'Ingénieurs (ENSI), Université de Lomé, BP 1515 Lomé, Togo
| | - Mun Seok Jeong
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Gilles Lérondel
- Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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45
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Chen X, Wang G, Li B, Wang N. Strain-Driven High Thermal Conductivity in Hexagonal Boron Phosphide Monolayer. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024. [PMID: 38299976 DOI: 10.1021/acs.langmuir.3c03472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Two-dimensional graphenelike material, hexagonal boron phosphide (h-BP), is a promising candidate for electronic and optoelectronic devices because of its suitable band gap and high carrier mobility. Especially from the ultrahigh lattice thermal conductivity (κl), it exhibits great potential to solve the challenges of future thermal management applications. Here, the excellent lattice thermal transport properties of the h-BP monolayer are systematically analyzed at the atomic level based on the first-principles method. The results show that the ultrahigh κl value of the h-BP monolayer is attributed to its high phonon group velocity and long phonon lifetime and the strong phonon hydrodynamic effect. We further explore the influence of the tensile strain on the thermal transport properties of the h-BP monolayer. As the strain increases from 0 to 8%, the κl value shows a trend of first increasing and then decreasing due to the coeffect of strain-driven changes for phonon harmonicity and anharmonicity. Under a strain of 6%, the κl value of the h-BP monolayer is as high as 795 W/mK at 300 K, which is about 2.22 times larger than that of 357 W/mK without strain. Such a significant increase in the κl value is mainly due to the increased phonon group velocity and decreased Grüneisen parameter caused by strain. This work is helpful to understand the critical role of tensile strain in lattice thermal transport of two-dimensional graphenelike materials. It is conducive to promoting the thermal management application of the h-BP monolayer.
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Affiliation(s)
- Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Guangzhao Wang
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
| | - Bingke Li
- Henan Key Laboratory of Industrial Microbial Resources and Fermentation Technology, School of Biological and Chemical Engineering, Nanyang Institute of Technology, Nanyang 473004, China
| | - Ning Wang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
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46
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Wang G, Liu F, Chen R, Wang M, Yin Y, Zhang J, Sa Z, Li P, Wan J, Sun L, Lv Z, Tan Y, Chen F, Yang ZX. Tunable Contacts of Bi 2 O 2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306363. [PMID: 37817352 DOI: 10.1002/smll.202306363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 09/08/2023] [Indexed: 10/12/2023]
Abstract
Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.
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Affiliation(s)
- Guangcan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Ruichang Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Pengsheng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Junchen Wan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Li Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zengtao Lv
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng, 252059, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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47
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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48
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Hurtado C, Andreoli T, Le Brun AP, MacGregor M, Darwish N, Ciampi S. Galinstan Liquid Metal Electrical Contacts for Monolayer-Modified Silicon Surfaces. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:201-210. [PMID: 38101331 DOI: 10.1021/acs.langmuir.3c02340] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Galinstan is the brand name for a low-melting gallium-based alloy, which is a promising nontoxic alternative to mercury, the only elemental metal found in the liquid state at room temperature. Liquid alloys such as Galinstan have found applications as electromechanical actuators, sensors, and soft contacts for molecular electronics. In this work, we validate the scope of Galinstan top contacts to probe the electrical characteristics of Schottky junctions made on Si(111) and Si(211) crystals modified with Si-C-bound organic monolayers. We show that the surface-to-volume ratio of the Galinstan drop used as a macroscopic contact defines the junction stability. Further, we explore chemical strategies to increase Galinstan surface tension to obtain control over the junction area, hence improving the repeatability and reproducibility of current-voltage (I-V) measurements. We explore Galinstan top contacts as a means to monitor changes in rectification ratios caused by surface reactions and use these data, most notably the static junction leakage, toward making qualitative predictions on the DC outputs recorded when these semiconductor systems are incorporated in Schottky-based triboelectric nanogenerators. We found that the introduction of iron particles leads to poor data repeatability for capacitance-voltage (C-V) measurements but has only a small negative impact in a dynamic current measurement (I-V).
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Affiliation(s)
- Carlos Hurtado
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Tony Andreoli
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Anton P Le Brun
- Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organization, Lucas Heights, New South Wales 2234, Australia
| | - Melanie MacGregor
- Flinders Institute for Nanoscale Science and Technology, Flinders University, Bedford Park, South Australia 5042, Australia
| | - Nadim Darwish
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Simone Ciampi
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
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49
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Liu L, Chen Y, Chen L, Xie B, Li G, Kong L, Tao Q, Li Z, Yang X, Lu Z, Ma L, Lu D, Yang X, Liu Y. Ultrashort vertical-channel MoS 2 transistor using a self-aligned contact. Nat Commun 2024; 15:165. [PMID: 38167517 PMCID: PMC10761794 DOI: 10.1038/s41467-023-44519-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 12/15/2023] [Indexed: 01/05/2024] Open
Abstract
Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.
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Affiliation(s)
- Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Long Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Biao Xie
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guoli Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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50
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Lee I, Kang M, Park S, Park C, Lee H, Bae S, Lim H, Kim S, Hong W, Choi SY. Healing Donor Defect States in CVD-Grown MoS 2 Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305143. [PMID: 37670210 DOI: 10.1002/smll.202305143] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/15/2023] [Indexed: 09/07/2023]
Abstract
Molybdenum disulfide (MoS2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (Vs ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS2 is proposed using oxygen plasma, with an aluminum oxide (Al2 O3 ) barrier layer that protects the MoS2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS2 by oxygen atoms, even in the presence of an Al2 O3 barrier layer, is confirmed by X-ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn2D = -3.82×1012 cm-2 ), the proposed approach increases the on-current and mobility by 18% and 44% under optimal conditions, respectively. Metal-insulator transition occurs at electron concentrations of 5.7×1012 cm-2 and reflects improved channel quality. Finally, the activation energy (Ea ) reduces at all the gate voltages (VG ) owing to a decrease in Vs , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma-assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next-generation electronic devices.
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Affiliation(s)
- Inseong Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Mingu Kang
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seohak Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Cheolmin Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeonji Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sanggeun Bae
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeongjin Lim
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea
| | - Woonggi Hong
- Convergence Semiconductor Research Center, School of Electronics and Electrical Engineering, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do, 16890, Republic of Korea
| | - Sung-Yool Choi
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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