151
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Zhu X, Jiang H, Zhang Y, Wang D, Fan L, Chen Y, Qu X, Yang L, Liu Y. Tunable Contact Types and Interfacial Electronic Properties in TaS 2/MoS 2 and TaS 2/WSe 2 Heterostructures. Molecules 2023; 28:5607. [PMID: 37513478 PMCID: PMC10385421 DOI: 10.3390/molecules28145607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 07/18/2023] [Accepted: 07/19/2023] [Indexed: 07/30/2023] Open
Abstract
Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures (vdWHs) contact. We show that 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 form n-type Schottky contact (n-ShC type) and p-type Schottky contact (p-ShC type) with ultralow Schottky barrier height (SBH), respectively. This indicates that 1T-TaS2 can be considered as an effective metal contact with high charge injection efficiency for 2H-MoS2, 2H-WSe2 semiconductors. In addition, the electronic structure and interfacial properties of 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures can be transformed from n-type to p-type Schottky contact through the effect of layer spacing and the electric field. At the same time, the transition from Schottky contact to Ohmic contact can also occur by relying on the electric field and different interlayer spacing. Our results may provide a new approach for photoelectric application design based on metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures.
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Affiliation(s)
- Xiangjiu Zhu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Hongxing Jiang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yukai Zhang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Dandan Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Lin Fan
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yanli Chen
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Xin Qu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Lihua Yang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yang Liu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
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152
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Hong S, Hong CU, Lee S, Jang M, Jang C, Lee Y, Widiapradja LJ, Park S, Kim K, Son YW, Yook JG, Im S. Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning. SCIENCE ADVANCES 2023; 9:eadh9770. [PMID: 37467332 DOI: 10.1126/sciadv.adh9770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2023] [Accepted: 06/16/2023] [Indexed: 07/21/2023]
Abstract
Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at ~200-GHz cutoff frequency (fC). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance-induced delay, so that the Ohmic graphene/MoSe2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher fC, which clearly demonstrates the merit of graphene at high frequencies.
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Affiliation(s)
- Sungjae Hong
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Chang-Ui Hong
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sol Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Myeongjin Jang
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Chorom Jang
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Yangjin Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Livia Janice Widiapradja
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Sam Park
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Young-Woo Son
- School of Computational Sciences, Korea Institute for Advanced Study, Seoul 02455, Republic of Korea
| | - Jong-Gwan Yook
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seongil Im
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
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153
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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154
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Han Y, Lee DH, Cho ES, Kwon SJ, Yoo H. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors. MICROMACHINES 2023; 14:1394. [PMID: 37512704 PMCID: PMC10383919 DOI: 10.3390/mi14071394] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types of a-IGZO TFTs with different oxygen flow rates and then investigated changes in electrical characteristics. Atomic force microscopy (AFM) was performed to analyze the surface morphology of the a-IGZO films according to the oxygen gas rate. Furthermore, X-ray photoelectron spectroscopy (XPS) analysis was performed to confirm changes in oxygen vacancies of a-IGZO films. The optimized a-IGZO TFT has enhanced electrical characteristics such as carrier mobility (μ) of 12.3 cm2/V·s, on/off ratio of 1.25 × 1010 A/A, subthreshold swing (S.S.) of 3.7 V/dec, and turn-on voltage (Vto) of -3 V. As a result, the optimized a-IGZO TFT has improved electrical characteristics with oxygen vacancies having the highest conductivity.
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Affiliation(s)
- Youngmin Han
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Dong Hyun Lee
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Eou-Sik Cho
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sang Jik Kwon
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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155
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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156
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Fu S, Park JH, Gao H, Zhang T, Ji X, Fu T, Sun L, Kong J, Yao J. Two-Terminal MoS 2 Memristor and the Homogeneous Integration with a MoS 2 Transistor for Neural Networks. NANO LETTERS 2023. [PMID: 37338212 DOI: 10.1021/acs.nanolett.2c05007] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
Memristors are promising candidates for constructing neural networks. However, their dissimilar working mechanism to that of the addressing transistors can result in a scaling mismatch, which may hinder efficient integration. Here, we demonstrate two-terminal MoS2 memristors that work with a charge-based mechanism similar to that in transistors, which enables the homogeneous integration with MoS2 transistors to realize one-transistor-one-memristor addressable cells for assembling programmable networks. The homogenously integrated cells are implemented in a 2 × 2 network array to demonstrate the enabled addressability and programmability. The potential for assembling a scalable network is evaluated in a simulated neural network using obtained realistic device parameters, which achieves over 91% pattern recognition accuracy. This study also reveals a generic mechanism and strategy that can be applied to other semiconducting devices for the engineering and homogeneous integration of memristive systems.
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Affiliation(s)
- Shuai Fu
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hongyan Gao
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xiang Ji
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tianda Fu
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Lu Sun
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Yao
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
- Institute for Applied Life Sciences (IALS), University of Massachusetts, Amherst, Massachusetts 01003, United States
- Department of Biomedical Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
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157
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Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, Shang D, Du L, Yang R, Yang W, Bai X, Shi D, Zhang G. Low power flexible monolayer MoS 2 integrated circuits. Nat Commun 2023; 14:3633. [PMID: 37336907 DOI: 10.1038/s41467-023-39390-9] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Accepted: 06/09/2023] [Indexed: 06/21/2023] Open
Abstract
Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS2 ICs in portable, wearable, and implantable electronics.
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Affiliation(s)
- Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Shuyu Wu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yutuo Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dashan Shang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, China.
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158
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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159
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Li H, Yang J, Li X, Luo Q, Cheng M, Feng W, Du R, Wang Y, Song L, Wen X, Wen Y, Xiao M, Liao L, Zhang Y, Shi J, He J. Bridging Synthesis and Controllable Doping of Monolayer 4 in. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211536. [PMID: 36929175 DOI: 10.1002/adma.202211536] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 03/07/2023] [Indexed: 06/09/2023]
Abstract
Epitaxial growth and controllable doping of wafer-scale atomically thin semiconductor single crystals are two central tasks to tackle the scaling challenge of transistors. Despite considerable efforts are devoted, addressing such crucial issues simultaneously under 2D confinement is yet to be realized. Here, an ingenious strategy to synthesize record-breaking 4 in. length Fe-doped transition-metal dichalcogenides (TMDCs) single crystals on industry-compatible c-plane sapphire without special miscut angle is designed. Atomically thin transistors with high electron mobility (≈146 cm2 V-1 s-1 ) and remarkable on/off current ratio (≈109 ) are fabricated based on 4 in. length Fe-MoS2 single crystals, due to the ultralow contact resistance (≈489 Ω µm). In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional alignment TMDCs domains (>99%). This work represents a substantial leap in terms of bridging synthesis and doping of wafer-scale 2D semiconductor single crystals, which should promote the further device downscaling and extension of Moore's law.
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Affiliation(s)
- Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Quankun Luo
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Lei Liao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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160
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Huang Z, Luo Z, Deng Z, Yang M, Gao W, Yao J, Zhao Y, Dong H, Zheng Z, Li J. Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. SMALL METHODS 2023; 7:e2201571. [PMID: 36932942 DOI: 10.1002/smtd.202201571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 02/20/2023] [Indexed: 06/09/2023]
Abstract
With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi2 Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W-1 , an excellent detectivity of 2.18 × 1012 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.
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Affiliation(s)
- Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Ziwen Deng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huafeng Dong
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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161
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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162
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Kuo DMT. Effects of Coulomb Blockade on the Charge Transport through the Topological States of Finite Armchair Graphene Nanoribbons and Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111757. [PMID: 37299660 DOI: 10.3390/nano13111757] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 05/26/2023] [Accepted: 05/28/2023] [Indexed: 06/12/2023]
Abstract
In this study, we investigate the charge transport properties of semiconducting armchair graphene nanoribbons (AGNRs) and heterostructures through their topological states (TSs), with a specific focus on the Coulomb blockade region. Our approach employs a two-site Hubbard model that takes into account both intra- and inter-site Coulomb interactions. Using this model, we calculate the electron thermoelectric coefficients and tunneling currents of serially coupled TSs (SCTSs). In the linear response regime, we analyze the electrical conductance (Ge), Seebeck coefficient (S), and electron thermal conductance (κe) of finite AGNRs. Our results reveal that at low temperatures, the Seebeck coefficient is more sensitive to many-body spectra than electrical conductance. Furthermore, we observe that the optimized S at high temperatures is less sensitive to electron Coulomb interactions than Ge and κe. In the nonlinear response regime, we observe a tunneling current with negative differential conductance through the SCTSs of finite AGNRs. This current is generated by electron inter-site Coulomb interactions rather than intra-site Coulomb interactions. Additionally, we observe current rectification behavior in asymmetrical junction systems of SCTSs of AGNRs. Notably, we also uncover the remarkable current rectification behavior of SCTSs of 9-7-9 AGNR heterostructure in the Pauli spin blockade configuration. Overall, our study provides valuable insights into the charge transport properties of TSs in finite AGNRs and heterostructures. We emphasize the importance of considering electron-electron interactions in understanding the behavior of these materials.
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Affiliation(s)
- David M T Kuo
- Department of Electrical Engineering, National Central University, Chungli 320, Taiwan, China
- Department of Physics, National Central University, Chungli 320, Taiwan, China
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163
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Zhang Q, Liu C, Zhou P. 2D materials readiness for the transistor performance breakthrough. iScience 2023; 26:106673. [PMID: 37216126 PMCID: PMC10192534 DOI: 10.1016/j.isci.2023.106673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/24/2023] Open
Abstract
As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.
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Affiliation(s)
- Qing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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164
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Benter S, Liu Y, Da Paixao Maciel R, Ong CS, Linnala L, Pan D, Irish A, Liu YP, Zhao J, Xu H, Eriksson O, Timm R, Mikkelsen A. Tuneable 2D surface Bismuth incorporation on InAs nanosheets. NANOSCALE 2023. [PMID: 37190857 DOI: 10.1039/d3nr00454f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates.
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Affiliation(s)
- Sandra Benter
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
| | - Yi Liu
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
| | | | - Chin Shen Ong
- Department of Physics and Astronomy, Materials Theory, Box 516, 751 20 Uppsala, Sweden
| | - Lassi Linnala
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
- Department of Physics and Astronomy, Materials Theory, Box 516, 751 20 Uppsala, Sweden
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Austin Irish
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
| | - Yen-Po Liu
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Hongqi Xu
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Olle Eriksson
- Department of Physics and Astronomy, Materials Theory, Box 516, 751 20 Uppsala, Sweden
| | - Rainer Timm
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
| | - Anders Mikkelsen
- NanoLund & Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
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165
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Ngo TD, Huynh T, Jung H, Ali F, Jeon J, Choi MS, Yoo WJ. Modulation of Contact Resistance of Dual-Gated MoS 2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2301400. [PMID: 37144526 PMCID: PMC10375162 DOI: 10.1002/advs.202301400] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Revised: 04/23/2023] [Indexed: 05/06/2023]
Abstract
Achieving low contact resistance (RC ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS2 devices are systematically analyzed as a function of top and bottom gate-voltages (VTG and VBG ). The semimetal contacts not only significantly reduce RC but also induce a strong dependence of RC on VTG , in sharp contrast to Ti contacts that only modulate RC by varying VBG . The anomalous behavior is attributed to the strongly modulated pseudo-junction resistance (Rjun ) by VTG , resulting from weak Fermi level pinning (FLP) of Sb contacts. In contrast, the resistances under both metallic contacts remain unchanged by VTG as metal screens the electric field from the applied VTG . Technology computer aided design simulations further confirm the contribution of VTG to Rjun , which improves overall RC of Sb-contacted MoS2 devices. Consequently, the Sb contact has a distinctive merit in dual-gated (DG) device structure, as it greatly reduces RC and enables effective gate control by both VBG and VTG . The results offer new insight into the development of DG 2D FETs with enhanced contact properties realized by using semimetals.
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Affiliation(s)
- Tien Dat Ngo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tuyen Huynh
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hanggyo Jung
- Department of Electrical and Electronics Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Fida Ali
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, Espoo, FI-00076, Finland
| | - Jongwook Jeon
- Department of Electrical and Electronics Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Min Sup Choi
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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166
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Dong MM, He H, Wang CK, Fu XX. Two-dimensional MoSi 2As 4-based field-effect transistors integrating switching and gas-sensing functions. NANOSCALE 2023; 15:9106-9115. [PMID: 37133349 DOI: 10.1039/d3nr00637a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Multifunctional nanoscale devices integrating multiple functions are of great importance for meeting the requirements of next-generation electronics. Herein, using first-principles calculations, we propose multifunctional devices based on the two-dimensional monolayer MoSi2As4, where a single-gate field-effect transistor (FET) and FET-type gas sensor are integrated. After introducing the optimizing strategies, such as underlap structures and dielectrics with a high dielectric constant (κ), we designed a 5 nm gate-length MoSi2As4 FET, whose performance fulfilled the key criteria of the International Technology Roadmap for Semiconductors (ITRS) for high-performance semiconductors. Under the joint adjustment of the underlap structure and high-κ dielectric material, the on/off ratio of the 5 nm gate-length FET reached up to 1.38 × 104. In addition, driven by the high-performance FET, the MoSi2As4-based FET-type gas sensor showed a sensitivity of 38% for NH3 and 46% for NO2. Moreover, the weak interaction between NH3 (NO2) and MoSi2As4 favored the recycling of the sensor. Furthermore, the sensitivity of the sensor could be effectively improved by the gate voltage, and was increased up to 67% (74%) for NH3 (NO2). Our work provides theoretical guidance for the fabrication of multifunctional devices combining a high-performance FET and sensitive gas sensor.
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Affiliation(s)
- Mi-Mi Dong
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Hang He
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Chuan-Kui Wang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Xiao-Xiao Fu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
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167
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Wali A, Ravichandran H, Das S. Hardware Trojans based on two-dimensional memtransistors. NANOSCALE HORIZONS 2023; 8:603-615. [PMID: 37021644 DOI: 10.1039/d2nh00568a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Hardware Trojans (HTs) have emerged as a major security threat for integrated circuits (ICs) owing to the involvement of untrustworthy actors in the globally distributed semiconductor supply chain. HTs are intentional malicious modifications, which remain undetectable through simple electrical measurements but can cause catastrophic failure in the functioning of ICs in mission critical applications. In this article, we show how two-dimensional (2D) material based in-memory computing elements such as memtransistors can be used as hardware Trojans. We found that logic gates based on 2D memtransistors can be made to malfunction by exploiting their inherent programming capabilities. While we use 2D memtransistor-based ICs as the testbed for our demonstration, the results are equally applicable to any state-of-the-art and emerging in-memory computing technologies.
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Affiliation(s)
- Akshay Wali
- Electrical Engineering and Computer Science, Penn State University, University Park, PA 16802, USA.
| | | | - Saptarshi Das
- Electrical Engineering and Computer Science, Penn State University, University Park, PA 16802, USA.
- Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA 16802, USA
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168
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Suzuki H, Kishibuchi M, Misawa M, Shimogami K, Ochiai S, Kokura T, Liu Y, Hashimoto R, Liu Z, Tsuruta K, Miyata Y, Hayashi Y. Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires. ACS NANO 2023; 17:9455-9467. [PMID: 37127554 DOI: 10.1021/acsnano.3c01608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long WxOy nanowires and grew monolayer WS2 nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS2 nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from WxOy nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Misaki Kishibuchi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kazuma Shimogami
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Soya Ochiai
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Takahiro Kokura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryoki Hashimoto
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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169
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Yang X, Li J, Song R, Zhao B, Tang J, Kong L, Huang H, Zhang Z, Liao L, Liu Y, Duan X, Duan X. Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale. NATURE NANOTECHNOLOGY 2023; 18:471-478. [PMID: 36941356 DOI: 10.1038/s41565-023-01342-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2022] [Accepted: 02/03/2023] [Indexed: 05/21/2023]
Abstract
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest for transistor applications. However, the fabrication of 2D transistors using traditional lithography or deposition processes often causes undesired damage and contamination to the atomically thin lattices, partially degrading the device performance and leading to large variation between devices. Here we demonstrate a highly reproducible van der Waals integration process for wafer-scale fabrication of high-performance transistors and logic circuits from monolayer MoS2 grown by chemical vapour deposition. By designing a quartz/polydimethylsiloxane semirigid stamp and adapting a standard photolithography mask-aligner for the van der Waals integration process, our strategy ensures a uniform mechanical force and a bubble-free wrinkle-free interface during the pickup/release process, which is crucial for robust van der Waals integration over a large area. Our scalable van der Waals integration process allows damage-free integration of high-quality contacts on monolayer MoS2 at the wafer scale and enables high-performance 2D transistors. The van-der-Waals-contacted devices display an atomically clean interface with much smaller threshold variation, higher on-current, smaller off-current, larger on/off ratio and smaller subthreshold swing than those fabricated with conventional lithography. The approach is further used to create various logic gates and circuits, including inverters with a voltage gain of up to 585, and logic OR gates, NAND gates, AND gates and half-adder circuits. This scalable van der Waals integration method may be useful for reliable integration of 2D semiconductors with mature industry technology, facilitating the technological transition of 2D semiconductor electronics.
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Affiliation(s)
- Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Jingmei Tang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lingan Kong
- School of Physics and Electronics, Hunan University, Changsha, China
| | - Hao Huang
- School of Physics and Electronics, Hunan University, Changsha, China
- School of Resources, Environments and Materials, Guangxi University, Nanning, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lei Liao
- School of Physics and Electronics, Hunan University, Changsha, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Changsha, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
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170
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Wu Y, Xin Z, Zhang Z, Wang B, Peng R, Wang E, Shi R, Liu Y, Guo J, Liu K, Liu K. All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS 2 Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210735. [PMID: 36652589 DOI: 10.1002/adma.202210735] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 01/08/2023] [Indexed: 05/05/2023]
Abstract
Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect-free interfaces are of vital importance for building nanoscale harsh-environment-resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode-channel interfaces. Here, harsh-environment-resistant MoS2 transistors are developed by engineering electrode-channel interfaces with an all-transfer of van der Waals electrodes. The delivered defect-free, graphene-buffered electrodes keep the electrode-channel interfaces intact and robust. As a result, the as-fabricated MoS2 devices have reduced Schottky barrier heights, leading to a very large on-state current and high carrier mobility. More importantly, the defect-free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS2 and the intercalation of water molecules at the electrode-MoS2 interfaces. This enables high resistances of MoS2 devices with all-transfer electrodes to various harsh environments, including humid, oxidizing, and high-temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode-channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh-environment-resistant devices.
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Affiliation(s)
- Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yiqun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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171
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Kuo DMT. Effects of metallic electrodes on the thermoelectric properties of zigzag graphene nanoribbons with periodic vacancies. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:305301. [PMID: 37068484 DOI: 10.1088/1361-648x/accdac] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 04/17/2023] [Indexed: 06/19/2023]
Abstract
We theoretically analyze the thermoelectric properties of graphene quantum dot arrays (GQDAs) with line- or surface-contacted metal electrodes. Such GQDAs are realized as zigzag graphene nanoribbons (ZGNRs) with periodic vacancies. Gaps and minibands are formed in these GQDAs, which can have metallic and semiconducting phases. The electronic states of the first conduction (valence) miniband with nonlinear dispersion may have long coherent lengths along the zigzag edge direction. With line-contacted metal electrodes, the GQDAs have the characteristics of serially coupled quantum dots (SCQDs) if the armchair edge atoms of the ZGNRs are coupled to the electrodes. By contrast, the GQDAs have the characteristics of parallel quantum dots if the zigzag edge atoms are coupled to the electrodes. The maximum thermoelectric power factors of SCQDs with line-contacted electrodes of Cu, Au, Pt, Pd, or Ti at room temperature were similar or greater than 0.186 nW K-1; their figures of merit were greater than three. GQDAs with line-contacted metal electrodes have much better thermoelectric performance than surface contacted metal electrodes.
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Affiliation(s)
- David M T Kuo
- Department of Electrical Engineering and Department of Physics, National Central University, Chungli 320, Taiwan
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172
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Schranghamer TF, Sakib NU, Sadaf MUK, Subbulakshmi Radhakrishnan S, Pendurthi R, Agyapong AD, Stepanoff SP, Torsi R, Chen C, Redwing JM, Robinson JA, Wolfe DE, Mohney SE, Das S. Ultrascaled Contacts to Monolayer MoS 2 Field Effect Transistors. NANO LETTERS 2023; 23:3426-3434. [PMID: 37058411 DOI: 10.1021/acs.nanolett.3c00466] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 μA/μm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.
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Affiliation(s)
- Thomas F Schranghamer
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Najam U Sakib
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Muhtasim Ul Karim Sadaf
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shiva Subbulakshmi Radhakrishnan
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rahul Pendurthi
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ama Duffie Agyapong
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Sergei P Stepanoff
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Riccardo Torsi
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chen Chen
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Douglas E Wolfe
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Applied Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Suzanne E Mohney
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
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173
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Yang Z, Li Z, Yang Y, Zhang Q, Xie H, Wang J, Świerczek K, Zhao H. Well-Dispersed Fe Nanoclusters for Effectively Increasing the Initial Coulombic Efficiency of the SiO Anode. ACS NANO 2023; 17:7806-7812. [PMID: 37023331 DOI: 10.1021/acsnano.3c00709] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
An efficient surface modification strategy is proposed to significantly increase the initial Coulombic efficiency (ICE) of SiO anode material. The SiO@Fe material with the Fe nanocluster homogeneously decorating on the SiO surface is successfully prepared by a chemical vapor deposition process. The well-dispersed Fe nanoclusters realize an Ohmic contact with lithium silicates, the commonly regarded irreversible lithiation product, which effectively lowers the electron conduction barriers and promotes the concomitant lithium-ion release of the lithium silicates upon the delithiation process, increasing the ICE of the SiO anode. The prepared SiO@Fe exhibits a much higher ICE of 87.2% compared to 64.4% of pristine SiO, with the largest increment (23%) never reported, except for the prelithiation, and delivers significantly enhanced cycling and rate performance. These findings provide an effective way to convert the "inert" phase to "active" which essentially increases the ICE of the electrode.
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Affiliation(s)
- Zhao Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhaolin Li
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Municipal Key Lab for Advanced Energy Materials and Technologies, Beijing 100083, China
| | - Yaozong Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Qian Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hongliang Xie
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jie Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Municipal Key Lab for Advanced Energy Materials and Technologies, Beijing 100083, China
| | - Konrad Świerczek
- Faculty of Energy and Fuels, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Krakow, Poland
| | - Hailei Zhao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Municipal Key Lab for Advanced Energy Materials and Technologies, Beijing 100083, China
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174
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Wang Z, Nie Y, Ou H, Chen D, Cen Y, Liu J, Wu D, Hong G, Li B, Xing G, Zhang W. Electronic and Optoelectronic Monolayer WSe 2 Devices via Transfer-Free Fabrication Method. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1368. [PMID: 37110953 PMCID: PMC10145331 DOI: 10.3390/nano13081368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Revised: 04/06/2023] [Accepted: 04/12/2023] [Indexed: 06/19/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe2 film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe2 film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe2. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe2 FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm2 V-1 s-1 at room temperature. In addition, the as-fabricated transfer-free devices can maintain their original performance after weeks without obvious device decay. The transfer-free WSe2-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 104 A W-1 at Vds = 1 V and Vg = -60 V and a maximum detectivity value of ~1.2 × 1013 Jones. Our study presents a robust pathway for the growth of high-quality monolayer TMDs thin films and large-scale device fabrication.
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Affiliation(s)
- Zixuan Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR 999078, China
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Yecheng Nie
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Haohui Ou
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Dao Chen
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Yingqian Cen
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Di Wu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Guo Hong
- Department of Materials Science and Engineering & Center of Super-Diamond and Advanced Films, College of Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR 999077, China
| | - Benxuan Li
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- Electrical Engineering Division, Engineering Department, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR 999078, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
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175
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Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, Watanabe K, Taniguchi T, Bai X, Shi D, Du L, Zhang G. Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance. NANO LETTERS 2023; 23:2764-2770. [PMID: 37010357 DOI: 10.1021/acs.nanolett.3c00031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS2 FETs. The fabricated 9 nm channel MoS2 FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at VDS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 107 and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS2 FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.
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Affiliation(s)
- Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xudan Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yancong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jieying Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Kenji Watanabe
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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176
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Boehm A, Fonseca JJ, Thürmer K, Sugar JD, Spataru CD, Robinson JT, Ohta T. Engineering of Nanoscale Heterogeneous Transition Metal Dichalcogenide-Au Interfaces. NANO LETTERS 2023; 23:2792-2799. [PMID: 37010816 DOI: 10.1021/acs.nanolett.3c00080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Engineering the transition metal dichalcogenide (TMD)-metal interface is critical for the development of two-dimensional semiconductor devices. By directly probing the electronic structures of WS2-Au and WSe2-Au interfaces with high spatial resolution, we delineate nanoscale heterogeneities in the composite systems that give rise to local Schottky barrier height modulations. Photoelectron spectroscopy reveals large variations (>100 meV) in TMD work function and binding energies for the occupied electronic states. Characterization of the composite systems with electron backscatter diffraction and scanning tunneling microscopy leads us to attribute these heterogeneities to differing crystallite orientations in the Au contact, suggesting an inherent role of the metal microstructure in contact formation. We then leverage our understanding to develop straightforward Au processing techniques to form TMD-Au interfaces with reduced heterogeneity. Our findings illustrate the sensitivity of TMDs' electronic properties to metal contact microstructure and the viability of tuning the interface through contact engineering.
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Affiliation(s)
- Alex Boehm
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Jose J Fonseca
- Jacobs Technology Contractor at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Konrad Thürmer
- Sandia National Laboratories, Livermore, California 94550, United States
| | - Joshua D Sugar
- Sandia National Laboratories, Livermore, California 94550, United States
| | - Catalin D Spataru
- Sandia National Laboratories, Livermore, California 94550, United States
| | | | - Taisuke Ohta
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
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177
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Xie Y, Yu C, Ni L, Yu J, Zhang Y, Qiu J. Carbon-Hybridized Hydroxides for Energy Conversion and Storage: Interface Chemistry and Manufacturing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209652. [PMID: 36575967 DOI: 10.1002/adma.202209652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 12/18/2022] [Indexed: 06/17/2023]
Abstract
Carbon-hybridized hydroxides (CHHs) have been intensively investigated for uses in the energy conversion/storage fields. Nevertheless, the intrinsic structure-activity relationships between carbon and hydroxides within CHHs are still blurry, which hinders the fine modulation of CHHs in terms of practical applications to some degree. This review aims to figure out the intrinsic role of carbon materials in CHHs with a focus on the interface chemistry and the engineering strategy in-between two components. The fundamental effects of the carbon materials in enhancing the charge/mass transfer kinetics are first analyzed, particularly the extra electron pathways for fast charge transfer and the anchoring sites for boosting the mass transfer. Subsequently, the surface-guided/confined effects of carbon materials in CHHs to modify the morphology and tailor the hydroxides, and functional heterojunction for regulating the inner electronic structure are decoupled. The methods to efficiently construct a stable yet robust solid-solid heterointerface are summarized, including oxygen functional groups engrafting, topological defective sites construction and heteroatom incorporation to activate the inert carbon surface. The smart CHHs in some typical energy applications are demonstrated. Additionally, the methodologies that can reveal the hybridization electron configuration between two components are summed up. At last, the perspective and challenges faced by the CHHs for energy-related applications are outlined.
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Affiliation(s)
- Yuanyang Xie
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Chang Yu
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Lin Ni
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Jinhe Yu
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Yafang Zhang
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Jieshan Qiu
- State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
- College of Chemical Engineering, State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
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178
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Jiang J, Xu L, Qiu C, Peng LM. Ballistic two-dimensional InSe transistors. Nature 2023; 616:470-475. [PMID: 36949203 DOI: 10.1038/s41586-023-05819-w] [Citation(s) in RCA: 40] [Impact Index Per Article: 40.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 02/10/2023] [Indexed: 03/24/2023]
Abstract
The International Roadmap for Devices and Systems (IRDS) forecasts that, for silicon-based metal-oxide-semiconductor (MOS) field-effect transistors (FETs), the scaling of the gate length will stop at 12 nm and the ultimate supply voltage will not decrease to less than 0.6 V (ref. 1). This defines the final integration density and power consumption at the end of the scaling process for silicon-based chips. In recent years, two-dimensional (2D) layered semiconductors with atom-scale thicknesses have been explored as potential channel materials to support further miniaturization and integrated electronics. However, so far, no 2D semiconductor-based FETs have exhibited performances that can surpass state-of-the-art silicon FETs. Here we report a FET with 2D indium selenide (InSe) with high thermal velocity as channel material that operates at 0.5 V and achieves record high transconductance of 6 mS μm-1 and a room-temperature ballistic ratio in the saturation region of 83%, surpassing those of any reported silicon FETs. An yttrium-doping-induced phase-transition method is developed for making ohmic contacts with InSe and the InSe FET is scaled down to 10 nm in channel length. Our InSe FETs can effectively suppress short-channel effects with a low subthreshold swing (SS) of 75 mV per decade and drain-induced barrier lowering (DIBL) of 22 mV V-1. Furthermore, low contact resistance of 62 Ω μm is reliably extracted in 10-nm ballistic InSe FETs, leading to a smaller intrinsic delay and much lower energy-delay product (EDP) than the predicted silicon limit.
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Affiliation(s)
- Jianfeng Jiang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Chenguang Qiu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
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179
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Tan C, Yu M, Tang J, Gao X, Yin Y, Zhang Y, Wang J, Gao X, Zhang C, Zhou X, Zheng L, Liu H, Jiang K, Ding F, Peng H. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 2023; 616:66-72. [PMID: 36949195 DOI: 10.1038/s41586-023-05797-z] [Citation(s) in RCA: 31] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2022] [Accepted: 02/06/2023] [Indexed: 03/24/2023]
Abstract
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors1-5, but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V-1 s-1, ultralow off-state current (IOFF) down to about 1 pA μm-1, high on/off current ratios (ION/IOFF) up to 108 and high on-state current (ION) up to 830 μA μm-1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)6. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore's law.
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Affiliation(s)
- Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Mengshi Yu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Junchuan Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xiaoyin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Yuling Yin
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea
| | - Yichi Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Jingyue Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xinyu Gao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, China
| | - Congcong Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xuehan Zhou
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Liming Zheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
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180
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Li Z, Zheng Y, Li G, Wang H, Zhu W, Wang H, Chen Z, Yuan Y, Zeng XC, Wu Y. Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy via Engineering MoS 2-Metal van der Waals Contact. J Phys Chem Lett 2023; 14:2940-2949. [PMID: 36930804 DOI: 10.1021/acs.jpclett.3c00056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The Schottky barrier (SB) in the ultraclean van der Waals contact between two-dimensional (2D) MoS2 and three-dimensional (3D) indium (In) strikingly deviates from the Schottky-Mott limit (SML). Herein, on the basis of first-principles calculation, the origin of the SB deviation is brought to bear, as well as a strategy for mitigating the SB deviation. In light of the good agreement between the SB and the corrected SB by interface potential difference (ΔV) and Fermi -level shift (ΔEF) based on the SML, the SB deviation is attributed to the combined effects of ΔV and ΔEF. Furthermore, when a Au, Sc, or Ti thin film is coated on the back side of In, the SB deviation and the sum of ΔV and ΔEF decrease similarly. Importantly, in the Ti coating situation, the SB is reduced to 0.12 eV, notably smaller than the value of 0.30 eV in the Au coating case. This interface engineering can be generalized to regulate the SB between a 2D semiconductor and a 3D alloy.
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Affiliation(s)
- Zhongjun Li
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, China
| | - Yahui Zheng
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Guojun Li
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Hanxi Wang
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Weiduo Zhu
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Haidi Wang
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Zhao Chen
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
| | - Yupeng Yuan
- School of Materials Science and Engineering, Anhui University, Hefei 2300601, Anhui, China
| | - Xiao Cheng Zeng
- Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China
- Department of Chemistry, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States
| | - Yucheng Wu
- School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China
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181
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Cicirello G, Wang M, Sam QP, Hart JL, Williams NL, Yin H, Cha JJ, Wang J. Two-Dimensional Violet Phosphorus P 11: A Large Band Gap Phosphorus Allotrope. J Am Chem Soc 2023; 145:8218-8230. [PMID: 36996286 DOI: 10.1021/jacs.3c01766] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/01/2023]
Abstract
The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.
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Affiliation(s)
- Gary Cicirello
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
| | - Mengjing Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Quynh P Sam
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - James L Hart
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Natalie L Williams
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Huabing Yin
- Institute for Computational Materials Science, Joint Center for Theoretical Physics, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Jian Wang
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
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182
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Luo Y, Abidian MR, Ahn JH, Akinwande D, Andrews AM, Antonietti M, Bao Z, Berggren M, Berkey CA, Bettinger CJ, Chen J, Chen P, Cheng W, Cheng X, Choi SJ, Chortos A, Dagdeviren C, Dauskardt RH, Di CA, Dickey MD, Duan X, Facchetti A, Fan Z, Fang Y, Feng J, Feng X, Gao H, Gao W, Gong X, Guo CF, Guo X, Hartel MC, He Z, Ho JS, Hu Y, Huang Q, Huang Y, Huo F, Hussain MM, Javey A, Jeong U, Jiang C, Jiang X, Kang J, Karnaushenko D, Khademhosseini A, Kim DH, Kim ID, Kireev D, Kong L, Lee C, Lee NE, Lee PS, Lee TW, Li F, Li J, Liang C, Lim CT, Lin Y, Lipomi DJ, Liu J, Liu K, Liu N, Liu R, Liu Y, Liu Y, Liu Z, Liu Z, Loh XJ, Lu N, Lv Z, Magdassi S, Malliaras GG, Matsuhisa N, Nathan A, Niu S, Pan J, Pang C, Pei Q, Peng H, Qi D, Ren H, Rogers JA, Rowe A, Schmidt OG, Sekitani T, Seo DG, Shen G, Sheng X, Shi Q, Someya T, Song Y, Stavrinidou E, Su M, Sun X, Takei K, Tao XM, Tee BCK, Thean AVY, Trung TQ, Wan C, Wang H, Wang J, Wang M, Wang S, Wang T, Wang ZL, Weiss PS, Wen H, Xu S, Xu T, Yan H, Yan X, Yang H, Yang L, Yang S, Yin L, Yu C, Yu G, Yu J, Yu SH, Yu X, Zamburg E, Zhang H, Zhang X, Zhang X, Zhang X, Zhang Y, Zhang Y, Zhao S, Zhao X, Zheng Y, Zheng YQ, Zheng Z, Zhou T, Zhu B, Zhu M, Zhu R, Zhu Y, Zhu Y, Zou G, Chen X. Technology Roadmap for Flexible Sensors. ACS NANO 2023; 17:5211-5295. [PMID: 36892156 PMCID: PMC11223676 DOI: 10.1021/acsnano.2c12606] [Citation(s) in RCA: 194] [Impact Index Per Article: 194.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.
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Affiliation(s)
- Yifei Luo
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
- Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Mohammad Reza Abidian
- Department of Biomedical Engineering, University of Houston, Houston, Texas 77024, United States
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Anne M Andrews
- Department of Chemistry and Biochemistry, California NanoSystems Institute, and Department of Psychiatry and Biobehavioral Sciences, Semel Institute for Neuroscience and Human Behavior, and Hatos Center for Neuropharmacology, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Markus Antonietti
- Colloid Chemistry Department, Max Planck Institute of Colloids and Interfaces, 14476 Potsdam, Germany
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
| | - Magnus Berggren
- Laboratory of Organic Electronics, Department of Science and Technology, Campus Norrköping, Linköping University, 83 Linköping, Sweden
- Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC), SE-100 44 Stockholm, Sweden
| | - Christopher A Berkey
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94301, United States
| | - Christopher John Bettinger
- Department of Biomedical Engineering and Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Jun Chen
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Peng Chen
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637457, Singapore
| | - Wenlong Cheng
- Nanobionics Group, Department of Chemical and Biological Engineering, Monash University, Clayton, Australia, 3800
- Monash Institute of Medical Engineering, Monash University, Clayton, Australia3800
| | - Xu Cheng
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, PR China
| | - Seon-Jin Choi
- Division of Materials of Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Alex Chortos
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Canan Dagdeviren
- Media Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Reinhold H Dauskardt
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94301, United States
| | - Chong-An Di
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Michael D Dickey
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27606, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering and Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yin Fang
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637457, Singapore
| | - Jianyou Feng
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, and Laboratory of Advanced Materials, Fudan University, Shanghai 200438, PR China
| | - Xue Feng
- Laboratory of Flexible Electronics Technology, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Huajian Gao
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Wei Gao
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, California, 91125, United States
| | - Xiwen Gong
- Department of Chemical Engineering, Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Science, Applied Physics Program, and Macromolecular Science and Engineering Program, University of Michigan, Ann Arbor, Michigan, 48109 United States
| | - Chuan Fei Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiaojun Guo
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Martin C Hartel
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zihan He
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - John S Ho
- Institute for Health Innovation and Technology, National University of Singapore, Singapore 117599, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- The N.1 Institute for Health, National University of Singapore, Singapore 117456, Singapore
| | - Youfan Hu
- School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Qiyao Huang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Yu Huang
- Department of Materials Science and Engineering, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Fengwei Huo
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, PR China
| | - Muhammad M Hussain
- mmh Labs, Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Engineering (POSTECH), Pohang, Gyeong-buk 37673, Korea
| | - Chen Jiang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Xingyu Jiang
- Department of Biomedical Engineering, Southern University of Science and Technology, No 1088, Xueyuan Road, Xili, Nanshan District, Shenzhen, Guangdong 518055, PR China
| | - Jiheong Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Daniil Karnaushenko
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz 09126, Germany
| | | | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Il-Doo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Dmitry Kireev
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Lingxuan Kong
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637457, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
- NUS Graduate School-Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore 119077, Singapore
| | - Nae-Eung Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, Republic of Korea
| | - Pooi See Lee
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE), Campus for Research Excellence and Technological Enterprise (CREATE), Singapore 138602, Singapore
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, Research Institute of Advanced Materials, Seoul National University, Soft Foundry, Seoul 08826, Republic of Korea
- Interdisciplinary Program in Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Fengyu Li
- College of Chemistry and Materials Science, Jinan University, Guangzhou, Guangdong 510632, China
| | - Jinxing Li
- Department of Biomedical Engineering, Department of Electrical and Computer Engineering, Neuroscience Program, BioMolecular Science Program, and Institute for Quantitative Health Science and Engineering, Michigan State University, East Lansing, Michigan 48823, United States
| | - Cuiyuan Liang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China
| | - Chwee Teck Lim
- Department of Biomedical Engineering, National University of Singapore, Singapore 117583, Singapore
- Mechanobiology Institute, National University of Singapore, Singapore 117411, Singapore
- Institute for Health Innovation and Technology, National University of Singapore, Singapore 119276, Singapore
| | - Yuanjing Lin
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Darren J Lipomi
- Department of Nano and Chemical Engineering, University of California, San Diego, La Jolla, California 92093-0448, United States
| | - Jia Liu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Boston, Massachusetts, 02134, United States
| | - Kai Liu
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, PR China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, PR China
| | - Ren Liu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Boston, Massachusetts, 02134, United States
| | - Yuxin Liu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
- Department of Biomedical Engineering, N.1 Institute for Health, Institute for Health Innovation and Technology (iHealthtech), National University of Singapore, Singapore 119077, Singapore
| | - Yuxuan Liu
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Zhiyuan Liu
- Neural Engineering Centre, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China 518055
| | - Zhuangjian Liu
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
| | - Nanshu Lu
- Department of Aerospace Engineering and Engineering Mechanics, Department of Electrical and Computer Engineering, Department of Mechanical Engineering, Department of Biomedical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Zhisheng Lv
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
| | - Shlomo Magdassi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
| | - George G Malliaras
- Electrical Engineering Division, Department of Engineering, University of Cambridge CB3 0FA, Cambridge United Kingdom
| | - Naoji Matsuhisa
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Arokia Nathan
- Darwin College, University of Cambridge, Cambridge CB3 9EU, United Kingdom
| | - Simiao Niu
- Department of Biomedical Engineering, Rutgers University, Piscataway, New Jersey 08854, United States
| | - Jieming Pan
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Changhyun Pang
- School of Chemical Engineering and Samsung Advanced Institute for Health Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Qibing Pei
- Department of Materials Science and Engineering, Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Huisheng Peng
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, and Laboratory of Advanced Materials, Fudan University, Shanghai 200438, PR China
| | - Dianpeng Qi
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China
| | - Huaying Ren
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California, 90095, United States
| | - John A Rogers
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Department of Mechanical Engineering, Department of Biomedical Engineering, Departments of Electrical and Computer Engineering and Chemistry, and Department of Neurological Surgery, Northwestern University, Evanston, Illinois 60208, United States
| | - Aaron Rowe
- Becton, Dickinson and Company, 1268 N. Lakeview Avenue, Anaheim, California 92807, United States
- Ready, Set, Food! 15821 Ventura Blvd #450, Encino, California 91436, United States
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz 09107, Germany
- Nanophysics, Faculty of Physics, TU Dresden, Dresden 01062, Germany
| | - Tsuyoshi Sekitani
- The Institute of Scientific and Industrial Research (SANKEN), Osaka University, Osaka, Japan 5670047
| | - Dae-Gyo Seo
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xing Sheng
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Center for Flexible Electronics Technology, and IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, China
| | - Qiongfeng Shi
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yanlin Song
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing, Beijing 100190, China
| | - Eleni Stavrinidou
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-601 74 Norrkoping, Sweden
| | - Meng Su
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing, Beijing 100190, China
| | - Xuemei Sun
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, and Laboratory of Advanced Materials, Fudan University, Shanghai 200438, PR China
| | - Kuniharu Takei
- Department of Physics and Electronics, Osaka Metropolitan University, Sakai, Osaka 599-8531, Japan
| | - Xiao-Ming Tao
- Research Institute for Intelligent Wearable Systems, School of Fashion and Textiles, Hong Kong Polytechnic University, Hong Kong, China
| | - Benjamin C K Tee
- Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- iHealthtech, National University of Singapore, Singapore 119276, Singapore
| | - Aaron Voon-Yew Thean
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Singapore Hybrid-Integrated Next-Generation μ-Electronics Centre (SHINE), Singapore 117583, Singapore
| | - Tran Quang Trung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, Republic of Korea
| | - Changjin Wan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Huiliang Wang
- Department of Biomedical Engineering, University of Texas at Austin, Austin, Texas 78712, United States
| | - Joseph Wang
- Department of Nanoengineering, University of California, San Diego, California 92093, United States
| | - Ming Wang
- Frontier Institute of Chip and System, State Key Laboratory of Integrated Chip and Systems, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
- the Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No.701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Sihong Wang
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois, 60637, United States
| | - Ting Wang
- State Key Laboratory of Organic Electronics and Information Displays and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
| | - Paul S Weiss
- California NanoSystems Institute, Department of Chemistry and Biochemistry, Department of Bioengineering, and Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Hanqi Wen
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637457, Singapore
- Institute of Flexible Electronics Technology of THU, Jiaxing, Zhejiang, China 314000
| | - Sheng Xu
- Department of Nanoengineering, Department of Electrical and Computer Engineering, Materials Science and Engineering Program, and Department of Bioengineering, University of California San Diego, La Jolla, California, 92093, United States
| | - Tailin Xu
- School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen, Guangdong, 518060, PR China
| | - Hongping Yan
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
| | - Xuzhou Yan
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, PR China
| | - Hui Yang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, China, 300072
| | - Le Yang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
- Department of Materials Science and Engineering, National University of Singapore (NUS), 9 Engineering Drive 1, #03-09 EA, Singapore 117575, Singapore
| | - Shuaijian Yang
- School of Biomedical Sciences, Faculty of Biological Sciences, University of Leeds, Leeds, LS2 9JT, United Kingdom
| | - Lan Yin
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, and Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Department of Biomedical Engineering, Department of Material Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - Guihua Yu
- Materials Science and Engineering Program and Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas, 78712, United States
| | - Jing Yu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Shu-Hong Yu
- Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Hefei National Research Center for Physical Science at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Xinge Yu
- Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, China
| | - Evgeny Zamburg
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Singapore Hybrid-Integrated Next-Generation μ-Electronics Centre (SHINE), Singapore 117583, Singapore
| | - Haixia Zhang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication; Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Xiangyu Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Singapore Hybrid-Integrated Next-Generation μ-Electronics Centre (SHINE), Singapore 117583, Singapore
| | - Xiaosheng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xueji Zhang
- School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen, Guangdong 518060, PR China
| | - Yihui Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics; Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, PR China
| | - Yu Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Singapore Hybrid-Integrated Next-Generation μ-Electronics Centre (SHINE), Singapore 117583, Singapore
| | - Siyuan Zhao
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Boston, Massachusetts, 02134, United States
| | - Xuanhe Zhao
- Department of Mechanical Engineering, Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, United States
| | - Yuanjin Zheng
- Center for Integrated Circuits and Systems, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yu-Qing Zheng
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication; School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Zijian Zheng
- Department of Applied Biology and Chemical Technology, Faculty of Science, Research Institute for Intelligent Wearable Systems, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Tao Zhou
- Center for Neural Engineering, Department of Engineering Science and Mechanics, The Huck Institutes of the Life Sciences, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Ming Zhu
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
| | - Rong Zhu
- Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Yangzhi Zhu
- Terasaki Institute for Biomedical Innovation, Los Angeles, California, 90064, United States
| | - Yong Zhu
- Department of Mechanical and Aerospace Engineering, Department of Materials Science and Engineering, and Department of Biomedical Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Guijin Zou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Xiaodong Chen
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore
- Innovative Center for Flexible Devices (iFLEX), Max Planck-NTU Joint Laboratory for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
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183
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Canton-Vitoria R, Hotta T, Xue M, Zhang S, Kitaura R. Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O 2 Etching. JACS AU 2023; 3:775-784. [PMID: 37006761 PMCID: PMC10052231 DOI: 10.1021/jacsau.2c00536] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 12/17/2022] [Accepted: 12/19/2022] [Indexed: 06/18/2023]
Abstract
Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O2 etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS2. We also successfully applied this process for synthesizing WS2, MoSe2, and WSe2 nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS2, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.
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Affiliation(s)
- Ruben Canton-Vitoria
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
- Theoretical
and Physical Chemistry Institute, National
Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 116 35, Greece
| | - Takato Hotta
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Mengsong Xue
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Shaochun Zhang
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Ryo Kitaura
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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184
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Zhang S, Maruyama M, Okada S, Xue M, Watanabe K, Taniguchi T, Hashimoto K, Miyata Y, Canton-Vitoria R, Kitaura R. Observation of the photovoltaic effect in a van der Waals heterostructure. NANOSCALE 2023; 15:5948-5953. [PMID: 36883438 DOI: 10.1039/d2nr06616e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
van der Waals (vdW) heterostructures, which can be assembled with various two-dimensional materials, provide a versatile platform for exploring emergent phenomena. Here, we report an observation of the photovoltaic effect in a WS2/MoS2 vdW heterostructure. Light excitation of WS2/MoS2 at a wavelength of 633 nm yields a photocurrent without applying bias voltages, and the excitation power dependence of the photocurrent shows characteristic crossover from a linear to square root dependence. Photocurrent mapping has clearly shown that the observed photovoltaic effect arises from the WS2/MoS2 region, not from Schottky junctions at electrode contacts. Kelvin probe microscopy observations show no slope in the electrostatic potential, excluding the possibility that the photocurrent originates from an unintentionally formed built-in potential.
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Affiliation(s)
- Shaochun Zhang
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571, Japan
| | - Mengsong Xue
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | | | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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185
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Hu Y, Hu X, Wang Y, Lu C, Krasheninnikov AV, Chen Z, Sun L. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX 3 (X = I, Br)/2D Metal Contacts. J Phys Chem Lett 2023; 14:2807-2815. [PMID: 36912604 DOI: 10.1021/acs.jpclett.3c00354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
CrX3 (X = I, Br) monolayers exhibit outstanding performance in spintronic devices. However, the Schottky barrier at the CrX3/electrode interface severely impedes the charge injection efficiency. Herein, we propose two-dimensional (2D) metals as electrodes to form van der Waals (vdW) contact with CrX3 monolayers and systematically explore the contact properties of CrX3/metal by density functional theory (DFT) calculations. The results demonstrate that the strongly suppressed Fermi level pinning (FLP) effect and the wide-range tunable Schottky barrier can be achieved in CrX3/metal contacts. Specifically, the n-type and the p-type Schottky contacts can be realized in CrX3/metal contacts by choosing 2D metal electrodes with different work functions. Importantly, the pinning factors for CrX3/metal contacts are exceptionally larger than other commonly studied 2D semiconductors, indicating the strongly suppressed FLP in CrX3/metal contacts, which leads to the wide-range tunable Schottky barrier. Our findings provide guidance to the choice of electrodes and promote the development of CrX3-based spin devices.
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Affiliation(s)
- Yanmei Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, Puerto Rico 00931, United States
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China
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186
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Chung CH, Chen HR, Ho MJ, Lin CY. WS 2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study. ACS OMEGA 2023; 8:10419-10425. [PMID: 36969417 PMCID: PMC10034831 DOI: 10.1021/acsomega.2c08275] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type of partially sulfur-replaced edge contact metal/WSX/WS2 in order to lower the Schottky barrier height and in turn reduce the contact resistance. Here, the sulfur replacements produce a segment of the metamaterial WSX (X = P, As, F, and Cl), using group V or halogen atoms to substitute sulfur atoms on one side of a WS2 monolayer. We further compare the effects of such sulfur replacements on the interface metallization and bonding. Such WSX-buffered contacts exhibit contact resistances as low as 142 and 173 Ω·μm for the p-type Pt/WSP/WS2 and n-type Ti/WSCl/WS2 edge contacts, respectively. Moreover, ab initio molecular dynamics is employed to observe a stable standalone WSX monolayer at room temperature.
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187
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Kumar J, Shrivastava M. Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal-TMDs' Interface Chemistry. ACS OMEGA 2023; 8:10176-10184. [PMID: 36969396 PMCID: PMC10034985 DOI: 10.1021/acsomega.2c07489] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
The contact resistance of the transition metal dichalcogenide (TMD) devices is not comparable to that of their silicon counterparts, probably due to a lack of clarity in their interface chemistry. Looking beyond the conventional Schottky-Mott rule, the metal chalcogen orbital overlaps, tunnel barrier, and metal-induced gap states (MIGSs) are crucial factors determining different metals' contact properties with TMDs. Exploring their properties helps TMDs' contact resistance engineering, driven mainly by their orbital overlaps and perturbing parameters. This work presents the interface chemistry of TMDs (MoS2, MoSe2, WS2, and WSe2) with different metals (Au, Cr, Ni, and Pd) in detail using density functional theory computations. Additionally, the work discusses the role of the chalcogen vacancy and interstitial defects in the metal-TMD interactions and corresponding MIGS features. The investigations reveal that Au does not show any significant MIGS due to its weak interactions with all the TMDs. However, other investigated metals have a strong affinity with TMDs, making significant MIGS contributions. All the metals offer n-type doping characteristics to TMDs due to valence charge transfer from the metals toward TMDs. The chalcogen vacancy boosts the orbital overlaps of the TMDs with all the metals. The vacancy reduces metal-TMD interfacial distance, which can be a promising technique to reduce the tunnel barrier and contact resistance. The MIGS and defect-induced gap states (DIGSs) reflect the possibility of Fermi-level pinning in the TMDs' contacts with Cr, Ni, and Pd. Besides, the work discloses that the chalcogen vacancy converts an n-type Pd-TMD interface into p-type due to reverse charge transfer after the vacancy. Chalcogen interstitial impurity also helps with contact resistance engineering for some metal-TMD systems by reducing the bond distance of the metal TMDs. Our study highlights the possibility of defect-assisted and MIGS-based contact engineering at the metal-TMD interfaces.
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188
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Canton-Vitoria R, Sato K, Motooka Y, Toyokuni S, Liu Z, Kitaura R. Field-effect transistor antigen/antibody-TMDs sensors for the detection of COVID-19 samples. NANOSCALE 2023; 15:4570-4580. [PMID: 36762571 DOI: 10.1039/d2nr06630k] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We fabricated sensors by modifying the surface of MoS2 and WS2 with COVID-19 antibodies and investigated their characteristics, including stability, reusability, sensitivity, and selectivity. Thiols and disulfanes in antibodies strongly interact with vacant Mo or W sites of MoS2 or WS2, yielding durable devices that are stable for several days in the air or water. More importantly, detachment of the antibodies is suppressed even during the aggressive cleaning process of the devices at pH 3, which allows reusing the same device in several experiments without appreciable loss of sensitivity. Therefore, the nanodevice may be employed in samples of different patients. Further, we found a limit of detection (LOD) of 1 fg ml-1 at room temperature, time responses of 1 second, and selectivity against interferences such as KLH protein or Albumin.
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Affiliation(s)
- Ruben Canton-Vitoria
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece.
| | - Kotaro Sato
- Department of Pathology and Biological Responses, Nagoya University Graduate School of Medicine, Nagoya, Aichi 466-8550, Japan
- Department of Oral and Maxillofacial Surgery, Nagoya University Graduate School of Medicine, Nagoya, Aichi 466-8550, Japan
| | - Yashiro Motooka
- Department of Pathology and Biological Responses, Nagoya University Graduate School of Medicine, Nagoya, Aichi 466-8550, Japan
| | - Shinya Toyokuni
- Department of Pathology and Biological Responses, Nagoya University Graduate School of Medicine, Nagoya, Aichi 466-8550, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi 463-8560, Japan
| | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan.
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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189
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Han Z. Keep in contact. Sci Bull (Beijing) 2023; 68:787-790. [PMID: 37005186 DOI: 10.1016/j.scib.2023.03.044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/31/2023]
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190
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Li Z, Chiang T, Kuo P, Tu C, Kuo Y, Liu P. Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205481. [PMID: 36658711 PMCID: PMC10037976 DOI: 10.1002/advs.202205481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten oxide (a-IWO), with a low footprint than planar structure. The a-IWO TFT with channel thickness of approximately 3-4 atomic layers exhibits high mobility of 24 cm2 V-1 s-1 , near ideally subthreshold swing of 63 mV dec-1 , low leakage current below 10-13 A, high on/off current ratio of larger than 109 , extremely small hysteresis of 0 mV, low contact resistance of 0.44 kΩ-µm, and high stability after encapsulating a passivation layer. The electrical characteristics of n-channel a-IWO TFT are well-matched with p-channel poly-Si TFT for superior complementary metal-oxide-semiconductor technology applications. The inverter can exhibit a high voltage gain of 152 V V-1 at low supply voltage of 1.5 V. The noise margin can be up to 80% of supply voltage and perform the symmetrical window. The pico-watt static power consumption inverter is achieved by the wide energy bandgap of a-IWO channel and atomically-thin channel. The vertically-stacked complementary field-effect transistors (CFET) with high energy-efficiency can increase the circuit density in a chip to conform the development of next-generation semiconductor technology.
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Affiliation(s)
- Zhen‐Hao Li
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Tsung‐Che Chiang
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Po‐Yi Kuo
- Department of Electronic EngineeringNational Chin‐Yi University of TechnologyTaichung411030Taiwan
| | - Chun‐Hao Tu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yue Kuo
- Department of Chemical EngineeringTexas A&M UniversityCollege StationTX77843‐3127USA
| | - Po‐Tsun Liu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
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191
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Schock RTK, Neuwald J, Möckel W, Kronseder M, Pirker L, Remškar M, Hüttel AK. Non-Destructive Low-Temperature Contacts to MoS 2 Nanoribbon and Nanotube Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209333. [PMID: 36624967 DOI: 10.1002/adma.202209333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 12/15/2022] [Indexed: 06/17/2023]
Abstract
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 kΩ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.
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Affiliation(s)
- Robin T K Schock
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Jonathan Neuwald
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Wolfgang Möckel
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Matthias Kronseder
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Luka Pirker
- Solid State Physics Department, Jožef Stefan Institute, 1000, Ljubljana, Slovenia
- J. Heyrovský Institute of Physical Chemistry, v.v.i., Czech Academy of Sciences, 182 23, Prague, Czech Republic
| | - Maja Remškar
- Solid State Physics Department, Jožef Stefan Institute, 1000, Ljubljana, Slovenia
| | - Andreas K Hüttel
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
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192
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Wafer-scale and universal van der Waals metal semiconductor contact. Nat Commun 2023; 14:1014. [PMID: 36823424 PMCID: PMC9950472 DOI: 10.1038/s41467-023-36715-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2022] [Accepted: 02/13/2023] [Indexed: 02/25/2023] Open
Abstract
Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to reduce the contact resistance and minimize the Fermi level pinning at the interface of two-dimensional (2D) semiconductors. However, only a limited number of metals can be mechanically peeled and laminated to fabricate vdW contacts, and the required manual transfer process is not scalable. Here, we report a wafer-scale and universal vdW metal integration strategy readily applicable to a wide range of metals and semiconductors. By utilizing a thermally decomposable polymer as the buffer layer, different metals were directly deposited without damaging the underlying 2D semiconductor channels. The polymer buffer could be dry-removed through thermal annealing. With this technique, various metals could be vdW integrated as the contact of 2D transistors, including Ag, Al, Ti, Cr, Ni, Cu, Co, Au, Pd. Finally, we demonstrate that this vdW integration strategy can be extended to bulk semiconductors with reduced Fermi level pinning effect.
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193
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Li X, Shi X, Marian D, Soriano D, Cusati T, Iannaccone G, Fiori G, Guo Q, Zhao W, Wu Y. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. SCIENCE ADVANCES 2023; 9:eade5706. [PMID: 36791201 PMCID: PMC9931205 DOI: 10.1126/sciadv.ade5706] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Van der Waals coupling with different stacking configurations is emerging as a powerful method to tune the optical and electronic properties of atomically thin two-dimensional materials. Here, we investigate 3R-stacked transition-metal dichalcogenides as a possible option for high-performance atomically thin field-effect transistors (FETs). We report that the effective mobility of 3R bilayer WS2 (WSe2) is 65% (50%) higher than that of 2H WS2 (WSe2). The 3R bilayer WS2 n-type FET exhibits a high on-state current of 480 μA/μm at Vds = 1 V and an ultralow on-state resistance of 1 kilohm·μm. Our observations, together with multiscale simulations, reveal that these improvements originate from the strong interlayer coupling in the 3R stacking, which is reflected in a higher conductance compared to the 2H stacking. Our method provides a general and scalable route toward advanced channel materials in future electronic devices for ultimate scaling, especially for complementary metal oxide semiconductor applications.
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Affiliation(s)
- Xuefei Li
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xinhang Shi
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Damiano Marian
- Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, Pisa 56122, Italia
| | - David Soriano
- Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, Pisa 56122, Italia
- Departamento de Física Aplicada, Universidad de Alicante, San Vicente del Raspeig 03690, Spain
| | - Teresa Cusati
- Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, Pisa 56122, Italia
| | - Giuseppe Iannaccone
- Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, Pisa 56122, Italia
| | - Gianluca Fiori
- Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, Pisa 56122, Italia
| | - Qi Guo
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenjie Zhao
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yanqing Wu
- School of Integrated Circuits and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing 100871, China
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194
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Samizadeh Nikoo M, Matioli E. Electronic metadevices for terahertz applications. Nature 2023; 614:451-455. [PMID: 36792737 DOI: 10.1038/s41586-022-05595-z] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 11/24/2022] [Indexed: 02/17/2023]
Abstract
The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices1. As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting materials to their full potential and, ultimately, further miniaturization2. For example, the carrier injection through tunnelling junctions dominates the channel resistance3, whereas the high parasitic capacitances drastically limit the maximum operating frequency4. In addition, these ultra-scaled devices can only hold a few volts due to the extremely high electric fields, which limits their maximum delivered power5,6. Here we challenge such traditional limitations and propose the concept of electronic metadevices, in which the microscopic manipulation of radiofrequency fields results in extraordinary electronic properties. The devices operate on the basis of electrostatic control of collective electromagnetic interactions at deep subwavelength scales, as an alternative to controlling the flow of electrons in traditional devices, such as diodes and transistors. This enables a new class of electronic devices with cutoff frequency figure-of-merit well beyond ten terahertz, record high conductance values, extremely high breakdown voltages and picosecond switching speeds. This work sets the stage for the next generation of ultrafast semiconductor devices and presents a new paradigm that potentially bridges the gap between electronics and optics.
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Affiliation(s)
- Mohammad Samizadeh Nikoo
- Power and Wide-Band-Gap Electronics Research Laboratory (POWERlab), Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Integrated Systems Laboratory, ETH Zurich, Zurich, Switzerland.
| | - Elison Matioli
- Power and Wide-Band-Gap Electronics Research Laboratory (POWERlab), Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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195
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Ultralow contact resistance in organic transistors via orbital hybridization. Nat Commun 2023; 14:324. [PMID: 36658167 PMCID: PMC9852566 DOI: 10.1038/s41467-023-36006-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/11/2023] [Indexed: 01/20/2023] Open
Abstract
Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V-1 s-1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.
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196
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Chang YH, Lin YS, James Singh K, Lin HT, Chang CY, Chen ZZ, Zhang YW, Lin SY, Kuo HC, Shih MH. AC-driven multicolor electroluminescence from a hybrid WSe 2 monolayer/AlGaInP quantum well light-emitting device. NANOSCALE 2023; 15:1347-1356. [PMID: 36562246 DOI: 10.1039/d2nr03725d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.
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Affiliation(s)
- Ya-Hui Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Shou Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Konthoujam James Singh
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Hsiang-Ting Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
| | - Chiao-Yun Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202301, Taiwan
| | - Zheng-Zhe Chen
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Physics, National Taiwan University, Taipei, Taiwan, Taipei 10617, Taiwan
| | - Yu-Wei Zhang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Shih-Yen Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Chung Kuo
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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197
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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198
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Li X, Wei Y, Wang Z, Kong Y, Su Y, Lu G, Mei Z, Su Y, Zhang G, Xiao J, Liang L, Li J, Li Q, Zhang J, Fan S, Zhang Y. One-dimensional semimetal contacts to two-dimensional semiconductors. Nat Commun 2023; 14:111. [PMID: 36611034 PMCID: PMC9825564 DOI: 10.1038/s41467-022-35760-x] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 12/23/2022] [Indexed: 01/09/2023] Open
Abstract
Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of their contact length still remains a significant challenge because of the sharply raised contact resistance and the deteriorated metal conductivity at nanoscale. Here, we construct a 1D semimetal-2D semiconductor contact by employing single-walled carbon nanotube electrodes, which can push the contact length into the sub-2 nm region. Such 1D-2D heterostructures exhibit smaller van der Waals gaps than the 2D-2D ones, while the Schottky barrier height can be effectively tuned via gate potential to achieve Ohmic contact. We propose a longitudinal transmission line model for analyzing the potential and current distribution of devices in short contact limit, and use it to extract the 1D-2D contact resistivity which is as low as 10-6 Ω·cm2 for the ultra-short contacts. We further demonstrate that the semimetal nanotubes with gate-tunable work function could form good contacts to various 2D semiconductors including MoS2, WS2 and WSe2. The study on 1D semimetal contact provides a basis for further miniaturization of nanoelectronics in the future.
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Affiliation(s)
- Xuanzhang Li
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yang Wei
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Zhijie Wang
- grid.12527.330000 0001 0662 3178Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055 China
| | - Ya Kong
- grid.11135.370000 0001 2256 9319College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 China
| | - Yipeng Su
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Gaotian Lu
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Zhen Mei
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yi Su
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Guangqi Zhang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jianhua Xiao
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Liang Liang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jia Li
- grid.12527.330000 0001 0662 3178Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055 China
| | - Qunqing Li
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jin Zhang
- grid.11135.370000 0001 2256 9319College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 China
| | - Shoushan Fan
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yuegang Zhang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
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199
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Zhuo F, Wu J, Li B, Li M, Tan CL, Luo Z, Sun H, Xu Y, Yu Z. Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors. RESEARCH (WASHINGTON, D.C.) 2023; 6:0057. [PMID: 36939429 PMCID: PMC10016345 DOI: 10.34133/research.0057] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/02/2023] [Indexed: 01/13/2023]
Abstract
Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance-power-area-cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (μ), equivalent oxide thickness (EOT), and contact resistance (RC ), which enables high ON current (Ion ) with reduced driving voltage (Vdd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
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Affiliation(s)
- Fulin Zhuo
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jie Wu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Binhong Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Institute of Microelectronics,
Chinese Academy of Sciences, Beijing 100029, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Moyang Li
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology),
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Yong Xu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
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200
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Li W, Gong X, Yu Z, Ma L, Sun W, Gao S, Köroğlu Ç, Wang W, Liu L, Li T, Ning H, Fan D, Xu Y, Tu X, Xu T, Sun L, Wang W, Lu J, Ni Z, Li J, Duan X, Wang P, Nie Y, Qiu H, Shi Y, Pop E, Wang J, Wang X. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 2023; 613:274-279. [PMID: 36631650 DOI: 10.1038/s41586-022-05431-4] [Citation(s) in RCA: 61] [Impact Index Per Article: 61.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 10/07/2022] [Indexed: 01/13/2023]
Abstract
The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance1,2. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited3-12. In particular, the contact resistance has not surpassed that of covalently bonded metal-semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues3,7. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ([Formula: see text]) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal-oxide-semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance13. The excellent electrical performance, stability and variability make antimony ([Formula: see text]) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon.
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Affiliation(s)
- Weisheng Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoshu Gong
- School of Physics, Southeast University, Nanjing, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Liang Ma
- School of Physics, Southeast University, Nanjing, China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Si Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.,College of Materials Science and Engineering, Nanjing Tech University, Nanjing, China
| | - Çağıl Köroğlu
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Wenfeng Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Lei Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hongkai Ning
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Dongxu Fan
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yifei Xu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xuecou Tu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing, China
| | - Junpeng Lu
- School of Physics, Southeast University, Nanjing, China
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hao Qiu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA.,Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.,Precourt Institute for Energy, Stanford University, CA, USA
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China. .,Suzhou Laboratory, Suzhou, China.
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