Tuning the graphene work function by electric field effect

Advances in spin properties of plant leaf-derived graphene quantum dots from materials to applications

Over the past decade, graphene quantum dots (GQDs) have gained an inexhaustible deal of attention due to their unique zero-dimensional (0D) and quantum confinement properties, which boosted their wide research implication and reliable applications. As one of the promising 0D member and rising star of the carbon family, plant leaf-derived GQDs have attracted significant attention from scholars working in different research fields. Owing to its novel photophysical properties including high photo-stability, plant leaf-derived GQDs have been increasingly utilized in the fabrication of optoelectronic devices. Their superior biocompatibility finds their use in biotechnology applications, while their fascinating spin and magnetic properties have maximized their utilization in spin-manipulation devices. In order to promote the applications of plant leaf-derived GQDs in different fields, several studies over the past decade have successfully utilized plant leaf as sustainable precursor and synthesized GQDs with various sizes using different chemical and physical methods. In this review, we summarize the Neem and Fenugreek leaves based methods of synthesis of plant leaf-derived GQDs, discussing their surface characteristics and photophysical properties. We highlight the size and wavelength dependent photoluminescence properties of plant leaf-derived GQDs towards their applications in optoelectronic devices such as white light-emitting diodes and photodetectors, as well as biotechnology applications such asin vivoimaging of apoptotic cells and spin related devices as magnetic storage medium. Finally, we particularly discuss possible ways of fine tuning the spin properties of plant leaf-derived GQD clusters by incorporation with superconducting quantum interference device, followed by utilization of atomic force microscopy and magnetic force microscopy measurements for the construction of future spin-based magnetic storage media and spin manipulation quantum devices so as to provide an outlook on the future spin applications of plant leaf-derived GQDs.

Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures

Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS2 as the transporting layer for its high carrier mobility and low dark current, few-layered graphene (FLG) as the photon absorption layer, and hexagonal boron nitride (hBN) as the dielectric barrier. The device exhibits an photoresponsivity of 4.4 × 106 A·W-1 and specific detectivity of 1.4 × 1017 cm ⋅ H z - 1 / 2 ⋅ W - 1 for 250 nm DUV light, with a rejection ratio R250/R450 exceeding 106 for visible light. Unlike conventional photodetectors, the cutoff wavelength is determined by the tunneling barrier rather than the material bandgap. Additionally, this photodetection scheme has been extended to a wide range of materials, utilizing different charge transporting layer (e.g., MoS2, ReS2), barrier layer (e.g., hBN, Al2O3), and photon absorption materials (e.g., FLG, PdSe2, Au, Pd), showcasing its broad adaptability and potential for extensive application. Furthermore, the device has been successfully employed as a power meter for weak UV radiation (0.1 μW·cm-2) and for measuring solar UV irradiance with results matching the meteorological agency's weather reports. Overall, this work introduces an effective approach for developing high-performance DUV photodetectors, highlighting significant potential for applications in the optoelectronic market.

Rapid and Efficient Polymer/Contaminant Removal from Single-Layer Graphene via Aqueous Sodium Nitrite Rinsing for Enhanced Electronic Applications

The removal of surface residues from single-layer graphene (SLG), including poly(methyl methacrylate) (PMMA) polymers and Cl- ions, during the transfer process remains a significant challenge with regard to preserving the intrinsic properties of SLG, with the process often leading to unintended doping and reduced electronic performance capabilities. This study presents a rapid and efficient surface treatment method that relies on an aqueous sodium nitrite (NaNO2) solution to remove such contaminants effectively. The NaNO2 solution rinse leverages reactive nitric oxide (NO) species to neutralize ionic contaminants (e.g., Cl-) and partially oxidize polymer residues in less than 10 min, thereby facilitating a more thorough final cleaning while preserving the intrinsic properties of graphene. Characterization techniques, including atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and X-ray photoelectron spectroscopy (XPS), demonstrated substantial reductions in the levels of surface residues. The treatment restored the work function of the SLG to approximately 4.79 eV, close to that of pristine graphene (~4.5-4.8 eV), compared to the value of nearly 5.09 eV for conventional SLG samples treated with deionized (DI) water. Raman spectroscopy confirmed the reduced doping effects and improved structural integrity of the rinsed SLG. This effective rinsing process enhances the reproducibility and performance of SLG, enabling its integration into advanced electronic devices such as organic light-emitting diodes (OLEDs), photovoltaic (PV) cells, and transistors. Furthermore, the technique is broadly applicable to other two-dimensional (2D) materials, paving the way for next-generation (opto)electronic technologies.

Engineering anisotropic electrodynamics at the graphene/CrSBr interface

Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon polaritons (SPPs), as it possesses low intrinsic losses and a high degree of optical confinement. However, the isotropic nature of graphene limits its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials for polaritonic lensing and canalization. Here, we present graphene/CrSBr as an engineered 2D interface that hosts highly anisotropic SPP propagation across mid-infrared and terahertz energies. Using scanning tunneling microscopy, scattering-type scanning near-field optical microscopy, and first-principles calculations, we demonstrate mutual doping in excess of 1013 cm-2 holes/electrons between the interfacial layers of graphene/CrSBr. SPPs in graphene activated by charge transfer interact with charge-induced electronic anisotropy in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic propagation lengths that differ by an order-of-magnitude between the in-plane crystallographic axes of CrSBr.

Unconventional Photovoltaic Effect in a Perovskite-Coated Metal-Insulator-Graphene Photodiode

The photovoltaic effect offers a simple way for converting light into an electrical signal. Here, we report on the observation of a zero-bias photocurrent in the forward direction of a perovskite-covered metal-insulator-graphene diode (MIG-diode), which is the opposite current direction compared to conventional photovoltaic cells and photodiodes. Photocurrent mapping has been performed to gain insights into the precise position of photocurrent generation, demonstrating that the zero-bias photocurrent is primarily generated at the edges of the active device area. Using the band structure diagram at the device edge and on the device area, the unconventional photocurrent direction could be well explained. In addition, the key parameters for the MIG-perovskite photodiode were extracted experimentally. This includes the power-dependent responsivity of up to 10 mA/W as well as the noise equivalent power of 2.23 × 10-13 W/√Hz at zero-bias voltage.

Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional Monolayers

Heterogeneous integration of emerging two-dimensional (2D) materials with mature three-dimensional (3D) silicon-based semiconductor technology presents a promising approach for the future development of energy-efficient, function-rich nanoelectronic devices. In this study, we designed a mixed-dimensional junction structure in which a 2D monolayer (e.g., graphene, MoS2, and h-BN) is sandwiched between a metal (e.g., Ti, Au, and Pd) and a 3D semiconductor (e.g., p-Si) to investigate charge transport properties exclusively in an out-of-plane (OoP) direction. The role of 2D monolayers as either an OoP metal-to-semiconductor charge injection barrier or an OoP semiconductor-to-metal charge collection barrier was comparatively evaluated. Compared to monolayer graphene, monolayer MoS2 and h-BN effectively modulate OoP metal-to-semiconductor charge injection through a barrier tunneling effect. Their effective OoP resistance and resistivity were extracted using a resistors-in-series model. Intriguingly, when functioning as a semiconductor-to-metal charge collection barrier, all 2D monolayers become electronically "transparent" (close to zero resistance) when a high OoP voltage (greater than the built-in voltage) is applied. As a mixed-dimensional integrated diode, the Ti/MoS2/p-Si and Au/MoS2/p-Si configurations exhibit both high OoP rectification ratios (5.4 × 104) and conductance (1.3 × 105 S/m2). Our work demonstrates the tunable OoP charge transport characteristics at a 2D/3D interface, suggesting the opportunity for 2D/3D heterogeneous integration, even with sub-1 nm thick 2D monolayers, to enhance modern Si-based electronic devices.

Accelerated Screening of Highly Sensitive Gas Sensor Materials for Greenhouse Gases Based on DFT and Machine Learning Methods

Greenhouse gases (GHGs) have caused great harm to the ecological environment, so it is necessary to screen gas sensor materials for detecting GHGs. In this study, we propose an ideal gas sensor design strategy with high screening efficiency and low cost targeting four typical GHGs (CO2, CH4, N2O, SF6). This strategy introduces machine learning (ML) methods based on density functional theory (DFT) to achieve accurate and rapid screening from a large number of candidate gas sensor materials. Specifically, the candidate materials include 28 different transition metal-doped WSe2 monolayers (TM-WSe2), and four gas molecules and their optimal adsorption structures on TM-WSe2 are constructed. Ten fine-tuned ML models are implemented to train and predict the adsorption energy (Eads) and adsorption distance (D) of target gases on TM-WSe2, thereby selecting the optimal ML model and identifying these promising gas sensor materials. In addition, the gas-sensing properties of these materials are verified by band structure, work function, and recovery time. This research provides a reasonable and low-cost new way for rapid screening of ideal gas sensor materials with the help of artificial intelligence and proves its effectiveness through experiments.

Electrically Pumped h-BN Single-Photon Emission in van der Waals Heterostructure

Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond and silicon carbide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we realize a device concept to construct electrically pumped single-photon emission using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust and persistent generation of nonclassical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect structures of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics.

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.

Recent advances in two-dimensional materials for drug delivery

Two-dimensional (2D) materials exhibit significant potential in biomedical applications, particularly as drug carriers. Thus, 2D materials, including graphene, black phosphorus, transition metal dichalcogenides, transition metal carbides/nitrides, and hexagonal boron nitride, have been extensively studied. Their large specific surface area, abundant surface active sites, and excellent biocompatibility and biodegradability make them ideal platforms for drug loading and delivery. By optimizing the physicochemical properties and methods for the surface modification of 2D materials, improved drug release mechanisms and enhanced combination therapy effects can be achieved, providing a reliable foundation for efficient cancer treatment. This review provides a comprehensive analysis of the recent advances in the utilization of 2D materials for drug delivery. It systematically categorizes and summarizes the preparation methodologies, surface modification strategies, application domains, primary advantages and potential drawbacks of various 2D materials in the biomedical field. Furthermore, it provides an extensive overview of current challenges in this field and outlines potential future research directions for 2D materials in drug delivery based on existing issues.

Bio-Plausible Multimodal Learning with Emerging Neuromorphic Devices

Multimodal machine learning, as a prospective advancement in artificial intelligence, endeavors to emulate the brain's multimodal learning abilities with the objective to enhance interactions with humans. However, this approach requires simultaneous processing of diverse types of data, leading to increased model complexity, longer training times, and higher energy consumption. Multimodal neuromorphic devices have the capability to preprocess spatio-temporal information from various physical signals into unified electrical signals with high information density, thereby enabling more biologically plausible multimodal learning with low complexity and high energy-efficiency. Here, this work conducts a comparison between the expression of multimodal machine learning and multimodal neuromorphic computing, followed by an overview of the key characteristics associated with multimodal neuromorphic devices. The bio-plausible operational principles and the multimodal learning abilities of emerging devices are examined, which are classified into heterogeneous and homogeneous multimodal neuromorphic devices. Subsequently, this work provides a detailed description of the multimodal learning capabilities demonstrated by neuromorphic circuits and their respective applications. Finally, this work highlights the limitations and challenges of multimodal neuromorphic computing in order to hopefully provide insight into potential future research directions.

Exfoliation and optical properties of S = 1 triangular lattice antiferromagnet NiGa2S4

Two-dimensional (2D) van der Waals (vdW) materials have been an exciting area of research ever since scientists first isolated a single layer of graphene. Single layer magnetic materials can provide a pathway for vdW heterostructures with magnetic properties. While most of the magnetic vdW materials exhibit ordering transitions in the bulk, here we report a successful exfoliation of a triangular lattice S = 1 antiferromagnet NiGa[Formula: see text]S[Formula: see text], which already demonstrates exotic magnetism in the bulk material. We establish the number of layers of the material by atomic force microscopy (AFM) and detail a careful characterization using Raman and optical spectroscopy to demonstrate how the optical, electronic, and structural properties of NiGa[Formula: see text]S[Formula: see text] change as a function of sample thickness. Optical measurements and electronic structure calculations of bulk versus monolayer NiGa[Formula: see text]S[Formula: see text] confirm the material to be a Mott insulator with an electronic gap of about 1.5 eV, which slightly increases for layers below 10 L. We conclude with a theoretical analysis of the possibility of doping monolayer NiGa[Formula: see text]S[Formula: see text] by proximity to a metal.

Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure

The proximity-effect, whereby materials in contact appropriate each other's electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott-gap in 1T-TaS2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.

2D Conjugated Polymer Thin Films for Organic Electronics: Opportunities and Challenges

2D conjugated polymers (2DCPs) possess extended in-plane π-conjugated lattice and out-of-plane π-π stacking, which results in enhanced electronic performance and potentially unique band structures. These properties, along with predesignability, well-defined channels, easy postmodification, and order structure attract extensive attention from material science to organic electronics. In this review, the recent advance in the interfacial synthesis and conductivity tuning strategies of 2DCP thin films, as well as their application in organic electronics is summarized. Furthermore, it is shown that, by combining topology structure design and targeted conductivity adjustment, researchers have fabricated 2DCP thin films with predesigned active groups, highly ordered structures, and enhanced conductivity. These films exhibit great potential for various thin-film organic electronics, such as organic transistors, memristors, electrochromism, chemiresistors, and photodetectors. Finally, the future research directions and perspectives of 2DCPs are discussed in terms of the interfacial synthetic design and structure engineering for the fabrication of fully conjugated 2DCP thin films, as well as the functional manipulation of conductivity to advance their applications in future organic electronics.

Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques

For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.

Spatial and Bidirectional Work Function Modulation of Monolayer Graphene with Patterned Polymer "Fluorozwitterists"

Understanding the electronic properties resulting from soft-hard material interfacial contact has elevated the utility of functional polymers in advanced materials and nanoscale structures, such as in work function engineering of two-dimensional (2D) materials to produce new types of high-performance devices. In this paper, we describe the electronic impact of functional polymers, containing both zwitterionic and fluorocarbon components in their side chains, on the work function of monolayer graphene through the preparation of negative-tone photoresists, which we term "fluorozwitterists." The zwitterionic and fluorinated groups each represent dipole-containing moieties capable of producing distinct surface energies as thin films. Kelvin probe force microscopy revealed these polymers to have a p-doping effect on graphene, which contrasts the work function decrease typically associated with polymer-to-graphene contact. Copolymerization of fluorinated zwitterionic monomers with methyl methacrylate and a benzophenone-substituted methacrylate produced copolymers that were amenable to photolithographic fabrication of fluorozwitterist structures. Consequently, spatial alteration of zwitterion coverage across graphene yielded stripes that resemble a lateral p-i-n diode configuration, with local increase or decrease of work function. Overall, this polymeric fluorozwitterist design is suitable for enabling simple, solution-based surface patterning and is anticipated to be useful for spatial work function modulation of 2D materials integrated into electronic devices.

Modeling and tuning the electronic, mechanical and optical properties of a recently synthesized 2D polyaramid: a first principles study

This work delves into a methodology of modeling 2D materials and their structural engineering, considering an example of a recently synthesized 2D polyaramid (2DPA-1). A bottom-up approach similar to experimental techniques is implemented for modeling, and then its electronic structures and phonon spectrum and the quadratic nature of flexural phonons are analyzed. Furthermore, boron and nitrogen atoms are substituted for the carbon atom of the amide group of 2DPA-1, and their effects on its electronic properties, phonon spectrum, and mechanical properties are compared with those of pristine 2DPA-1 using density functional theory calculations. The ab initio molecular dynamics (AIMD) simulations validate the thermal stability of our system at high temperatures. The spin-polarized electronic structures reveal the transformation of pristine 2DPA-1 from a semiconductor to a half-metal and its magnetic behaviour upon nitrogen substitution. Constraining the quadratic nature of flexural phonons using the Born-Huang criteria significantly enhances the phonon spectra, leading to more accurate and reliable simulations. For modulated 2DPA-1, the elastic modulus varies between 17 and 27 N m-1, and the absorption peaks shift from ∼5.15 eV to 2.42 eV, enabling the application of polymeric 2D nanomaterials in photocatalysis and sensing, where light absorption in the near-infrared region is important. Finally, validation of our methodology is confirmed, as computed Young's modulus (11.26-11.76 GPa) of 2DPA-1 matches excellently with the experimental value (12.7 ± 3.8 GPa). Overall, this study reveals the modeling of a newly synthesized polymeric 2D material, and tuning its properties results in smaller bandgaps and half-metallic and magnetic behaviours.

A back-to-back diode model applied to van der Waals Schottky diodes

The use of metal and semimetal van der Waals contacts for 2D semiconducting devices has led to remarkable device optimizations. In comparison with conventional thin-film metal deposition, a reduction in Fermi level pinning at the contact interface for van der Waals contacts results in, generally, lower contact resistances and higher mobilities. Van der Waals contacts also lead to Schottky barriers that follow the Schottky-Mott rule, allowing barrier estimates on material properties alone. In this study, we present a double Schottky barrier model and apply it to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS2) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky-Mott rule from simple two-terminal current-voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrierin-situusing a regional contact gate. Our results highlight the utility of a basic back-to-back diode model in extracting device characteristics in all van der Waals transistors.

Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene

Graphene-based, high-quality, two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity1-21. Specifically, superconductivity has been observed in both electron- and hole-doped twisted graphene moiré systems1-17, whereas in crystalline graphene systems, superconductivity has so far been observed only in hole-doped rhombohedral trilayer graphene (RTG)18 and hole-doped Bernal bilayer graphene (BBG)19-21. Recently, enhanced superconductivity has been demonstrated20,21 in BBG because of the proximity to a monolayer WSe2. Here we report the observation of superconductivity and a series of flavour-symmetry-breaking phases in electron- and hole-doped BBG/WSe2 devices by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when the applied electric fields drive the BBG electron or hole wavefunctions towards the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. The hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. By contrast, the electron-doped superconductivity obeys the Pauli limit, although the proximity-induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of superconductor devices based on BBG.

Edge-Rich 3D Structuring of Metal Chalcogenide/Graphene with Vertical Nanosheets for Efficient Photocatalytic Hydrogen Production

Constructing pertinent nanoarchitecture with abundant exposed active sites is a valid strategy for boosting photocatalytic hydrogen generation. However, the controllable approach of an ideal architecture comprising vertically standing transition metal chalcogenides (TMDs) nanosheets on a 3D graphene network remains challenging despite the potential for efficient photocatalytic hydrogen production. In this study, we fabricated edge-rich 3D structuring photocatalysts involving vertically grown TMDs nanosheets on a 3D porous graphene framework (referred to as 3D Gr). 2D TMDs (MoS2 and WS2)/3D Gr heterostructures were produced by location-specific photon-pen writing and metal-organic chemical vapor deposition for maximum edge site exposure enabling efficient photocatalytic reactivity. Vertically aligned 2D Mo(W)S2/3D Gr heterostructures exhibited distinctly boosted hydrogen production because of the 3D Gr caused by synergetic impacts associated with the large specific surface area and improved density of exposed active sites in vertically standing Mo(W)S2. The heterostructure involving graphene and TMDs corroborates an optimum charge transport pathway to rapidly separate the photogenerated electron-hole pairs, allowing more electrons to contribute to the photocatalytic hydrogen generation reaction. Consequently, the size-tailored heterostructure showed a superior hydrogen generation rate of 6.51 mmol g-1 h-1 for MoS2/3D graphene and 7.26 mmol g-1 h-1 for WS2/3D graphene, respectively, which were 3.59 and 3.76 times greater than that of MoS2 and WS2 samples. This study offers a promising path for the potential of 3D structuring of vertical TMDs/graphene heterostructure with edge-rich nanosheets for photocatalytic applications.

All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

Uniform Synthesis of Bilayer Hydrogen Substituted Graphdiyne for Flexible Piezoresistive Applications

Graphdiyne (GDY) has garnered significant attention as a cutting-edge 2D material owing to its distinctive electronic, optoelectronic, and mechanical properties, including high mobility, direct bandgap, and remarkable flexibility. One of the key challenges hindering the implementation of this material in flexible applications is its large area and uniform synthesis. The facile growth of centimeter-scale bilayer hydrogen substituted graphdiyne (Bi-HsGDY) on germanium (Ge) substrate is achieved using a low-temperature chemical vapor deposition (CVD) method. This material's field effect transistors (FET) showcase a high carrier mobility of 52.6 cm2 V-1 s-1 and an exceptionally low contact resistance of 10 Ω µm. By transferring the as-grown Bi-HsGDY onto a flexible substrate, a long-distance piezoresistive strain sensor is demonstrated, which exhibits a remarkable gauge factor of 43.34 with a fast response time of ≈275 ms. As a proof of concept, communication by means of Morse code is implemented using a Bi-HsGDY strain sensor. It is believed that these results are anticipated to open new horizons in realizing Bi-HsGDY for innovative flexible device applications.

Single Crystal Perovskite/Graphene Self-Driven Photodetector with Fast Response Speed

Recently, the combination of two-dimensional (2D) materials and perovskites has gained increasing attention in optoelectronic applications owing to their excellent optical and electrical characteristics. Here, we report a self-driven photodetector consisting of a monolayer graphene sheet and a centimeter-sized CH3NH3PbBr3 single crystal, which was prepared using an optimized wet transfer method. The photodetector exhibits a short response time of 2/30 μs by virtue of its high-quality interface, which greatly enhances electron-hole pair separation in the heterostructure under illumination. In addition, a responsivity of ~0.9 mA/W and a detectivity over 1010 Jones are attained at zero bias. This work inspires new methods for preparing large-scale high-quality perovskite/2D material heterostructures, and provides a new direction for the future enhancement of perovskite optoelectronics.

Understanding how junction resistances impact the conduction mechanism in nano-networks

Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS2 nanosheets (≈ 7 cm2 V-1 s-1) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.

Nonequilibrium Dynamics of Electron Emission from Cold and Hot Graphene under Proton Irradiation

Characteristic properties of secondary electrons emitted from irradiated two-dimensional materials arise from multi-length and multi-time-scale relaxation processes that connect the initial nonequilibrium excited electron distribution with their eventual emission. To understand these processes, which are critical for using secondary electrons as high-resolution thermalization probes, we combine first-principles real-time electron dynamics with irradiation experiments. Our data for cold and hot proton-irradiated graphene show signatures of kinetic and potential emission and generally good agreement for electron yields between experiment and theory. The duration of the emission pulse is about 1.5 fs, which indicates high time resolution when used as a probe. Our newly developed method to predict kinetic energy spectra shows good agreement with electron and ion irradiation experiments and prior models. We find that the lattice temperature significantly increases secondary electron emission, whereas electron temperature has a negligible effect.

Dual-band and spectrally selective infrared absorbers based on hybrid gold-graphene metasurfaces

In this paper, we propose a dual-band and spectrally selective infrared (IR) absorber based on a hybrid structure comprising a patterned graphene monolayer and cross-shaped gold resonators within a metasurface. Rooted in full-wave numerical simulations, our study shows that the fundamental absorption mode of the gold metasurface hybridizes with the graphene pattern, leading to a second absorptive mode whose properties depend on graphene's electrical properties and physical geometry. Specifically, the central operation band of the absorber is defined by the gold resonators whereas the relative absorption level and spectral separation between the two modes can be controlled by graphene's chemical potential and its pattern, respectively. We analyze this platform using coupled-mode theory to understand the coupling mechanism between these modes and to elucidate the emergence and tuning of the dual band response. The proposed dual-band device can operate at different bands across the IR spectrum and may open new possibilities for tailored sensing applications in spectroscopy, thermal imaging, and environmental monitoring.

Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential in optoelectronic applications due to their direct band gap and exceptional quantum yield. However, TMD-based light-emitting devices have shown low external quantum efficiencies as imbalanced free carrier injection often leads to the formation of non-radiative charged excitons, limiting practical applications. Here, electrically confined electroluminescence (EL) of neutral excitons in tungsten diselenide (WSe2) light-emitting transistors (LETs) based on the van der Waals heterostructure is demonstrated. The WSe2 channel is locally doped to simultaneously inject electrons and holes to the 1D region by a local graphene gate. At balanced concentrations of injected electrons and holes, the WSe2 LETs exhibit strong EL with a high external quantum efficiency (EQE) of ≈8.2 % at room temperature. These experimental and theoretical results consistently show that the enhanced EQE could be attributed to dominant exciton emission confined at the 1D region while expelling charged excitons from the active area by precise control of external electric fields. This work shows a promising approach to enhancing the EQE of 2D light-emitting transistors and modulating the recombination of exciton complexes for excitonic devices.

Stability and Electronic Structure of Nitrogen-Doped Graphene-Supported Cun (n = 1-5) Clusters in Vacuum and under Electrochemical Conditions: Toward Sensor and Catalyst Design

Here, we present a detailed computational study of the stability and the electronic structure of nitrogen-doped graphene (N4V2) supported Cun (n = 1-5) clusters, which are promising carbon-dioxide electroreduction catalysts. The binding of the clusters to the nitrogen-doped graphene and the electronic structure of these systems were investigated under vacuum and electrochemical conditions. The stability analysis showed that among the systems, the nitrogen-doped graphene bound Cu4 is the most stable in vacuum, while in an electrolyte, and at a negative potential, the N4V2-Cu3 is energetically more favorable. The ground state electronic structure of the nitrogen-doped graphene substrate undergoes topological phase transition, from a semimetallic state, and we observed a metallic and topologically trivial state after the clusters are deposited. The electrode potential adjusts the type and density of the charge carriers in the semimetallic models, while the structures containing copper exhibit bands which are deformed and relaxed by the modified number of electrons.

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal-boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well as the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.

CO and HCHO Sensing by Single Au Atom-Decorated WS2 Monolayer for Diagnosis of Thermal Aging Faults in the Dry-Type Reactor: A First-Principles Study

CO and HCHO are the main pyrolysis gases in long-term running dry-type reactors, and thus the diagnosis of thermal insulation faults inside such devices can be realized by sensing these gases. In this paper, a single Au atom-decorated WS2 (Au-WS2) monolayer is proposed as an original sensing material for CO or HCHO detection to evaluate the operation status of dry-type reactors. It was found that the Au atom prefers to be adsorbed at the top of the S atom of the pristine WS2 monolayer, wherein the binding force is calculated as -3.12 eV. The Au-WS2 monolayer behaves by chemisorption upon the introduction of CO and HCHO molecules, with the adsorption energies of -0.82 and -1.01 eV, respectively. The charge density difference was used to analyze the charge-transfer and bonding behaviors in the gas adsorptions, and the analysis of density of state as well as band structure indicate gas-sensing mechanisms. As calculated, the sensing responses of the Au-WS2 monolayer upon CO and HCHO molecule introduction were 58.7% and -74.4%, with recovery times of 0.01 s and 11.86 s, respectively. These findings reveal the favorable potential of the Au-WS2 monolayer to be a reusable and room-temperature sensing candidate for CO and HCHO detections. Moreover, the work function of the Au-WS2 monolayer was decreased by 13.0% after the adsorption of CO molecules, while it increased by 1.2% after the adsorption of HCHO molecules, which implies its possibility to be a work-function-based gas sensor for CO detection. This theoretical report paves the way for further investigations into WS2-based gas sensors in some other fields, and it is our hope that our findings can stimulate more reports on novel gas-sensing materials for application in evaluating the operation conditions of dry-type reactors.

Ultra-thin double-layered hexagonal CuI: strain tunable properties and robust semiconducting behavior

In this study, the freestanding form of ultra-thin CuI crystals, which have recently been synthesized experimentally, and their strain-dependent properties are investigated by means of density functional theory calculations. Structural optimizations show that CuI crystallizes in a double-layered hexagonal crystal (DLHC) structure. While phonon calculations predict that DLHC CuI crystals are dynamically stable, subsequent vibrational spectrum analyzes reveal that this structure has four unique Raman-active modes, allowing it to be easily distinguished from similar ultra-thin two-dimensional materials. Electronically, DLHC CuI is found to be a semiconductor with a direct band gap of 3.24 eV which is larger than that of its wurtzite and zincblende phases. Furthermore, it is found that in both armchair (AC) and zigzag (ZZ) orientations the elastic instabilities occur over the high strain strengths indicating the soft nature of CuI layer. In addition, the stress-strain curve along the AC direction reveal that DLHC CuI undergoes a structural phase transition between the 4% and 5% tensile uniaxial strains as indicated by a sudden drop of the stress in the lattice. Moreover, the phonon band dispersions show that the phononic instability occurs at much smaller strain along the ZZ direction than that of along the AC direction. Furthermore, the external strain direction can be deduced from the predicted Raman spectra through the splitting rates of the doubly degenerate in-plane vibrations. The mobility of the hole carriers display highly anisotropic characteristic as the applied strain reaches 5% along the AC direction. Due to its anomalous strain-dependent electronic features and elastically soft nature, DLHC of CuI is a potential candidate for future electro-mechanical applications.

A giant intrinsic photovoltaic effect in atomically thin ReS2

The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the PV effect with high efficiency exceeding that of traditional ferroelectric perovskite oxides. Here, we report the giant intrinsic PV effect in atomically thin rhenium disulfide (ReS2) with centrosymmetry breaking. In graphene/ReS2/graphene sandwich structures, significant short-circuit currents (Isc) were observed with illumination over the visible spectral range, presenting the highest responsivity (110 mA W-1) and external quantum efficiency (25.7%) among those reported PV effects in 2D materials. This giant PV effect could be ascribed to the spontaneous-polarization induced depolarization field in even-number-layered ReS2 flakes benefiting from the distorted 1T lattice structure. Our results provide a new potential candidate material for the development of novel high-efficiency, miniaturized and easily integrated photodetectors and solar cells.

First-principles study of highly sensitive graphene/hexagonal boron nitride heterostructures for application in toxic gas-sensing devices

Graphene-based sensors exhibit high sensitivity, fast response, and good selectivity towards toxic gases but have low mechanical stability. The combination of graphene and two-dimensional hexagonal boron nitride (h-BN) is expected to increase the mechanical stability and enhance the adsorption performance of these gas sensors. Using first-principles calculations, we demonstrate that two-dimensional graphene/h-BN double layers can be used as good substrates for gas sensors with a small lattice mismatch of only 1.78%. Moreover, the presence of a h-BN layer widens the band gap by about 38 meV and considerably increases the work function, thus positively affecting the gas adsorption performance. Although these graphene/h-BN heterostructures do not change the physical adsorption mechanism of these sensors concerning the graphene-based materials, these bilayers significantly enhance the sensitivity of these sensors for detecting CO2, CO, NO, and NO2 toxic gases. Particularly, compared to the pristine graphene-based materials, the gas adsorption energies of graphene/h-BN increased by up to 13.78% for the adsorption of NO, and the shortest distances between the graphene/h-BN substrates and adsorbed gas molecules decreased. We also show that the graphene/h-BN heterostructure is more selective towards NOx gases while more inert towards COx gases, based on the different amounts of charge transferred from the substrate to the adsorbed gas molecules. Using the non-equilibrium Green functions in the context of density functional theory, we quantitatively associated these charge transfers with the reduction of the current passing through these scattering regions. These results demonstrate that graphene/h-BN heterostructures can be exploited as highly sensitive and selective room-temperature gas sensors for detecting toxic gases.

Graphene as a Sensor for Lung Cancer: Insights into Adsorption of VOCs Using vdW DFT

The adsorption mechanism of individual volatile organic compounds (VOCs) on the surface of graphene is investigated using nonempirical van der Waals (vdW) density functional theory. The VOCs chosen as adsorbates are ethanol, benzene, and toluene, which are found in the exhaled breath of lung cancer patients. The most energetically favorable configurations of the adsorbed systems, adsorption energy profiles, charge transfer, and work function are calculated. The fundamental insight into the interactions between the considered VOC molecules and graphene through molecular doping, i.e., charge transfer, is estimated. It is found that the adsorption energy is highly sensitive to the vdW functionals. Adsorption energies calculated by revPBE-vdW are in good agreement with the available experimental data, and the revPBE-vdW functional can cover well the physical phenomena behind the adsorption of these VOCs on graphene. Bader charge analysis shows that 0.064, 0.042, and 0.061e of charge were transferred from the graphene surface to ethanol, benzene, and toluene, respectively. All of the considered VOCs act as electron acceptors from graphene. By analyzing the electronic structure of the adsorption systems, we found that the energy level of the highest occupied molecular orbitals of these considered VOCs is shifted backward toward the Fermi level. The interaction of the VOCs with the π and π* states of the C atoms in graphene breaks the symmetry of graphene, leading to the opening of a band gap at the Fermi level. The adsorption of these considered VOCs onto the pristine graphene produces a band gap of 5-12 meV.

Perovskenes: two-dimensional perovskite-type monolayer materials predicted by first-principles calculations

Inspired by the successful transfer of freestanding ultrathin films of SrTiO3 and BiFeO3 onto various substrates without any thickness limitation, in this study, using density functional theory (DFT), we assessed the structural stability of a group of two-dimensional perovskite-type materials which we call perovskenes. Specifically, we analyzed the stability of 2D SrTiO3, SrZrO3, BaTiO3, and BaZrO3 monolayers. Our simulations revealed that the 2D monolayers of SrTiO3, BaTiO3, and BaZrO3 are at least meta-stable, as confirmed by cohesive energy calculations, evaluation of elastic constants, and simulation of phonon dispersion modes. With this information, we proceeded to investigate the electronic, optical, and thermoelectric properties of these perovskenes. To gain insight into their promising applications, we investigated the electronic and optical properties of these 2D materials and found that they are wide bandgap semiconductors with significant absorption and reflection in the ultraviolet (UV) region of the electromagnetic field, suggesting them as promising materials for use in UV shielding applications. In addition, evaluating their thermoelectric factors revealed that these materials become better conductors of electricity and heat as the temperature rises. They can, hence, convert temperature gradients into electrical energy and transport electrical charges, which is beneficial for efficient power generation in thermoelectric devices. This work opens a new window for designing a novel family of 2D perovskite type materials termed perovskenes. The vast variety of different perovskite compounds and their variety of applications suggest deeper studies on the perovskenes materials for use in innovative technologies.

Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene

We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS2 and MoSe2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS2 and MoSe2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm2 s-1 and a charge mobility of 5000 cm2 V-1 s-1, the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s-1, respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. The optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.

Two-dimensional nanomaterials as enhanced surface plasmon resonance sensing platforms: Design perspectives and illustrative applications

Both increasing demand for ultrasensitive detection in the scientific community and significant new breakthroughs in materials science field have inspired and promoted the development of new-generation multifunctional plasmonic sensing platforms by adopting promising plasmonic nanomaterials. Recently, high-quality surface plasmon resonance (SPR) sensors, assisted by two dimensional (2D) nanomaterials including 2D van der Waals (vdWs) materials (such as graphene/graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, antimonene, tellurene, MXenes, and metal oxides), 2D metal-organic frameworks (MOFs), 2D hyperbolic metamaterials (HMMs), and 2D optical metasurfaces, have emerged as a class of novel plasmonic sensing platforms that show unprecedented detection sensitivity and impressive performance. This review of recent progress in 2D nanomaterials-enhanced SPR platforms will highlight their compelling plasmonic enhancement features, working mechanisms, and design methodologies, as well as discuss illustrative practical applications. Hence, it is of great importance to describe the latest research progress in 2D nanomaterials-enhanced SPR sensing cases. In this review, we present some concepts of SPR enhanced by 2D nanomaterials, including the basic principles of SPR, signal modulation approaches, and working enhancement mechanisms for various 2D materials-enhanced SPR systems. In addition, we also demonstrate a detailed categorization of 2D nanomaterials-enhanced SPR sensing platforms and comment on their ability to realize ultrasensitive SPR detection. Finally, we conclude with future perspectives for exploring a new generation of 2D nanomaterials-based sensors.

Characterizing and controlling infrared phonon anomaly of bilayer graphene in optical-electrical force nanoscopy

We, for the first time, report the nanoscopic imaging study of anomalous infrared (IR) phonon enhancement of bilayer graphene, originated from the charge imbalance between the top and bottom layers, resulting in the enhancement of E1u mode of bilayer graphene near 0.2 eV. We modified the multifrequency atomic force microscope platform to combine photo-induced force microscope with electrostatic/Kelvin probe force microscope constituting a novel hybrid nanoscale optical-electrical force imaging system. This enables to observe a correlation between the IR response, doping level, and topographic information of the graphene layers. Through the nanoscale spectroscopic image measurements, we demonstrate that the charge imbalance at the graphene interface can be controlled by chemical (doping effect via Redox mechanism) and mechanical (triboelectric effect by the doped cantilever) approaches. Moreover, we can also diagnosis the subsurface cracks on the stacked few-layer graphene at nanoscale, by monitoring the strain-induced IR phonon shift. Our approach provides new insights into the development of graphene-based electronic and photonic devices and their potential applications.

Gate-controlled suppression of light-driven proton transport through graphene electrodes

Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infra-red spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tuning the Fermi energy of electrons in graphene with a bias, a phenomenon controlled by Pauli blocking of photo-excited electrons. These findings demonstrate a dependence between graphene's electronic and proton transport properties and provide fundamental insights into molecularly thin electrode-electrolyte interfaces and their interaction with light.

Validation of transparent and flexible neural implants for simultaneous electrophysiology, functional imaging, and optogenetics

The combination of electrophysiology and neuroimaging methods allows the simultaneous measurement of electrical activity signals with calcium dynamics from single neurons to neuronal networks across distinct brain regions in vivo. While traditional electrophysiological techniques are limited by photo-induced artefacts and optical occlusion for neuroimaging, different types of transparent neural implants have been proposed to resolve these issues. However, reproducing proposed solutions is often challenging and it remains unclear which approach offers the best properties for long-term chronic multimodal recordings. We therefore created a streamlined fabrication process to produce, and directly compare, two types of transparent surface micro-electrocorticography (μECoG) implants: nano-mesh gold structures (m-μECoGs) versus a combination of solid gold interconnects and PEDOT:PSS-based electrodes (pp-μECoGs). Both implants allowed simultaneous multimodal recordings but pp-μECoGs offered the best overall electrical, electrochemical, and optical properties with negligible photo-induced artefacts to light wavelengths of interest. Showing functional chronic stability for up to four months, pp-μECoGs also allowed the simultaneous functional mapping of electrical and calcium neural signals upon visual and tactile stimuli during widefield imaging. Moreover, recordings during two-photon imaging showed no visible signal attenuation and enabled the correlation of network dynamics across brain regions to individual neurons located directly below the transparent electrical contacts.

Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions

Graphene has garnered increasing attention for solar energy harvesting owing to its unique features. However, limitations hinder its widespread adoption in solar energy harvesting, comprising the band gapless in the molecular orbital of graphene lattice, its vulnerability to oxidation in oxidative environments, and specific toxic properties that require careful consideration during development. Beyond current challenges, researchers have explored doping graphene with ionic liquids to raise the lifespan of solar cells (SCs). Additionally, they have paid attention to optimizing graphene/Si Schottky junction or Schottky barrier SCs by enhancing the conductivity and work function of graphene, improving silicon's reflectivity, and addressing passivation issues at the surface/interface of graphene/Si, resulting in significant advancements in their power conversion efficiency. Increasing the functional area of graphene-based SCs and designing efficient grid electrodes are also crucial for enhancing carrier collection efficiency. Flaws and contaminants present at the interface between graphene and silicon pose significant challenges. Despite the progress of graphene/Si-based photovoltaic cells still needs to catch up to the efficiency achieved by commercially available Si p-n junction SCs. The low Schottky barrier height, design-related challenges associated with transfer techniques, and high lateral resistivity of graphene contribute to this performance gap. To maximize the effectiveness and robustness of graphene/Si-based photovoltaic cells, appropriate interlayers have been utilized to tune the interface and modulate graphene's functionality. This mini-review will address ongoing research and development endeavors using van der Waals graphene heterojunctions, aiming to overcome the existing limitations and unlock graphene's full potential in solar energy harvesting and smart storage systems.

Tuneable effects of pyrrolic N and pyridinic N on the enhanced field emission properties of nitrogen-doped graphene

Graphene is one of the most potential field emission cathode materials and a lot of work has been carried out to demonstrate the effectiveness of nitrogen doping (N doping) for the enhancement of field emission properties of graphene. However, the effect of N doping on graphene field emission is lacking systematic and thorough understanding. In this study, undoped graphene and N-doped graphene were prepared and characterized for measurements, and the field emission property dependence of the doping content was investigated and the tuneable effect was discussed. For the undoped graphene, the turn-on field was 7.95 V μm-1 and the current density was 7.3 μA cm-2, and for the 10 mg, 20 mg, and 30 mg N-doped graphene samples, the turn-on fields declined to 7.50 V μm-1, 6.38 V μm-1, and 7.28 V μm-1, and current densities increased to 21.0 μA cm-2, 42.6 μA cm-2, and 13.2 μA cm-2, respectively. Density functional theory (DFT) calculations revealed that N doping could bring about additional charge and then cause charge aggregation around the N atom. At the same time, it also lowered the work function, which further enhanced the field emission. The doping effect was determined by the content of the pyrrolic-type N and pyridinic-type N. Pyridinic-type N is more favourable for field emission because of its smaller work function, which is in good agreement with the experimental results. This study would be of great benefit to the understanding of N doping modulation for superior field emission properties.

Accurate Prediction of Adiabatic Ionization Energies for PAHs and Substituted Analogues

The accurate calculation of adiabatic ionization energies (AIEs) for polycyclic aromatic hydrocarbons (PAHs) and their substituted analogues is essential for understanding their electronic properties, reactivity, stability, and environmental/health implications. This study demonstrates that the M06-2X density functional theory method excels in predicting the AIEs of polycyclic aromatic hydrocarbons and related molecules, rivaling the (R)CCSD(T)-F12 method in terms of accuracy. These findings suggest that M06-2X, coupled with an appropriate basis set, represents a reliable and efficient method for studying polycyclic aromatic hydrocarbons and related molecules, aligning well with the experimental techniques. The set of molecules examined in this work encompasses numerous polycyclic aromatic hydrocarbons from m/z 67 up to m/z 1,176, containing heteroatoms that may be found in biofuels or nucleic acid bases, making the results highly relevant for photoionization experiments and mass spectrometry. For coronene-derivative molecular species with the C6n2H6n chemical formula, we give an expression to predict their AIEs (AIE (n) = 4.359 + 4.8743n-0.72057, in eV) upon extending the π-aromatic cloud until reaching graphene. In the long term, the application of this method is anticipated to contribute to a deeper understanding of the relationships between PAHs and graphene, guiding research in materials science and electronic applications and serving as a valuable tool for validating theoretical calculation methods.

Integration of Inkjet Printed Graphene as a Hole Transport Layer in Organic Solar Cells

This work demonstrates the green production of a graphene ink for inkjet printing and its use as a hole transport layer (HTL) in an organic solar cell. Graphene as an HTL improves the selective hole extraction at the anode and prevents charge recombination at the electronic interface and metal diffusion into the photoactive layer. Graphite was exfoliated in water, concentrated by iterative centrifugation, and characterized by Raman. The concentrated graphene ink was incorporated into inverted organic solar cells by inkjet printing on the active polymer in an ambient atmosphere. Argon plasma was used to enhance wetting of the polymer with the graphene ink during printing. The argon plasma treatment of the active polymer P3HT:PCBM was investigated by XPS, AFM and contact angle measurements. Efficiency and lifetime studies undertaken show that the device with graphene as HTL is fully functional and has good potential for an inkjet printable and flexible alternative to PEDOT:PSS.

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

With the explosion of data-centric applications, new in-memory computing technologies, based on nonvolatile memory devices, have become competitive due to their merged logic-memory functionalities. Herein, employing first-principles quantum transport simulation, we theoretically investigate for the first time the electronic and contact properties of two types of monolayer (ML)-MoS2 ferroelectric field-effect transistors (FeFETs) integrated with ferroelectric BiAlO3(0001) (BAO(0001)) polar surfaces. Our study finds that the interfacial properties of the investigated partial FeFET devices are highly tunable by switching the electric polarization of the ferroelectric BAO(0001) dielectric. Specifically, the transition from quasi-Ohmic to the Schottky contact, as well as opposite contact polarity of respective n-type and p-type Schottky contact under two polarization states can be obtained, suggesting their superior performance metrics in terms of nonvolatile information storage. In addition, due to the feature of (quasi-)Ohmic contact in some polarization states, the explored FeFET devices, even when operating in the regular field-effect transistor (FET) mode, can be extremely significant in realizing a desirable low threshold voltage and interfacial contact resistance. In conjunction with the formed van der Waals (vdW) interfaces in ML-MoS2/ferroelectric systems with an interlayer, the proposed FeFETs are expected to provide excellent device performance with regard to cycling endurance and memory density.

Direct Visualization of the Charge Transfer in a Graphene/α-RuCl3 Heterostructure via Angle-Resolved Photoemission Spectroscopy

We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.

Realizing On/Off Ratios over 104 for Sub-2 nm Vertical Transistors

Vertical transistors hold promise for the development of ultrascaled transistors. However, their on/off ratios are limited by a strong source-drain tunneling current in the off state, particularly for vertical devices with a sub-5 nm channel length. Here, we report an approach for suppressing the off-state tunneling current by designing the barrier height via a van der Waals metal contact. Via lamination of the Pt electrode on a MoS2 vertical transistor, a high Schottky barrier is observed due to their large work function difference, thus suppressing direct tunneling currents. Meanwhile, this "low-energy" lamination process ensures an optimized metal/MoS2 interface with minimized interface states and defects. Together, the highest on/off ratios of 5 × 105 and 104 are realized in vertical transistors with 5 and 2 nm channel lengths, respectively. Our work not only pushes the on/off ratio limit of vertical transistors but also provides a general rule for reducing short-channel effects in ultrascaled devices.

ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors

Metal contacts to MoS2 field-effect transistors (FETs) play a determinant role in the device electrical characteristics and need to be chosen carefully. Because of the Schottky barrier (SB) and the Fermi level pinning (FLP) effects that occur at the contact/MoS2 interface, MoS2 FETs often suffer from high contact resistance (Rc). One way to overcome this issue is to replace the conventional 3D bulk metal contacts with 2D counterparts. Herein, we investigate 2D metallic TiSx (x ∼ 1.8) as top contacts for MoS2 FETs. We employ atomic layer deposition (ALD) for the synthesis of both the MoS2 channels as well as the TiSx contacts and assess the electrical performance of the fabricated devices. Various thicknesses of TiSx are grown on MoS2, and the resultant devices are electrically compared to the ones with the conventional Ti metal contacts. Our findings show that the replacement of 5 nm Ti bulk contacts with only ∼1.2 nm of 2D TiSx is beneficial in improving the overall device metrics. With such ultrathin TiSx contacts, the ON-state current (ION) triples and increases to ∼35 μA μm-1. Rc also reduces by a factor of four and reaches ∼5 MΩ μm. Such performance enhancements were observed despite the SB formed at the TiSx/MoS2 interface is believed to be higher than the SB formed at the Ti/MoS2 interface. These device metric improvements could therefore be mainly associated with an increased level of electrostatic doping in MoS2, as a result of using 2D TiSx for contacting the 2D MoS2. Our findings are also well supported by TCAD device simulations.

Tailoring the work function of graphene via defects, nitrogen-doping and hydrogenation: A first principles study

The effect of defects, nitrogen doping, and hydrogen saturation on the work function of graphene is investigated via first principle calculations. Whilst Stone-Wales defects have little effect, single and double vacancy defects increase the work function by decreasing charge density in theπ-electron system. Substitutional nitrogen doping in defect-free graphene significantly decreases the work function, because the nitrogen atoms donate electrons to theπ-electron system. In the presence of defects, these competing effects mean that higher nitrogen content is required to achieve similar reduction in work function as for crystalline graphene. Doping with pyridinic nitrogen atoms at vacancies slightly increases the work function, since pyridinic nitrogen does not contribute electrons to theπ-electron system. Meanwhile, hydrogen saturation of the pyridinic nitrogen atoms significantly reduces the work function, due to a shift from pyridinic to graphitic-type behavior. These findings clearly explain some of the experimental work functions obtained for carbon and nitrogen-doped carbon materials in the literature, and has implications in applications such as photocatalysis, photovoltaics, electrochemistry, and electron field emission.

Unique modulation effects on the performance of graphene-based ammonia sensors via ultrathin bimetallic Au/Pt layers and gate voltages

Gas sensors with superior comprehensive performance at room temperature (RT) are always desired. Here, Au, Pt and Pt/Au-decorated graphene-based field effect transistor (FET) sensors for ammonia (denoted as Au/Gr, Pt/Gr and Pt/Au/Gr, respectively) are designed and fabricated. All these devices exhibited far better RT sensing performances for ammonia compared with graphene devices. Applying positive back gate voltages can further enhance their RT performance in which the Pt/Au/Gr devices show superior RT comprehensive performance such as a response of -16.2%, a recovery time of 4.6 min, and especially a much reduced response time of 54 s for 200 ppm NH₃ with a detection limit of 103 ppb at a gate voltage of +60 V, and can be potentially tailored for further performance improvement by controlling the ratios of Pt and Au. The dependences of their performance on the gate voltage except for the response time could be reasonably explained by theoretical calculations in terms of the changes of the total density of states near the Fermi level, adsorption energies, transferred charges and adsorption distances. This study provides an effective solution for performance improvement of FET-based sensors via synergistic effects of ultrathin-layer multiple-metallic decoration and gate voltage, which would promote the exploration of novel sensors.